Nian Yang

Yang, N., & Wortman, J. J. (2001). A study of the effects of tunneling currents and reliability of sub-2 nm gate oxides on scaled n-MOSFETs. MICROELECTRONICS RELIABILITY, 41(1), 37–46. https://doi.org/10.1016/S0026-2714(00)00099-8

Yang, N., Henson, W. K., & Wortman, J. J. (2000). A comparative study of gate direct tunneling and drain leakage currents in N-MOSFET's with sub-2-nm gate oxides. IEEE TRANSACTIONS ON ELECTRON DEVICES, 47(8), 1636–1644. https://doi.org/10.1109/16.853042

Henson, W. K., Yang, N., Kubicek, S., Vogel, E. M., Wortman, J. J., De Meyer, K., & Naem, A. (2000). Analysis of leakage currents and impact on off-state power consumption for CMOS technology in the 100-nm regime. IEEE TRANSACTIONS ON ELECTRON DEVICES, 47(7), 1393–1400. https://doi.org/10.1109/16.848282

Wang, Z. G., Parker, C. G., Hodge, D. W., Croswell, R. T., Yang, N., Misra, V., & Hauser, JR. (2000). Effect of polysilicon gate type on the flatband voltage shift for ultrathin oxide-nitride gate stacks. IEEE ELECTRON DEVICE LETTERS, 21(4), 170–172. https://doi.org/10.1109/55.830971

Yang, N., Henson, W. K., Hauser, JR, & Wortman, J. J. (2000). Estimation of the effects of remote charge scattering on electron mobility of n-MOSFET's with ultrathin gate oxides. IEEE TRANSACTIONS ON ELECTRON DEVICES, 47(2), 440–447. https://doi.org/10.1109/16.822292

Yang, N., Henson, W. K., Hauser, JR, & Wortman, J. J. (1999). Modeling study of ultrathin gate oxides using direct tunneling current and capacitance-voltage measurements in MOS devices. IEEE TRANSACTIONS ON ELECTRON DEVICES, 46(7), 1464–1471. https://doi.org/10.1109/16.772492

Henson, W. K., Yang, N., & Wortman, J. J. (1999). Observation of oxide breakdown and its effects on the characteristics of ultra-thin-oxide nMOSFET's. IEEE ELECTRON DEVICE LETTERS, 20(12), 605–607. https://doi.org/10.1109/55.806099