Works (11)
Updated: August 16th, 2024 13:38
1999 journal article
Chemical vapor cleaning of 6H-SiC surfaces
JOURNAL OF THE ELECTROCHEMICAL SOCIETY, 146(9), 3448–3454.
UN Sustainable Development Goal Categories
7. Affordable and Clean Energy
(Web of Science)
Source: Web Of Science
Added: August 6, 2018
1998 journal article
Aluminum nitride-silicon carbide solid solutions grown by plasma-assisted, gas-source molecular beam epitaxy
JOURNAL OF MATERIALS RESEARCH, 13(7), 1816–1822.
Source: Web Of Science
Added: August 6, 2018
1998 article
Growth of highly (0001)-oriented aluminum nitride thin films with smooth surfaces on silicon carbide by gas-source molecular beam epitaxy
Jarrendahl, K., Smith, S. A., Zheleva, T., Kern, R. S., & Davis, R. F. (1998, March). VACUUM, Vol. 49, pp. 189–191.
Source: Web Of Science
Added: August 6, 2018
1998 journal article
Reaction kinetics of silicon carbide deposition by gas-source molecular-beam epitaxy
Journal of Crystal Growth, 183(4), 581–593.
Source: NC State University Libraries
Added: August 6, 2018
1997 journal article
Deposition and doping of silicon carbide by gas-source molecular beam epitaxy
APPLIED PHYSICS LETTERS, 71(10), 1356–1358.
UN Sustainable Development Goal Categories
7. Affordable and Clean Energy
(Web of Science)
Source: Web Of Science
Added: August 6, 2018
1997 journal article
Gas-source molecular beam epitaxy of III-V nitrides
JOURNAL OF CRYSTAL GROWTH, 178(1-2), 87–101.
author keywords: boron nitride; gallium nitride; aluminum nitride; molecular beam epitaxy
Source: Web Of Science
Added: August 6, 2018
1997 article
Growth and doping via gas-source molecular beam epitaxy of SiC and SiC/AlN heterostructures and their microstructural and electrical characterization
Kern, R. S., Jarrendahl, K., Tanaka, S., & Davis, R. F. (1997, August). DIAMOND AND RELATED MATERIALS, Vol. 6, pp. 1282–1288.
author keywords: silicon carbide; aluminum nitride; molecular beam epitaxy; kinetics
UN Sustainable Development Goal Categories
6. Clean Water and Sanitation
(OpenAlex)
7. Affordable and Clean Energy
(Web of Science)
Source: Web Of Science
Added: August 6, 2018
1997 article
Growth of AlN and GaN thin films via OMVPE and gas source MBE and their characterization
Davis, R. F., Weeks, T. W., Bremser, M. D., Tanaka, S., Kern, R. S., Sitar, Z., … Wang, C. (1997, February). SOLID-STATE ELECTRONICS, Vol. 41, pp. 129–134.
UN Sustainable Development Goal Categories
14. Life Below Water
(OpenAlex)
Source: Web Of Science
Added: August 6, 2018
1997 journal article
Homoepitaxial SiC growth by molecular beam epitaxy
Physica Status Solidi. B, Basic Solid State Physics, 202(1), 379–404.
Source: NC State University Libraries
Added: August 6, 2018
1997 journal article
Silicon carbide for high-temperature microelectronics: recent advances in material growth via gas source MBE and device research
Materials Science & Engineering. B, Solid-State Materials for Advanced Technology, 46(1-3), 240–247.
Source: NC State University Libraries
Added: August 6, 2018
1996 conference paper
In-plane optical anisotropies of Al(x)Ga(1-x)N films in their regions of transparency
III-V nitrides: symposium held December 2-6, 1996, Boston, Massachusetts, U.S.A. (Materials Research Society symposia proceedings ; v. 449), 835–840.
Sources: NC State University Libraries, NC State University Libraries
Added: August 6, 2018
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