Richard S. Kern

Works (11)

Updated: April 14th, 2025 08:04

1999 article

Chemical Vapor Cleaning of 6H‐SiC Surfaces

King, S. W., Kern, R. S., Benjamin, M. C., Barnak, J. P., Nemanich, R. J., & Davis, R. F. (1999, September 1). Journal of The Electrochemical Society.

By: S. King*, R. Kern*, M. Benjamin n, J. Barnak, R. Nemanich n & R. Davis*

topics (OpenAlex): Silicon Carbide Semiconductor Technologies; Semiconductor materials and devices; Advanced ceramic materials synthesis
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Source: Web Of Science
Added: August 6, 2018

1998 article

Aluminum nitride-silicon carbide solid solutions grown by plasma-assisted, gas-source molecular beam epitaxy

Kern, R. S., Rowland, L. B., Tanaka, S., & Davis, R. F. (1998, July 1). Journal of Materials Research/Pratt's Guide to Venture Capital Sources.

By: R. Kern n, L. Rowland n, S. Tanaka  n & R. Davis n

topics (OpenAlex): Silicon Carbide Semiconductor Technologies; GaN-based semiconductor devices and materials; Semiconductor materials and devices
Source: Web Of Science
Added: August 6, 2018

1998 article

Growth of highly (0001)-oriented aluminum nitride thin films with smooth surfaces on silicon carbide by gas-source molecular beam epitaxy

Järrendahl, K., Smith, S. A., Zheleva, T., Kern, R. S., & Davis, R. F. (1998, March 1). Vacuum.

By: K. Järrendahl n, S. Smith n, T. Zheleva n, R. Kern n & R. Davis n

topics (OpenAlex): GaN-based semiconductor devices and materials; Metal and Thin Film Mechanics; Acoustic Wave Resonator Technologies
Source: Web Of Science
Added: August 6, 2018

1998 journal article

Reaction kinetics of silicon carbide deposition by gas-source molecular-beam epitaxy

Journal of Crystal Growth, 183(4), 581–593.

By: R. Kern, S. Tanaka, L. Rowland & R. Davis

Source: NC State University Libraries
Added: August 6, 2018

1997 article

Deposition and doping of silicon carbide by gas-source molecular beam epitaxy

Kern, R. S., & Davis, R. F. (1997, September 8). Applied Physics Letters.

By: R. Kern n & R. Davis n

topics (OpenAlex): Silicon Carbide Semiconductor Technologies; Thin-Film Transistor Technologies; Semiconductor materials and devices
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Source: Web Of Science
Added: August 6, 2018

1997 article

Gas-source molecular beam epitaxy of III–V nitrides

Davis, R. F., Paisley, M. J., Sitar, Z., Kester, D. J., Ailey, K. S., Linthicum, K., … Kern, R. S. (1997, June 1). Journal of Crystal Growth.

By: R. Davis n, M. Paisley  n, Z. Sitar n, D. Kester n, K. Ailey n, K. Linthicum n, L. Rowland n, S. Tanaka  n, R. Kern n

author keywords: boron nitride; gallium nitride; aluminum nitride; molecular beam epitaxy
topics (OpenAlex): GaN-based semiconductor devices and materials; Semiconductor materials and devices; Metal and Thin Film Mechanics
Source: Web Of Science
Added: August 6, 2018

1997 article

Growth and doping via gas-source molecular beam epitaxy of SiC and heterostructures and their microstructural and electrical characterization

Kern, R. S., Järrendahl, K., Tanaka, S., & Davis, R. F. (1997, August 1). Diamond and Related Materials.

By: R. Kern n, K. Järrendahl n, S. Tanaka  n & R. Davis n

author keywords: silicon carbide; aluminum nitride; molecular beam epitaxy; kinetics
topics (OpenAlex): Silicon Carbide Semiconductor Technologies; Semiconductor materials and devices; Copper Interconnects and Reliability
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6. Clean Water and Sanitation (OpenAlex)
Source: Web Of Science
Added: August 6, 2018

1997 article

Growth of AlN and GaN thin films via OMVPE and gas source MBE and their characterization

Davis, R. F., Weeks, T. W., Bremser, M. D., Tanaka, S., Kern, R. S., Sitar, Z., … Wang, C. (1997, February 1). Solid-State Electronics.

By: R. Davis n, T. Weeks n, M. Bremser n, S. Tanaka  n, R. Kern n, Z. Sitar n, K. Ailey n, W. Perry n, C. Wang n

topics (OpenAlex): GaN-based semiconductor devices and materials; Ga2O3 and related materials; ZnO doping and properties
UN Sustainable Development Goals Color Wheel
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14. Life Below Water (OpenAlex)
Source: Web Of Science
Added: August 6, 2018

1997 journal article

Homoepitaxial SiC growth by molecular beam epitaxy

Physica Status Solidi. B, Basic Solid State Physics, 202(1), 379–404.

By: R. Kern, K. Jarrendahl, S. Tanaka & R. Davis

Source: NC State University Libraries
Added: August 6, 2018

1997 journal article

Silicon carbide for high-temperature microelectronics: recent advances in material growth via gas source MBE and device research

Materials Science & Engineering. B, Solid-State Materials for Advanced Technology, 46(1-3), 240–247.

By: R. Kern & R. Davis

Source: NC State University Libraries
Added: August 6, 2018

1996 article

In-Plane Optical Anisotropies of AlxGa1-xN films in their Regions of Transparency

Rossow, U., Edwards, N. V., Bremser, M. D., Kern, R. S., Liu, H., Davis, R. F., & Aspnes, D. E. (1996, January 1). MRS Proceedings, pp. 835–840.

By: U. Rossow  n, N. Edwards n, M. Bremser n, R. Kern n, H. Liu*, R. Davis n, D. Aspnes n 

Ed(s):

topics (OpenAlex): GaN-based semiconductor devices and materials; Acoustic Wave Resonator Technologies; Ga2O3 and related materials
Sources: NC State University Libraries, NC State University Libraries
Added: August 6, 2018

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