Richard S. Kern

King, S. W., Kern, R. S., Benjamin, M. C., Barnak, J. P., Nemanich, R. J., & Davis, R. F. (1999). Chemical vapor cleaning of 6H-SiC surfaces. JOURNAL OF THE ELECTROCHEMICAL SOCIETY, 146(9), 3448–3454. https://doi.org/10.1149/1.1392494

Kern, R. S., Rowland, L. B., Tanaka, S., & Davis, R. F. (1998). Aluminum nitride-silicon carbide solid solutions grown by plasma-assisted, gas-source molecular beam epitaxy. JOURNAL OF MATERIALS RESEARCH, 13(7), 1816–1822. https://doi.org/10.1557/JMR.1998.0257

Jarrendahl, K., Smith, S. A., Zheleva, T., Kern, R. S., & Davis, R. F. (1998, March). Growth of highly (0001)-oriented aluminum nitride thin films with smooth surfaces on silicon carbide by gas-source molecular beam epitaxy. VACUUM, Vol. 49, pp. 189–191. https://doi.org/10.1016/S0042-207X(97)00177-2

Kern, R. S., Tanaka, S., Rowland, L. B., & Davis, R. F. (1998). Reaction kinetics of silicon carbide deposition by gas-source molecular-beam epitaxy. Journal of Crystal Growth, 183(4), 581–593.

Kern, R. S., & Davis, R. F. (1997). Deposition and doping of silicon carbide by gas-source molecular beam epitaxy. APPLIED PHYSICS LETTERS, 71(10), 1356–1358. https://doi.org/10.1063/1.119892

Davis, R. F., Paisley, M. J., Sitar, Z., Kester, D. J., Ailey, K. S., Linthicum, K., … Kern, R. S. (1997). Gas-source molecular beam epitaxy of III-V nitrides. JOURNAL OF CRYSTAL GROWTH, 178(1-2), 87–101. https://doi.org/10.1016/S0022-0248(97)00077-8

Kern, R. S., Jarrendahl, K., Tanaka, S., & Davis, R. F. (1997, August). Growth and doping via gas-source molecular beam epitaxy of SiC and SiC/AlN heterostructures and their microstructural and electrical characterization. DIAMOND AND RELATED MATERIALS, Vol. 6, pp. 1282–1288. https://doi.org/10.1016/S0925-9635(97)00066-6

Davis, R. F., Weeks, T. W., Bremser, M. D., Tanaka, S., Kern, R. S., Sitar, Z., … Wang, C. (1997, February). Growth of AlN and GaN thin films via OMVPE and gas source MBE and their characterization. SOLID-STATE ELECTRONICS, Vol. 41, pp. 129–134. https://doi.org/10.1016/S0038-1101(96)00152-9

Kern, R. S., Jarrendahl, K., Tanaka, S., & Davis, R. F. (1997). Homoepitaxial SiC growth by molecular beam epitaxy. Physica Status Solidi. B, Basic Solid State Physics, 202(1), 379–404.

Rossow, U., Edwards, N. V., Bremser, M. D., Kern, R. S., Liu, H., Davis, R. F., & Aspnes, D. E. (1997). In-plane optical anisotropies of Al(x)Ga(1-x)N films in their regions of transparency. III-V nitrides: symposium held December 2-6, 1996, Boston, Massachusetts, U.S.A.  (Materials Research Society symposia proceedings ; v. 449), 835–840. https://doi.org/10.1557/proc-449-835

Kern, R. S., & Davis, R. F. (1997). Silicon carbide for high-temperature microelectronics: recent advances in material growth via gas source MBE and device research. Materials Science & Engineering. B, Solid-State Materials for Advanced Technology, 46(1-3), 240–247.