Works (11)

1999 journal article

Chemical vapor cleaning of 6H-SiC surfaces

Journal of the Electrochemical Society, 146(9), 3448–3454.

By: S. King, R. Kern, M. Benjamin, J. Barnak, R. Nemanich & R. Davis

Source: NC State University Libraries
Added: August 6, 2018

1998 journal article

Aluminum nitride-silicon carbide solid solutions grown by plasma-assisted, gas-source molecular beam epitaxy

Journal of Materials Research, 13(7), 1816–1822.

By: R. Kern, L. Rowland, S. Tanaka & R. Davis

Source: NC State University Libraries
Added: August 6, 2018

1998 journal article

Growth of highly (0001)-oriented aluminum nitride thin films with smooth surfaces on silicon carbide by gas-source molecular beam epitaxy

Vacuum, 49(3), 189–191.

By: K. Jarrendahl, S. Smith, T. Zheleva, R. Kern & R. Davis

Source: NC State University Libraries
Added: August 6, 2018

1998 journal article

Reaction kinetics of silicon carbide deposition by gas-source molecular-beam epitaxy

Journal of Crystal Growth, 183(4), 581–593.

By: R. Kern, S. Tanaka, L. Rowland & R. Davis

Source: NC State University Libraries
Added: August 6, 2018

1997 journal article

Deposition and doping of silicon carbide by gas-source molecular beam epitaxy

Applied Physics Letters, 71(10), 1356–1358.

By: R. Kern & R. Davis

Source: NC State University Libraries
Added: August 6, 2018

1997 journal article

Gas-source molecular beam epitaxy of III-V nitrides

Journal of Crystal Growth, 178(1/2), 87–101.

By: R. Davis, M. Paisley, Z. Sitar, D. Kester, K. Ailey, K. Linthicum, L. Rowland, S. Tanaka, R. Kern

Source: NC State University Libraries
Added: August 6, 2018

1997 journal article

Growth and doping via gas-source molecular beam epitaxy of SiC and SiC/AlN heterostructures and their microstructural and electrical characterization

Diamond and Related Materials, 6(10), 1282–1288.

By: R. Kern, K. Jarrendahl, S. Tanaka & R. Davis

Source: NC State University Libraries
Added: August 6, 2018

1997 journal article

Growth of AlN and GaN thin films via OMVPE and gas source MBE and their characterization

Solid-State Electronics, 41(2), 129–134.

By: R. Davis

Source: NC State University Libraries
Added: August 6, 2018

1997 journal article

Homoepitaxial SiC growth by molecular beam epitaxy

Physica Status Solidi. B, Basic Solid State Physics, 202(1), 379–404.

By: R. Kern, K. Jarrendahl, S. Tanaka & R. Davis

Source: NC State University Libraries
Added: August 6, 2018

1997 conference paper

In-plane optical anisotropies of Al(x)Ga(1-x)N films in their regions of transparency

III-V nitrides: symposium held December 2-6, 1996, Boston, Massachusetts, U.S.A. (Materials Research Society symposia proceedings ; v. 449), 835–840.

By: U. Rossow, N. Edwards, M. Bremser, R. Kern, H. Liu, R. Davis, D. Aspnes

Source: NC State University Libraries
Added: August 6, 2018

1997 journal article

Silicon carbide for high-temperature microelectronics: recent advances in material growth via gas source MBE and device research

Materials Science & Engineering. B, Solid-State Materials for Advanced Technology, 46(1-3), 240–247.

By: R. Kern & R. Davis

Source: NC State University Libraries
Added: August 6, 2018