Richard S. Kern

King, S. W., Kern, R. S., Benjamin, M. C., Barnak, J. P., Nemanich, R. J., & Davis, R. F. (1999). Chemical vapor cleaning of 6H-SiC surfaces. JOURNAL OF THE ELECTROCHEMICAL SOCIETY, 146(9), 3448–3454. https://doi.org/10.1149/1.1392494

Kern, R. S., Rowland, L. B., Tanaka, S., & Davis, R. F. (1998). Aluminum nitride-silicon carbide solid solutions grown by plasma-assisted, gas-source molecular beam epitaxy. JOURNAL OF MATERIALS RESEARCH, 13(7), 1816–1822. https://doi.org/10.1557/JMR.1998.0257

Jarrendahl, K., Smith, S. A., Zheleva, T., Kern, R. S., & Davis, R. F. (1998, March). Growth of highly (0001)-oriented aluminum nitride thin films with smooth surfaces on silicon carbide by gas-source molecular beam epitaxy. VACUUM, Vol. 49, pp. 189–191. https://doi.org/10.1016/S0042-207X(97)00177-2

Kern, R. S., Tanaka, S., Rowland, L. B., & Davis, R. F. (1998). Reaction kinetics of silicon carbide deposition by gas-source molecular-beam epitaxy. Journal of Crystal Growth, 183(4), 581–593.

Kern, R. S., & Davis, R. F. (1997). Deposition and doping of silicon carbide by gas-source molecular beam epitaxy. APPLIED PHYSICS LETTERS, 71(10), 1356–1358. https://doi.org/10.1063/1.119892

Davis, R. F., Paisley, M. J., Sitar, Z., Kester, D. J., Ailey, K. S., Linthicum, K., … Kern, R. S. (1997). Gas-source molecular beam epitaxy of III-V nitrides. JOURNAL OF CRYSTAL GROWTH, 178(1-2), 87–101. https://doi.org/10.1016/S0022-0248(97)00077-8

Kern, R. S., Jarrendahl, K., Tanaka, S., & Davis, R. F. (1997, August). Growth and doping via gas-source molecular beam epitaxy of SiC and SiC/AlN heterostructures and their microstructural and electrical characterization. DIAMOND AND RELATED MATERIALS, Vol. 6, pp. 1282–1288. https://doi.org/10.1016/S0925-9635(97)00066-6

Davis, R. F., Weeks, T. W., Bremser, M. D., Tanaka, S., Kern, R. S., Sitar, Z., … Wang, C. (1997, February). Growth of AlN and GaN thin films via OMVPE and gas source MBE and their characterization. SOLID-STATE ELECTRONICS, Vol. 41, pp. 129–134. https://doi.org/10.1016/S0038-1101(96)00152-9

Kern, R. S., Jarrendahl, K., Tanaka, S., & Davis, R. F. (1997). Homoepitaxial SiC growth by molecular beam epitaxy. Physica Status Solidi. B, Basic Solid State Physics, 202(1), 379–404.

Kern, R. S., & Davis, R. F. (1997). Silicon carbide for high-temperature microelectronics: recent advances in material growth via gas source MBE and device research. Materials Science & Engineering. B, Solid-State Materials for Advanced Technology, 46(1-3), 240–247.

Rossow, U., Edwards, N. V., Bremser, M. D., Kern, R. S., Liu, H., Davis, R. F., & Aspnes, D. E. (1997). In-plane optical anisotropies of Al(x)Ga(1-x)N films in their regions of transparency. III-V nitrides: symposium held December 2-6, 1996, Boston, Massachusetts, U.S.A.  (Materials Research Society symposia proceedings ; v. 449), 835–840. https://doi.org/10.1557/proc-449-835