Works (5)
Updated: July 5th, 2023 16:03
1999 article
The effects of Ge content in poly-Si1-xGex gate material on the tunneling barrier in PMOS devices
Shanware, A., Massoud, H. Z., Acker, A., Li, V. Z. Q., Mirabedini, M. R., Henson, K., … Wortman, J. J. (1999, September). MICROELECTRONIC ENGINEERING, Vol. 48, pp. 39–42.
UN Sustainable Development Goal Categories
7. Affordable and Clean Energy
(OpenAlex)
Source: Web Of Science
Added: August 6, 2018
1998 journal article
Effects of Si source gases (SiH4 and Si2H6) on polycrystalline- Si1-xGex deposited on oxide by RTCVD
Electrochemical and Solid State Letters, 1(3), 153–155.
Source: NC State University Libraries
Added: August 6, 2018
1998 journal article
Impact of floating gate dopant concentration and interpoly dielectric processing on tunnel dielectric reliability
JOURNAL OF THE ELECTROCHEMICAL SOCIETY, 145(4), 1351–1355.
Source: Web Of Science
Added: August 6, 2018
1998 journal article
Structure and properties of rapid thermal chemical vapor deposited polycrystalline silicon-germanium films on SiO2 using Si2H6, GeH4, and B2H6 gases
JOURNAL OF APPLIED PHYSICS, 83(10), 5469–5476.
UN Sustainable Development Goal Categories
14. Life Below Water
(OpenAlex)
Source: Web Of Science
Added: August 6, 2018
1997 journal article
Rapid thermal chemical vapor deposition of in situ boron doped polycrystalline silicon germanium films on silicon dioxide for complimentary metal oxide semiconductor applications
Applied Physics Letters, 71(23), 3388–3390.
Source: NC State University Libraries
Added: August 6, 2018
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