Sang-Duk Yoo

Elimination of endpoint-discontinuity artifacts in the analysis of spectra in reciprocal space

JOURNAL OF APPLIED PHYSICS, 89(12), 8183–8192.

Dielectric function of epitaxial ZnSe films

APPLIED PHYSICS LETTERS, 77(21), 3364–3366.

Effect of Ar+ ion beam in the process of plasma surface modification of PET films

JOURNAL OF APPLIED POLYMER SCIENCE, 77(8), 1679–1683.

High-resolution spectroscopy with reciprocal-space analysis: Application to isotopically pure Si

Yoo, S. D., Aspnes, D. E., Lastras-Martinez, L. F., Ruf, T., Konuma, M., & Cardona, M. (2000, July). PHYSICA STATUS SOLIDI B-BASIC SOLID STATE PHYSICS, Vol. 220, pp. 117–125.

In situ monitoring of MOVPE growth by combined spectroscopic ellipsometry and reflectance-difference spectroscopy

Ebert, M., Bell, K. A., Yoo, S. D., Flock, K., & Aspnes, D. E. (2000, March 27). THIN SOLID FILMS, Vol. 364, pp. 22–27.

Optical characterization of wide bandgap semiconductors

Edwards, N. V., Bremser, M. D., Batchelor, A. D., Buyanova, I. A., Madsen, L. D., Yoo, S. D., … Monemar, B. (2000, March 27). THIN SOLID FILMS, Vol. 364, pp. 98–106.

Optical properties of AlxGa1-xP (0 <= x <= 0.52) alloys

JOURNAL OF APPLIED PHYSICS, 87(3), 1287–1290.

Real-time optical characterization of heteroepitaxy by organometallic chemical vapor deposition

JOURNAL OF VACUUM SCIENCE & TECHNOLOGY A, Vol. 18, pp. 1184–1189.

Real-time optical techniques and QMS to characterize growth in a modified commercial OMVPE reactor

Bell, K. A., Ebert, M., Yoo, S. D., Flock, K., & Aspnes, D. E. (2000, January). JOURNAL OF ELECTRONIC MATERIALS, Vol. 29, pp. 106–111.

Dielectric function of Cd0.57Mg0.43Te alloy film studied by ellipsometry

Journal of the Korean Physical Society, 34(1999 June), S496–498.

High-resolution spectroscopy with reciprocal-space analysis

Aspnes, D. E., & Yoo, S. D. (1999, September). PHYSICA STATUS SOLIDI B-BASIC RESEARCH, Vol. 215, pp. 715–723.

Analysis of optical spectra by Fourier methods

Yoo, S. D., Edwards, N. V., & Aspnes, D. E. (1998, February). THIN SOLID FILMS, Vol. 313, pp. 143–148.

Optical characterization of GaAs/AlAs short period superlattices

Woo, D. H., Han, I. K., Choi, W. J., Lee, S., Kim, H. J., Lee, J. I., … Woo, J. C. (1998, August). MICROELECTRONIC ENGINEERING, Vol. 43-4, pp. 265–270.

Spectroscopic ellipsometry and low-temperature reflectance: complementary analysis of GaN thin films

Edwards, N. V., Yoo, S. D., Bremser, M. D., Horton, M. N., Perkins, N. R., Weeks, T. W., … Aspnes, D. E. (1998, February). THIN SOLID FILMS, Vol. 313, pp. 187–192.

Trends in residual stress for GaN/AlN/6H-SiC heterostructures

APPLIED PHYSICS LETTERS, 73(19), 2808–2810.

Above bandgap dielectric function of epitaxial ZnSe layers

Journal of the Korean Physical Society, 31(4), L553–555.

Ellipsometric studies of Cd1-xMgxTe (0<=x<=0.5) alloys

APPLIED PHYSICS LETTERS, 71(2), 249–251.

Spectral analysis of above-, below-, and near-bandedge phenomena in GaN thin films

MATERIALS SCIENCE AND ENGINEERING B-SOLID STATE MATERIALS FOR ADVANCED TECHNOLOGY, 50(1-3), 134–141.

Spectroscopic ellipsometric characterization of undoped ZnTe films grown on GaAs

APPLIED PHYSICS LETTERS, 70(5), 610–612.

Spectroscopic ellipsometric study of Zn(1-x)Mn(x)Te films grown on GaAs

Journal of the Korean Physical Society, 31(1), 202–205.

Spectroscopic ellipsometry study of GaAs/AlAs superlattices and Al(0.5)Ga(0.5)As alloy

Journal of the Korean Physical Society, 30(suppl.), 108–112.

Variation of GaN valence bands with biaxial stress and quantification of residual stress

APPLIED PHYSICS LETTERS, 70(15), 2001–2003.

Variation of GaN valence bands with biaxial stress: quantification of residual stress and impact on fundamental band parameters

III-V nitrides: symposium held December 2-6, 1996, Boston, Massachusetts, U.S.A. (Materials Research Society symposia proceedings ; v. 449), 781–786.