Works (3)

1999 journal article

Modeling the trends in valence-band electron tunneling in NMOSFETs with ultrathin SiO2 and SiO2/Ta2O5 dielectrics with oxide scaling

Microelectronic Engineering, 48(1-4), 295–298.

By: A. Shanware, H. Massoud, E. Vogel, K. Henson, J. Hauser & J. Wortman

Source: NC State University Libraries
Added: August 6, 2018

1999 journal article

The effects of Ge content in poly-Si1-xGex gate material on the tunneling barrier in PMOS devices

Microelectronic Engineering, 48(1-4), 39–42.

By: A. Shanware, H. Massoud, A. Acker, V. Li, M. Mirabedini, K. Henson, J. Hauser, J. Wortman

Source: NC State University Libraries
Added: August 6, 2018

1998 journal article

Heterointerface dipoles: Applications to (a) Si-SiO2, (b) nitrided Si-N-SiO2, and (c) SiC-SiO2 interfaces

Journal of Vacuum Science & Technology. B, Microelectronics and Nanometer Structures, 16(4), 2191–2198.

By: G. Lucovsky, H. Yang & H. Massoud

Source: NC State University Libraries
Added: August 6, 2018