@article{schlesser_mcclure_sitar_2003, title={Mechanisms limiting electron field emission from diamond}, volume={13}, number={5}, journal={New Diamond and Frontier Carbon Technology}, author={Schlesser, R. and McClure, M. T. and Sitar, Z.}, year={2003}, pages={285–295} }
 @article{han_mcclure_wolden_vlahovic_soldi_sitar_2000, title={Fabrication and testing of a microstrip particle detector based on highly oriented diamond films}, volume={9}, number={3-6}, journal={Diamond and Related Materials}, author={Han, S. K. and McClure, M. T. and Wolden, C. A. and Vlahovic, B. and Soldi, A. and Sitar, S.}, year={2000}, pages={1008–1012} }
 @article{mccarson_schlesser_mcclure_sitar_1998, title={Electron emission mechanism from cubic boron nitride-coated molybdenum emitters}, volume={72}, ISSN={["0003-6951"]}, DOI={10.1063/1.121492}, abstractNote={The energy distribution of field-emitted electrons from Mo tips coated with intrinsic cubic boron nitride (c-BN) was studied in an effort to determine the origin of the emitted electrons. Voltage-dependent field-emission energy distribution (V-FEED) spectra were collected from the Mo emitters under ultra-high-vacuum conditions both before and after being coated. Emission current at a given voltage increased by as much as two orders of magnitude for the c-BN-coated emitters relative to bare emitters. The energy of field-emitted electrons from the c-BN-coated emitters was linearly dependent upon the applied voltage. Extrapolation of V-FEED data from c-BN-coated emitters to the flatband condition evidenced that the electrons were emitted from the conduction-band minimum of the c-BN coating at the c-BN/vacuum interface.}, number={22}, journal={APPLIED PHYSICS LETTERS}, author={McCarson, BL and Schlesser, R and McClure, MT and Sitar, Z}, year={1998}, month={Jun}, pages={2909–2911} }
 @article{schlesser_mccarson_mcclure_sitar_1998, title={Field emission energy distribution analysis of wide-band-gap field emitters}, volume={16}, number={2}, journal={Journal of Vacuum Science & Technology. B, Microelectronics and Nanometer Structures}, author={Schlesser, R. and McCarson, B. L. and McClure, M. T. and Sitar, Z.}, year={1998}, pages={689–692} }
 @article{schlesser_mcclure_mccarson_sitar_1998, title={Mechanisms of field emission from diamond coated Mo emitters}, volume={7}, ISSN={["0925-9635"]}, DOI={10.1016/S0925-9635(97)00290-2}, abstractNote={A combination of field emission energy distribution (FEED) and I–V measurements was used to study the field emission mechanisms of tip-shaped molybdenum emitters electrophoretically coated with nominally intrinsic diamond powders. Field-induced band bending was studied as a function of applied voltage and was interpreted in terms of a two-barrier model. Field emitted electrons originated from the conduction band minimum of diamond. Electron injection at the Mo/diamond interface was identified as the dominant field emission current limiting factor. It was concluded that potential negative electron affinity (NEA) properties of diamond did not contribute to a current enhancement. The latter statement was confirmed by the observation that graphite coatings enhanced emission currents in a similar way to diamond coatings.}, number={2-5}, journal={DIAMOND AND RELATED MATERIALS}, author={Schlesser, R and McClure, MT and McCarson, BL and Sitar, Z}, year={1998}, month={Feb}, pages={636–639} }
 @article{mcclure_schlesser_mccarson_sitar_1997, title={Electrical characterization of diamond and graphite coated Mo field emitters}, volume={15}, number={6}, journal={Journal of Vacuum Science & Technology. B, Microelectronics and Nanometer Structures}, author={McClure, M. T. and Schlesser, R. and McCarson, B. L. and Sitar, Z.}, year={1997}, pages={2067–2071} }
 @article{wolden_han_mcclure_sitar_prater_1997, title={Highly oriented diamond deposited using a low pressure flat flame}, volume={32}, ISSN={["0167-577X"]}, DOI={10.1016/S0167-577X(97)00003-7}, abstractNote={A multi-step process for the achievement of highly oriented, 〈100〉 textured diamond films on silicon using flat flame deposition has been developed. First, a bias-enhanced technique was used to achieve oriented nuclei on a Si 〈100〉 substrate in a microwave plasma reactor. Substrates were then transferred to the combustion system and rapidly grown into coalesced 〈100〉 films at a growth rate of 4–5 μm/h. X-ray texture analysis was used to characterize the films. It showed a 12 ° misalignment of the crystallites with respect to the surface normal, while the azimuthal misalignment was measured to be 20 °.}, number={1}, journal={MATERIALS LETTERS}, author={Wolden, CA and Han, SK and McClure, MT and Sitar, Z and Prater, JT}, year={1997}, month={Jul}, pages={9–12} }
 @article{shen_shmagin_koch_kolbas_fahmy_bergman_nemanich_mcclure_sitar_quan_1997, title={Photoluminescence from mechanically milled Si and SiO2 powders}, volume={55}, ISSN={["0163-1829"]}, DOI={10.1103/physrevb.55.7615}, abstractNote={The photoluminescence (PL) in as-received and milled Si and SiO2 powder is reported. The Si and SiO2 powder is characterized by chemical analysis, Raman scattering, x-ray photoelectron spectra, infrared absorption, x-ray diffraction, and differential thermal analysis. The results indicate that the Si powder has amorphous Si oxide and suboxide surface layers. The milling of Si powder results in the formation of nanocrystalline/amorphous Si components. An amorphous SiO2 component is formed by milling crystalline SiO2. The PL spectra for as-received Si, milled Si, and SiO2 powder exhibit similar peak shapes, peak maxima, and full width at half maximum values. For both the as-received and the milled Si powder, experimental results appear to exclude mechanisms for PL related to an amorphous Si component or Si-H or Si-OH bonds, or the quantum confinement effect. Similarly, for milled SiO2 powder mechanisms for PL do not appear related to Si-H or Si-OH bonds. Instead the greatly increased intensity of PL for milled SiO2 can be related to both the increased volume fraction of the amorphous SiO2 component and the increased density of defects introduced in the amorphous SiO2 upon milling. It is suggested that the PL for as-received Si, milling-induced nanocrystalline/amorphous Si, and milled SiO2 results from defects, such as the nonbridging oxygen hole center, in the amorphous Si suboxide and/or SiO2 components existing in these powder samples. The PL measurement for milled SiO2 is dependent on air pressure whereas that for as-received SiO2 is not, suggesting that new emitting centers are formed by milling.}, number={12}, journal={PHYSICAL REVIEW B}, author={Shen, TD and Shmagin, I and Koch, CC and Kolbas, RM and Fahmy, Y and Bergman, L and Nemanich, RJ and McClure, MT and Sitar, Z and Quan, MX}, year={1997}, month={Mar}, pages={7615–7623} }
 @misc{liu_wolter_mcclure_stoner_glass_hren_1996, title={Method for forming a diamond coated field emitter and device produced thereby}, volume={5,580,380}, number={1996 Dec. 3}, publisher={Washington, DC: U.S. Patent and Trademark Office}, author={Liu, J. and Wolter, S. and McClure, M. T. and Stoner, B. R. and Glass, J. T. and Hren, J. J.}, year={1996} }