Sang-Duk Yoo

Elimination of endpoint-discontinuity artifacts in the analysis of spectra in reciprocal space

Yoo, S. D., & Aspnes, D. E. (2001, June 15). Journal of Applied Physics, Vol. 89, pp. 8183–8192.

Dielectric function of epitaxial ZnSe films

Koo, M. S., Kim, T. J., Lee, M. S., Oh, M. S., Kim, Y. D., Yoo, S. D., … Jonker, B. T. (2000, November 20). Applied Physics Letters, Vol. 77, pp. 3364–3366.

Effect of Ar+ ion beam in the process of plasma surface modification of PET films

Hyun, J., Barletta, P., Koh, K., Yoo, S., Oh, J., Aspnes, D. E., & Cuomo, J. J. (2000, January 1). Journal of Applied Polymer Science, Vol. 77, pp. 1679–1683.

High-Resolution Spectroscopy with Reciprocal-Space Analysis: Application to Isotopically Pure Si

Yoo, S. D., Aspnes, D. E., Lastras-Martínez, L. F., Ruf, T., Konuma, M., & Cardona, M. (2000, July 1). Physica Status Solidi (b), Vol. 220, pp. 117–125.

In situ monitoring of MOVPE growth by combined spectroscopic ellipsometry and reflectance-difference spectroscopy

Ebert, M., Bell, K. A., Yoo, S. D., Flock, K., & Aspnes, D. E. (2000, March 1). Thin Solid Films, Vol. 364, pp. 22–27.

Optical characterization of wide bandgap semiconductors

Edwards, N. V., Bremser, M. D., Batchelor, A. D., Buyanova, I. A., Madsen, L. D., Yoo, S. D., … Monemar, B. (2000, March 1). Thin Solid Films, Vol. 364, pp. 98–106.

Optical properties of AlxGa1−xP (0⩽x⩽0.52) alloys

Choi, S. G., Kim, Y. D., Yoo, S. D., Aspnes, D. E., Woo, D. H., & Kim, S. H. (2000, February 1). Journal of Applied Physics, Vol. 87, pp. 1287–1290.

Real-time optical characterization of heteroepitaxy by organometallic chemical vapor deposition

Bell, K. A., Ebert, M., Yoo, S. D., Flock, K., & Aspnes, D. E. (2000, July 1). Journal of Vacuum Science & Technology A Vacuum Surfaces and Films, Vol. 18, pp. 1184–1189.

Real-time optical techniques and QMS to characterize growth in a modified commercial OMVPE reactor

Bell, K. A., Ebert, M., Yoo, S. D., Flock, K., & Aspnes, D. E. (2000, January 1). Journal of Electronic Materials, Vol. 29, pp. 106–111.

Dielectric function of Cd0.57Mg0.43Te alloy film studied by ellipsometry

Journal of the Korean Physical Society, 34(1999 June), S496–498.

High-Resolution Spectroscopy with Reciprocal-Space Analysis

Aspnes, D. E., & Yoo, S. D. (1999, September 1). Physica Status Solidi (b), Vol. 215, pp. 715–723.

Analysis of optical spectra by Fourier methods

Yoo, S. D., Edwards, N. V., & Aspnes, D. E. (1998, February 1). Thin Solid Films, Vol. 313, pp. 143–148.

Optical characterization of GaAs/AlAs short period superlattices

Woo, D. H., Han, I. K., Choi, W. J., Lee, S., Kim, H. J., Lee, J. I., … Woo, J. C. (1998, August 1). Microelectronic Engineering, Vol. 43-4, pp. 265–270.

Spectroscopic ellipsometry and low-temperature reflectance: complementary analysis of GaN thin films

Edwards, N. V., Yoo, S. D., Bremser, M. D., Horton, M. N., Perkins, N. R., Weeks, T. W., … Aspnes, D. E. (1998, February 1). Thin Solid Films, Vol. 313, pp. 187–192.

Trends in residual stress for GaN/AlN/6H–SiC heterostructures

Edwards, N. V., Bremser, M. D., Davis, R. F., Batchelor, A. D., Yoo, S. D., Karan, C. F., & Aspnes, D. E. (1998, November 9). Applied Physics Letters, Vol. 73, pp. 2808–2810.

Above bandgap dielectric function of epitaxial ZnSe layers

Journal of the Korean Physical Society, 31(4), L553–555.

Ellipsometric studies of Cd1−xMgxTe (0⩽x⩽0.5) alloys

Choi, S. G., Kim, Y. D., Yoo, S., Duk, A., Miotkowski, D. E., I., & Ramdas, A. K. (1997, July 14). Applied Physics Letters, Vol. 71, pp. 249–251.

Spectral analysis of above-, below-, and near-bandedge phenomena in GaN thin films

Edwards, N. V., Yoo, S. D., Bremser, M. D., Zheleva, T., Horton, M. N., Perkins, N. R., … Aspnes, D. E. (1997, December 1). Materials Science and Engineering B, Vol. 50, pp. 134–141.

Spectroscopic ellipsometric characterization of undoped ZnTe films grown on GaAs

Kim, Y. D., Choi, S. G., Klein, M. V., Yoo, S. D., Aspnes, D. E., Xin, S. H., & Furdyna, J. K. (1997, February 3). Applied Physics Letters, Vol. 70, pp. 610–612.

Spectroscopic ellipsometric study of Zn(1-x)Mn(x)Te films grown on GaAs

Journal of the Korean Physical Society, 31(1), 202–205.

Spectroscopic ellipsometry study of GaAs/AlAs superlattices and Al(0.5)Ga(0.5)As alloy

Journal of the Korean Physical Society, 30(suppl.), 108–112.

Variation of GaN valence bands with biaxial stress and quantification of residual stress

Edwards, N. V., Yoo, S. D., Bremser, M. D., Weeks, T. W., Nam, O. H., Davis, R. F., … Aspnes, D. E. (1997, April 14). Applied Physics Letters, Vol. 70, p. 2001.

Variation of GaN Valence Bands with Biaxial Stress: Quantification of Residual Stress and Impact on Fundamental Band Parameters

Edwards, N. V., Yoo, S. D., Bremser, M. D., Horton, M. N., Perkins, N. R., Weeks, T. W., … Aspnes, D. E. (1996, January 1). MRS Proceedings, pp. 781–786.