Hisham Z. Massoud

Works (3)

Updated: February 10th, 2025 16:10

1999 article

Modeling the trends in valence-band electron tunneling in NMOSFETs with ultrathin SiO2 and SiO2/Ta2O5 dielectrics with oxide scaling

Shanware, A., Massoud, H. Z., Vogel, E., Henson, K., Hauser, JR, & Wortman, J. J. (1999, September). MICROELECTRONIC ENGINEERING, Vol. 48, pp. 295–298.

By: A. Shanware*, H. Massoud*, E. Vogel n, K. Henson n, . Hauser n & J. Wortman n

Source: Web Of Science
Added: August 6, 2018

1999 article

The effects of Ge content in poly-Si1-xGex gate material on the tunneling barrier in PMOS devices

Shanware, A., Massoud, H. Z., Acker, A., Li, V. Z. Q., Mirabedini, M. R., Henson, K., … Wortman, J. J. (1999, September). MICROELECTRONIC ENGINEERING, Vol. 48, pp. 39–42.

By: A. Shanware*, H. Massoud*, A. Acker n, V. Li  n, M. Mirabedini n, K. Henson n, . Hauser n, J. Wortman n

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Source: Web Of Science
Added: August 6, 2018

1998 journal article

Heterointerface dipoles: Applications to (a) Si-SiO2, (b) nitrided Si-N-SiO2, and (c) SiC-SiO2 interfaces

Journal of Vacuum Science & Technology. B, Microelectronics and Nanometer Structures, 16(4), 2191–2198.

By: G. Lucovsky, H. Yang & H. Massoud

Source: NC State University Libraries
Added: August 6, 2018

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