@article{gupta_narayan_2014, title={Integration and structural analysis of strain relaxed bi-epitaxial zinc oxide(0001) thin film with silicon(100) using titanium nitride buffer layer}, volume={115}, number={4}, journal={Journal of Applied Physics}, author={Gupta, P. and Narayan, J.}, year={2014} }
 @article{gupta_dutta_mal_narayan_2012, title={Controlled p-type to n-type conductivity transformation in NiO thin films by ultraviolet-laser irradiation}, volume={111}, number={1}, journal={Journal of Applied Physics}, author={Gupta, P. and Dutta, T. and Mal, S. and Narayan, J.}, year={2012} }
 @article{mal_yang_gupta_prater_narayan_2011, title={Thin film epitaxy and magnetic properties of STO/TiN buffered ZnO on Si(001) substrates}, volume={59}, ISSN={["1873-2453"]}, DOI={10.1016/j.actamat.2010.12.058}, abstractNote={Abstract We report integration of epitaxial ZnO films with Si(0 0 1) substrates using STO/TiN buffer layers. It has been demonstrated that the preferential orientation of the a-plane ( 1 1 2 ¯ 0 ) and c-plane (0 0 0 2) of ZnO can be controlled via deposition temperature and oxygen partial pressure. At lower substrate temperatures ZnO grows solely in the (0 0 0 2) orientation, while the ( 1 1 2 ¯ 0 ) orientation was dominant at high substrate temperatures and low oxygen pressures. At higher pressures, the (0 0 0 2) orientation is preferred, while ( 1 1 2 ¯ 0 ) becomes weaker and a ( 1 0 1 ¯ 2 ) ZnO appears. Epitaxial relationships have been determined from X-ray diffraction φ-scans and it was found that both c- and a-ZnO had two types of orientations due to the cubic symmetry of the STO buffer layer. The orientation relationship of c-ZnO on STO(0 0 1) was ZnO(0 0 0 1) ∥ STO(1 0 0); ZnO[ 1 1 2 ¯ 0 ] ∥ STO[1 1 0] and ZnO[ 1 ¯ 2 1 ¯ 0 ] ∥ STO[ 1 ¯ 1 0 ], while that of a-ZnO on STO(0 0 1) was ZnO( 1 1 2 ¯ 0 ) ∥ STO(1 0 0); ZnO[ 1 1 2 ¯ 0 ] ∥ STO[1 1 0] and ZnO[0 0 0 2] ∥ STO[ 1 ¯ 1 0 ]. High-resolution transmission electron microscopy studies revealed atomically sharp interfaces with no reaction at the interface. Reversible d0 ferromagnetism was found to be present in both ZnO and STO layers. Our electron-energy-loss spectroscopy studies conclusively rule out the presence of any external ferromagnetic ions or impurities. Taken together, our data indicate that the ferromagnetic order in these undoped oxides might be defect mediated.}, number={6}, journal={ACTA MATERIALIA}, author={Mal, Siddhartha and Yang, Tsung-Han and Gupta, P. and Prater, J. T. and Narayan, J.}, year={2011}, month={Apr}, pages={2526–2534} }
 @article{dutta_gupta_bhosle_narayan_2009, title={MoOx modified ZnGaO based transparent conducting oxides}, volume={105}, number={5}, journal={Journal of Applied Physics}, author={Dutta, T. and Gupta, P. and Bhosle, V. and Narayan, J.}, year={2009} }