Mohammad R. Mirabedini

Works (5)

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1999 article

The effects of Ge content in poly-Si1-xGex gate material on the tunneling barrier in PMOS devices

Shanware, A., Massoud, H. Z., Acker, A., Li, V. Z. Q., Mirabedini, M. R., Henson, K., … Wortman, J. J. (1999, September). MICROELECTRONIC ENGINEERING, Vol. 48, pp. 39–42.

By: A. Shanware*, H. Massoud, A. Acker n, V. Li n, M. Mirabedini, K. Henson n, . Hauser  n, J. Wortman

Source: Web Of Science
Added: August 6, 2018

1998 journal article

Effects of Si source gases (SiH4 and Si2H6) on polycrystalline- Si1-xGex deposited on oxide by RTCVD

Electrochemical and Solid State Letters, 1(3), 153–155.

By: V. Li, M. Mirabedini, E. Vogel, K. Henson, A. Batchelor, J. Wortman, R. Kuehn

Source: NC State University Libraries
Added: August 6, 2018

1998 journal article

Impact of floating gate dopant concentration and interpoly dielectric processing on tunnel dielectric reliability

JOURNAL OF THE ELECTROCHEMICAL SOCIETY, 145(4), 1351–1355.

By: H. Heinisch, B. Hornung, R. Linkous, S. Craig, M. Mirabedini & J. Wortman

Source: Web Of Science
Added: August 6, 2018

1998 journal article

Structure and properties of rapid thermal chemical vapor deposited polycrystalline silicon-germanium films on SiO2 using Si2H6, GeH4, and B2H6 gases

JOURNAL OF APPLIED PHYSICS, 83(10), 5469–5476.

By: V. Li, M. Mirabedini, B. Hornung, H. Heinisch, M. Xu, D. Batchelor, D. Maher, J. Wortman, R. Kuehn

Source: Web Of Science
Added: August 6, 2018

1997 journal article

Rapid thermal chemical vapor deposition of in situ boron doped polycrystalline silicon germanium films on silicon dioxide for complimentary metal oxide semiconductor applications

Applied Physics Letters, 71(23), 3388–3390.

By: V. Li, M. Mirabedini, R. Kuehn, J. Wortman, M. Ozturk, D. Batchelor, K. Christensen, D. Maher

Source: NC State University Libraries
Added: August 6, 2018