Virginia D. Wheeler

Lai, K. Y., Paskova, T., Wheeler, V. D., Chung, T. Y., Grenko, J. A., Johnson, M. A. L., … Evans, K. R. (2012). Indium incorporation in InGaN/GaN quantum wells grown on m-plane GaN substrate and c-plane sapphire. PHYSICA STATUS SOLIDI A-APPLICATIONS AND MATERIALS SCIENCE, 209(3), 559–564. https://doi.org/10.1002/pssa.201127345

Jur, J. S., Wheeler, V. D., Lichtenwalner, D. J., Maria, J.-P., & Johnson, M. A. L. (2011). Epitaxial growth of lanthanide oxides La2O3 and Sc2O3 on GaN. APPLIED PHYSICS LETTERS, 98(4). https://doi.org/10.1063/1.3541883

Park, J., Ozbek, A. M., Ma, L., Veety, M. T., Morgensen, M. P., Barlage, D. W., … Johnson, M. A. L. (2010). An analytical model of source injection for N-type enhancement mode GaN-based Schottky Source/Drain MOSFET's with experimental demonstration. SOLID-STATE ELECTRONICS, 54(12), 1680–1685. https://doi.org/10.1016/j.sse.2010.06.013

Lai, K. Y., Paskova, T., Wheeler, V. D., Grenko, J. A., Johnson, M. A. L., Udwary, K., … Evans, K. R. (2010). Effect of m-plane GaN substrate miscut on InGaN/GaN quantum well growth. JOURNAL OF CRYSTAL GROWTH, 312(7), 902–905. https://doi.org/10.1016/j.jcrysgro.2010.01.020

Lai, K. Y., Paskova, T., Wheeler, V. D., Grenko, J. A., Johnson, M. A. L., Barlage, D. W., … Evans, K. R. (2009). Excitation current dependent cathodoluminescence study of InGaN/GaN quantum wells grown on m-plane and c-plane GaN substrates. JOURNAL OF APPLIED PHYSICS, 106(11). https://doi.org/10.1063/1.3264729