@article{cullen_williams_zadrozny_otstot_solomon_sills_hong_2011, title={H-ras Consensus Sequence and Mutations in Primary Hepatocellular Carcinomas of Lemurs and Lorises}, volume={48}, ISSN={["0300-9858"]}, DOI={10.1177/0300985810388526}, abstractNote={The authors have determined a consensus sequence for exons 1 and 2 of H-ras from captive lemurs and lorises and evaluated samples of nonneoplastic liver and hepatocellular carcinomas (HCC) from affected animals for mutations in these exons. Frozen liver samples were collected from 20 animals representing 9 different species with a sex distribution of 10 males and 10 females. A total of 26 liver samples, including 11 normal livers, 9 HCC, and 6 samples from nonneoplastic regions of liver from animals with HCC, were evaluated. This is the first report of the consensus sequence for exons 1 and 2 of H-ras in prosimians, and the authors have determined that it is identical to that of human H-ras and differs only slightly from the chimpanzee sequence. Point mutations were identified in 6 of the 9 HCC samples examined with codons 7, 22, 32, 56, 61, 84, and 96 affected. Two carcinomas had double mutations, and one tumor had triple mutations. One HCC had a mutation in codon 61, which is identical to a recognized affected codon for an H-ras “hot spot” in rodent neoplasia that has also been reported in human tumors. Although not statistically different, metastasis occurred in 5 of 6 HCC with H-ras mutation and only 1 of 3 HCC without mutations. There were 4 silent mutations that did not contain changes in the encoded amino acids, 2 of which were found in nonneoplastic regions of tumor-bearing liver.}, number={4}, journal={VETERINARY PATHOLOGY}, author={Cullen, J. M. and Williams, C. and Zadrozny, L. and Otstot, J. T. and Solomon, G. G. and Sills, R. C. and Hong, H-H. L.}, year={2011}, month={Jul}, pages={868–874} }
 @misc{croswell_reisman_simpson_temple_williams_2001, title={Methods of raising reflow temperature of glass alloys by thermal treatment in steam, and microelectronic structures formed thereby}, volume={6,271,150}, number={2001 Aug. 7}, publisher={Washington, DC: U.S. Patent and Trademark Office}, author={Croswell, R. T. and Reisman, A. and Simpson, D. L. and Temple, D. and Williams, C. K.}, year={2001} }
 @article{simpson_croswell_reisman_williams_temple_2000, title={Deposition and characterization of undoped and boron and phosphorus doped (SixGe1-xO2) glass films}, volume={147}, ISSN={["0013-4651"]}, DOI={10.1149/1.1393394}, abstractNote={Glass films of undoped and boron and phosphorus doped GeO 2 -SiO 2 glass films were prepared by plasma enhanced chemical vapor deposition using germane, silane, phosphine, diborane, and oxygen as precursor gas sources with argon as a carrier gas. Film synthesis was carried out at 200°C using a dual-coil, inductively coupled plasma system. The presence of silane was not necessary to catalyze the decomposition of germane in the plasma environment as required in a strictly thermal environment. The index of refraction of undoped films changes linearly with SiO 2 composition, and deposition rate was nearly constant across all film compositions. Oxide film composition was determined using energy dispersive X-ray spectroscopy and Auger energy spectroscopy. For undoped films, solid-phase SiO 2 composition varied linearly with silane gas-phase composition. For doped compositions, phosphorus mole fraction in the solid phase was up to a factor of two greater than that present in the gas phase. In contrast to this, the quantity of boron incorporated into the solid phase was a factor of five to six less than present in the gas phase. When both dopants were present in the gas phase, the amount of each incorporated into the solid phase was similar to that in the gas phase.}, number={4}, journal={JOURNAL OF THE ELECTROCHEMICAL SOCIETY}, author={Simpson, DL and Croswell, RT and Reisman, A and Williams, CK and Temple, D}, year={2000}, month={Apr}, pages={1560–1567} }
 @article{croswell_reisman_simpson_temple_williams_2000, title={Planarization processes and applications III. As-deposited and annealed film properties}, volume={147}, ISSN={["1945-7111"]}, DOI={10.1149/1.1393387}, abstractNote={Although germanosilicates with and without boron and phosphorus dopants have been shown to planarize over steps at temperatures below 800°C, other properties of the films, such as water solubility, electrical conductivity, and mechanical stress, are also concerns with these materials. This study examines these film properties for undoped and boron- and/or phosphorus-doped germanosilicate glasses deposited by plasma-enhanced chemical vapor deposition. Water solubility resistance was improved for most film compositions after anneals in argon, steam, forming gas, or two-step anneals in argon and steam or argon and forming gas. Electrical leakage and breakdown behavior was also found to improve in steam anneals and even further in two-step argon-steam anneals but leakage increased following forming gas anneals. Mechanical stress was found to generally increase in magnitude following argon anneals, but stress levels were reduced again to near as-deposited values following a subsequent steam anneal. For the greatest improvement in properties, a two-step anneal, first in argon and subsequently in steam, is recommended.}, number={4}, journal={JOURNAL OF THE ELECTROCHEMICAL SOCIETY}, author={Croswell, RT and Reisman, A and Simpson, DL and Temple, D and Williams, CK}, year={2000}, month={Apr}, pages={1513–1524} }
 @article{croswell_reisman_simpson_temple_williams_1999, title={Differential thermal analysis of glass mixtures containing SiO2, GeO2, B2O3, and P2O5}, volume={146}, ISSN={["0013-4651"]}, DOI={10.1149/1.1392676}, abstractNote={The glassy phases of SiO 2 , GeO 2 , B 2 O 3 , and P 2 O 5 as well as selected pseudo-binary, pseudo-ternary, and pseudo-quaternary compositions of these compounds have been examined for glass transitions by differential thermal analysis (DTA) in the context of reflow of doped germanosilicate glasses. SiO 2 does not exhibit a glass transition to temperatures above I 135°C. GeO 2 appears to exhibit a glass transition around 578°C, while B 2 O 3 appears to exhibit a glass transition in the range of 257-268°C. Although the glass transition temperature of P 2 O 5 could not be determined, the transition and melting behavior of the H, O, and O' phases have been reevaluated. Moreover, a new mechanism for conversion from H phase to O phase is presented. Namely, the melting of H H phase followed by the spontaneous recrystallization of the resulting liquid to form the O phase was observed by DTA. Germanosilicate mixtures exhibited no glass transition, but the germanoborates' glass transition temperatures increased linearly with increasing GeO 2 content. Examination of germanoborosilicates indicated that the addition of any germanosilicate composition to B 2 O 3 causes a linear increase in glass transition temperature with total germanosilicate mole fraction, independent of the GeO 2 /SiO 2 mole ratio. Pseudo-binary combinations of P 2 O 5 -B 2 O 3 showed no thermal anomalies on heating or cooling cycles following an initial thermal cycle. However, pseudo-binary combinations of P 2 O 5 -GeO exhibited exotherms on cooling following initial heating cycles, which may indicate the occurrence of crystallizations that might interfere with reflow phenomena Pseudo-quaternary combinations exhibited no thermal anomalies on heating or cooling.}, number={12}, journal={JOURNAL OF THE ELECTROCHEMICAL SOCIETY}, author={Croswell, RT and Reisman, A and Simpson, DL and Temple, D and Williams, CK}, year={1999}, month={Dec}, pages={4569–4579} }
 @article{simpson_croswell_reisman_temple_williams_1999, title={Planarization processes and applications - I. Undoped GeO2-SiO2 glasses}, volume={146}, ISSN={["0013-4651"]}, DOI={10.1149/1.1392565}, abstractNote={The reflow behavior of undoped glass films deposited by plasma enhanced chemical vapor deposition using germane, silane. and oxygen has been studied in several annealing ambient atmospheres. Such films offer the potential for both trench etchrefill and interlevel dielectric applications. Film synthesis was carried out at 200°C using a dual coil inductively coupled plasma system. Oxide film composition was determined using energy dispersive X‐ray spectroscopy and Auger energy spectroscopy. Cross‐sectional scanning electron microscopy has been employed to study the flow behavior of glass films of varying compositions over silicon trenches. Reflow was studied over the temperature range from 600 to 1050°C. The lowest temperature at which complete planarization was observed was 750 and 850°C in steam and inert gas ambient atmospheres, respectively, for films containing approximately 85 mol % . Surprisingly, it was discovered that the steam anneals caused a decrease in the Ge composition of as‐deposited germanosilicate glasses. This offers the potential for establishing a reflow hierarchy, which may have application in the planarization of interlevel dielectrics for ultralarge scale integrated circuits. © 1999 The Electrochemical Society. All rights reserved.}, number={10}, journal={JOURNAL OF THE ELECTROCHEMICAL SOCIETY}, author={Simpson, DL and Croswell, RT and Reisman, A and Temple, D and Williams, CK}, year={1999}, month={Oct}, pages={3860–3871} }
 @article{simpson_croswell_reisman_temple_williams_1999, title={Planarization processes and applications - II. B2O3/P2O5 doped GeO2-SiO2 classes}, volume={146}, ISSN={["0013-4651"]}, DOI={10.1149/1.1392566}, abstractNote={Plasma enhanced chemical vapor deposition of boron and phosphorus doped mixed GeO 2 -SiO 2 glass films in a horizontal tube reactor using germane (GeH 4 ), silane (SiH 4 ), diborane (B 2 H 6 ), phosphine (PH 3 ), and oxygen (O 2 ) has been studied. The glass films offer the potential for both trench refilling and interlevel dielectric applications. Film synthesis was carried out at 200°C using a dual coil inductively coupled plasma system. Oxide film composition was determined using energy dispersive X-ray spectroscopy and Auger energy spectroscopy. Cross-sectional scanning electron microscopy was employed for studing the compositional dependency of the reflow behavior of the mixed GeO 2 -SiO 2 , P 2 O 5 -GeO 2 -SiO 2 , B 2 O 3 -GeO 2 -SiO 2 , and P 2 O 5 -B 2 O 3 -GeO 2 -SiO 2 glass films over silicon trenches under various ambient atmospheres. Reflow experiments were performed at temperatures ranging from 550 to 800°C in various gas ambient atmospheres. As result of the work, a low temperature (∼600°C) reflow process was developed resulting in fully planar dielectric films. This process may have application for planarization of interlevel dielectrics for ultralarge scale integrated circuits.}, number={10}, journal={JOURNAL OF THE ELECTROCHEMICAL SOCIETY}, author={Simpson, DL and Croswell, RT and Reisman, A and Temple, D and Williams, CK}, year={1999}, month={Oct}, pages={3872–3885} }
 @article{kim_williams_reisman_1998, title={Low-field bulk defect generation during uniform carrier injection into the gate insulator of insulated gate field effect transistors at various temperatures}, volume={27}, ISSN={["0361-5235"]}, DOI={10.1007/s11664-998-0117-0}, number={7}, journal={JOURNAL OF ELECTRONIC MATERIALS}, author={Kim, HS and Williams, CK and Reisman, A}, year={1998}, month={Jul}, pages={908–914} }
 @article{kim_williams_reisman_1997, title={Charge centroid and origin of generated and intrinsic bulk defects at 293 and 100 K in insulated gate field effect transistors}, volume={81}, ISSN={["0021-8979"]}, DOI={10.1063/1.364087}, abstractNote={Intrinsic and generated bulk defects in the gate insulator of silicon insulated gate field effect transistors were examined using a continuous forward-bias pulsed injection technique to inject up to 1017 e/cm2 at 293 and 100 K, for insulator thicknesses ranging between 5.4 and 50.5 nm. The amount of trapping observed at 100 K was about 30 times greater than that at 293 K. The additional trapping at the reduced temperature was determined to come from two sources. One is trapping by existing shallow bulk defects, and the other is an increase in the density of generated bulk defects. The defect generation process is thought to be related to the neutral hole trap becoming unstable during injection, acting as an electron trap. This instability appears to be enhanced as the temperature is reduced to 100 K by a “freeze out’’ effect, or by higher energy carriers that result from a reduction in the thermal scattering. The defect generation rate follows a power law, much like a chemical rate equation, i.e., the rate of defect generation is dependent on the injection current density, much like a chemical reaction is dependent on pressure of the reactive species. The charge centroid of the generated defects, measured from the substrate/oxide interface, was determined at both temperatures and the centroid of the shallow electron traps was determined at 100 K. These were found to be in the range of 6–8 nm at 100 K and 10–16 nm at 293 K. Also, a defect free, or tunneling, region of 2–4 nm extent was determined to exist at each interface. This implies that when the oxide thickness decreases to about 4–8 nm, no threshold voltage shift should result from carrier injection at room, or low temperature, and in fact this behavior was observed in these devices (at least up to 1017 e/cm2 injected). It was found that the shallow traps can be rapidly depopulated by subjecting the devices to ordinary white light during normal device use, pointing to a possible method to improve device reliability at 100 K.}, number={3}, journal={JOURNAL OF APPLIED PHYSICS}, author={Kim, HS and Williams, CK and Reisman, A}, year={1997}, month={Feb}, pages={1566–1574} }
 @article{kim_reisman_williams_1997, title={Low-field trap generation dependence on the injection current density in gate insulators - How valid are accelerated hot electron measurements?}, volume={144}, ISSN={["0013-4651"]}, DOI={10.1149/1.1837847}, abstractNote={Continuous low gate insulator field (1 MV/cm) electron injection in insulated gate field effect transistors using a pulsed injection technique (PIT) was conducted in the dose range 10 -3 to 10 17 e/cm 2 over the range of current densities from 1.5 x 10 -7 to 3.4 x 10 -5 A/cm 2 . PIT enables independent control of insulator fields and injection current densities, while not causing optically induced shallow trap depopulation. As is generally the case, the threshold voltage shift, AV D varies monotonically with dose, and can be modeled using a defect generation power law requiring fewer adjustable parameters than is necessary using a first order trapping model. It was also found that for a given dose the injection current density has a profound effect on the observed magnitude of trap generation. Previously, the total dose and insulator field were thought to be the only determining factors in trap generation. Based on these results, it appears that when the intrinsic defect concentration(s) is to be determined, a very low current density (injection rate) should be used to minimize trap generation effects which would confuse the issue. It is reported also for the first time that the expected in-use lifetime of the devices, calculated from the injection data, also exhibits a power law dependency on the injection current density. These results raise serious questions about the validity of aggressive injection techniques (such as avalanche injection and Fowler-Nordheim approaches), of the existence of ultrasmall cross section electron traps based on such methods, and of aggressive accelerated aging conclusions, based on the extrapolation of high injection current density data to end-of-life threshold voltage shifts.}, number={7}, journal={JOURNAL OF THE ELECTROCHEMICAL SOCIETY}, author={Kim, HS and Reisman, A and Williams, CK}, year={1997}, month={Jul}, pages={2517–2521} }