@article{wolfe_lucovsky_2000, title={Formation of nano-crystalline Si by thermal annealing of SiOx, SiCx and SiOyCx amorphous alloys: model systems for advanced device processing}, volume={266}, number={2000 May}, journal={Journal of Non-crystalline Solids}, author={Wolfe, D. M. and Lucovsky, G.}, year={2000}, pages={1009–1014} }
 @article{wolfe_hinds_wang_lucovsky_ward_xu_nemanich_maher_1999, title={Thermochemical stability of silicon-oxygen-carbon alloy thin films: A model system for chemical and structural relaxation at SiC-SiO2 interfaces}, volume={17}, ISSN={["0734-2101"]}, DOI={10.1116/1.581745}, abstractNote={Alloy thin films of hydrogenated silicon–oxygen–carbon (Si,C)Ox x<2, were deposited and analyzed in terms of changes in structure and bonding as a function of rapid thermal annealing between 600 and 1100 °C using a combination of Fourier transform infrared spectroscopy, Raman scattering and high-resolution transmission electron microscopy. Results showed that three structural/chemical transformations took place upon annealing. The initial reaction (600–800 °C) involved the loss of hydrogen bonded to both silicon and carbon. At intermediate temperatures (900–1000 °C) a Si–O–C type bond was observed to form, and subsequently disappear after annealing to 1050 °C. The formation of ordered amorphous-SiC regions, nanocrystalline-Si regions, and stoichiometric, thermally relaxed SiO2 accompanied the disappearance of the Si–O–C bond at the 1050 °C annealing temperature. Using this alloy as a model system, important information is obtained for optimized processing of SiC–SiO2 interfaces for device applications.}, number={4}, journal={JOURNAL OF VACUUM SCIENCE & TECHNOLOGY A-VACUUM SURFACES AND FILMS}, author={Wolfe, DM and Hinds, BJ and Wang, F and Lucovsky, G and Ward, BL and Xu, M and Nemanich, RJ and Maher, DM}, year={1999}, pages={2170–2177} }
 @article{hinds_wang_wolfe_hinkle_lucovsky_1998, title={Investigation of postoxidation thermal treatments of Si/SiO2 interface in relationship to the kinetics of amorphous Si suboxide decomposition}, volume={16}, number={4}, journal={Journal of Vacuum Science & Technology. B, Microelectronics and Nanometer Structures}, author={Hinds, B. J. and Wang, F. and Wolfe, D. M. and Hinkle, C. L. and Lucovsky, G.}, year={1998}, pages={2171–2176} }
 @article{wolfe_wang_habermehl_lucovsky_1998, title={Low-temperature (<450 degrees C), plasma-assisted deposition of poly-Si thin films on SiO2 and glass through interface engineering (vol 15, pg 1035, 1997)}, volume={16}, number={1}, journal={Journal of Vacuum Science & Technology. A, Vacuum, Surfaces, and Films}, author={Wolfe, D. M. and Wang, F. and Habermehl, S. and Lucovsky, G.}, year={1998}, pages={207} }
 @article{hinds_wang_wolfe_hinkle_lucovsky_1998, title={Study of SiOx decomposition kinetics and formation of Si nanocrystals in an SiOx matrix}, volume={230 (part A)}, number={1998 May}, journal={Journal of Non-crystalline Solids}, author={Hinds, B. J. and Wang, F. and Wolfe, D. M. and Hinkle, C. L. and Lucovsky, G.}, year={1998}, pages={507–512} }
 @article{wolfe_wang_lucovsky_1997, title={Low-temperature (<450 degrees C), plasma-assisted deposition of poly-Si thin films on SiO2 and glass through interface engineering}, volume={15}, ISSN={["0734-2101"]}, DOI={10.1116/1.580426}, abstractNote={A low-temperature, two-stage process that employs interface engineering is investigated for deposition of poly-Si thin films on SiO2 and glass. In this two-stage process, film growth is separated into two regimes: (i) interface formation and (ii) bulk film growth. Interface formation (stage 1) was optimized for remote plasma enhanced chemical-vapor deposition (PECVD) of ultra thin (<100 Å) μc-Si films on the oxide. This layer acts as a seed template, providing ordered growth sites for the next stage of film growth. Bulk Si film deposition (stage 2) was then initiated on the seed template using remote PECVD process conditions shown to produce low-temperature (<450 °C), epitaxial-Si films on crystalline silicon substrates, so as to drive a transition to larger grain growth off of the seed crystals. Results showed that the seed layer had a dramatic impact on bulk film crystallinity. Films deposited without a μc-Si seed layer were amorphous, whereas films deposited using a seed layer, in conjunction with the appropriate second stage conditions, were highly oriented (220) poly-Si.}, number={3}, journal={JOURNAL OF VACUUM SCIENCE & TECHNOLOGY A-VACUUM SURFACES AND FILMS}, author={Wolfe, DM and Wang, F and Lucovsky, G}, year={1997}, pages={1035–1040} }
 @article{golz_lucovsky_koh_wolfe_niimi_kurz_1997, title={Plasma-assisted formation of low defect density SiC-SiO2 interfaces}, volume={15}, number={4}, journal={Journal of Vacuum Science & Technology. B, Microelectronics and Nanometer Structures}, author={Golz, A. and Lucovsky, G. and Koh, K. and Wolfe, D. and Niimi, H. and Kurz, H.}, year={1997}, pages={1097–1104} }