Works (11)

1999 journal article

Chemical vapor cleaning of 6H-SiC surfaces

JOURNAL OF THE ELECTROCHEMICAL SOCIETY, 146(9), 3448–3454.

By: S. King, R. Kern, M. Benjamin, J. Barnak*, R. Nemanich & R. Davis

Source: Web Of Science
Added: August 6, 2018

1998 journal article

Aluminum nitride-silicon carbide solid solutions grown by plasma-assisted, gas-source molecular beam epitaxy

JOURNAL OF MATERIALS RESEARCH, 13(7), 1816–1822.

By: R. Kern, L. Rowland n, S. Tanaka n & R. Davis

Source: Web Of Science
Added: August 6, 2018

1998 article

Growth of highly (0001)-oriented aluminum nitride thin films with smooth surfaces on silicon carbide by gas-source molecular beam epitaxy

Jarrendahl, K., Smith, S. A., Zheleva, T., Kern, R. S., & Davis, R. F. (1998, March). VACUUM, Vol. 49, pp. 189–191.

By: K. Jarrendahl, S. Smith n, T. Zheleva n, R. Kern & R. Davis

Source: Web Of Science
Added: August 6, 2018

1998 journal article

Reaction kinetics of silicon carbide deposition by gas-source molecular-beam epitaxy

Journal of Crystal Growth, 183(4), 581–593.

By: R. Kern, S. Tanaka, L. Rowland & R. Davis

Source: NC State University Libraries
Added: August 6, 2018

1997 journal article

Deposition and doping of silicon carbide by gas-source molecular beam epitaxy

APPLIED PHYSICS LETTERS, 71(10), 1356–1358.

By: R. Kern & R. Davis

Source: Web Of Science
Added: August 6, 2018

1997 journal article

Gas-source molecular beam epitaxy of III-V nitrides

JOURNAL OF CRYSTAL GROWTH, 178(1-2), 87–101.

By: R. Davis, M. Paisley n, Z. Sitar, D. Kester n, K. Ailey n, K. Linthicum, L. Rowland n, S. Tanaka n, R. Kern

author keywords: boron nitride; gallium nitride; aluminum nitride; molecular beam epitaxy
Source: Web Of Science
Added: August 6, 2018

1997 article

Growth and doping via gas-source molecular beam epitaxy of SiC and SiC/AlN heterostructures and their microstructural and electrical characterization

Kern, R. S., Jarrendahl, K., Tanaka, S., & Davis, R. F. (1997, August). DIAMOND AND RELATED MATERIALS, Vol. 6, pp. 1282–1288.

By: R. Kern, K. Jarrendahl, S. Tanaka n & R. Davis

author keywords: silicon carbide; aluminum nitride; molecular beam epitaxy; kinetics
Source: Web Of Science
Added: August 6, 2018

1997 article

Growth of AlN and GaN thin films via OMVPE and gas source MBE and their characterization

Davis, R. F., Weeks, T. W., Bremser, M. D., Tanaka, S., Kern, R. S., Sitar, Z., … Wang, C. (1997, February). SOLID-STATE ELECTRONICS, Vol. 41, pp. 129–134.

By: R. Davis, T. Weeks, M. Bremser, S. Tanaka n, R. Kern, Z. Sitar, K. Ailey n, W. Perry, C. Wang n

Source: Web Of Science
Added: August 6, 2018

1997 journal article

Homoepitaxial SiC growth by molecular beam epitaxy

Physica Status Solidi. B, Basic Solid State Physics, 202(1), 379–404.

By: R. Kern, K. Jarrendahl, S. Tanaka & R. Davis

Source: NC State University Libraries
Added: August 6, 2018

1997 conference paper

In-plane optical anisotropies of Al(x)Ga(1-x)N films in their regions of transparency

III-V nitrides: symposium held December 2-6, 1996, Boston, Massachusetts, U.S.A. (Materials Research Society symposia proceedings ; v. 449), 835–840.

By: U. Rossow n, N. Edwards, M. Bremser, R. Kern, H. Liu*, R. Davis, D. Aspnes

Sources: NC State University Libraries, ORCID
Added: August 6, 2018

1997 journal article

Silicon carbide for high-temperature microelectronics: recent advances in material growth via gas source MBE and device research

Materials Science & Engineering. B, Solid-State Materials for Advanced Technology, 46(1-3), 240–247.

By: R. Kern & R. Davis

Source: NC State University Libraries
Added: August 6, 2018