Mohammad R. Mirabedini

Shanware, A., Massoud, H. Z., Acker, A., Li, V. Z. Q., Mirabedini, M. R., Henson, K., … Wortman, J. J. (1999, September). The effects of Ge content in poly-Si1-xGex gate material on the tunneling barrier in PMOS devices. MICROELECTRONIC ENGINEERING, Vol. 48, pp. 39–42. https://doi.org/10.1016/s0167-9317(99)00333-0

Li, V. Z. Q., Mirabedini, M. R., Vogel, E., Henson, K., Batchelor, A. D., Wortman, J. J., & Kuehn, R. T. (1998). Effects of Si source gases (SiH4 and Si2H6) on polycrystalline- Si1-xGex deposited on oxide by RTCVD. Electrochemical and Solid State Letters, 1(3), 153–155.

Heinisch, H. H., Hornung, B. E., Linkous, R. B., Craig, S. A., Mirabedini, M. R., & Wortman, J. J. (1998). Impact of floating gate dopant concentration and interpoly dielectric processing on tunnel dielectric reliability. JOURNAL OF THE ELECTROCHEMICAL SOCIETY, 145(4), 1351–1355. https://doi.org/10.1149/1.1838464

Li, V. Z. Q., Mirabedini, M. R., Hornung, B. E., Heinisch, H. H., Xu, M., Batchelor, D., … Kuehn, R. T. (1998). Structure and properties of rapid thermal chemical vapor deposited polycrystalline silicon-germanium films on SiO2 using Si2H6, GeH4, and B2H6 gases. JOURNAL OF APPLIED PHYSICS, 83(10), 5469–5476. https://doi.org/10.1063/1.367404

Li, V. Z. Q., Mirabedini, M. R., Kuehn, R. T., Wortman, J. J., Ozturk, M. C., Batchelor, D., … Maher, D. M. (1997). Rapid thermal chemical vapor deposition of in situ boron doped polycrystalline silicon germanium films on silicon dioxide for complimentary metal oxide semiconductor applications. Applied Physics Letters, 71(23), 3388–3390. https://doi.org/10.1063/1.120344