@article{shanware_massoud_vogel_henson_hauser_wortman_1999, title={Modeling the trends in valence-band electron tunneling in NMOSFETs with ultrathin SiO2 and SiO2/Ta2O5 dielectrics with oxide scaling}, volume={48}, ISSN={["1873-5568"]}, DOI={10.1016/s0167-9317(99)00392-5}, abstractNote={Gate oxide scaling in NMOSFETs causes electrons to tunnel from the conduction and valence bands of the silicon substrate in the direct-tunneling regime. In NMOSFETs, the tunneling of electrons from the substrate's valence band is a source of the substrate current IB and contributes to the gate current IG. Oxide thickness scaling leads to an increase in the substrate current IB and in the ratio IBIG of substrate to gate current. In this paper, we report the trends in the IBIG ratio due to oxide thickness scaling in ultrathin SiO2 and SiO2Ta2O5 composite gate dielectrics.}, number={1-4}, journal={MICROELECTRONIC ENGINEERING}, author={Shanware, A and Massoud, HZ and Vogel, E and Henson, K and Hauser, JR and Wortman, JJ}, year={1999}, month={Sep}, pages={295–298} }
 @article{shanware_massoud_acker_li_mirabedini_henson_hauser_wortman_1999, title={The effects of Ge content in poly-Si1-xGex gate material on the tunneling barrier in PMOS devices}, volume={48}, ISSN={["0167-9317"]}, DOI={10.1016/s0167-9317(99)00333-0}, abstractNote={The use of SiGe gates in MOSFET technology has promise as a single-gate material for both n- and p-channel MOSFETs. The Ge content in the gate, however, affects the gate energy band diagram. While Ge in the SiGe gate does not affect the conduction-band energy level, it is found to raise the valence-band energy level and reduce the gate bandgap. This change results in an increase in the gate current resulting mainly from the tunneling of electrons from the valence band of the gate in PMOSFETs. This paper reports on the effects of Ge content in SiGe gates on the tunneling characteristics of PMOSFETs.}, number={1-4}, journal={MICROELECTRONIC ENGINEERING}, author={Shanware, A and Massoud, HZ and Acker, A and Li, VZQ and Mirabedini, MR and Henson, K and Hauser, JR and Wortman, JJ}, year={1999}, month={Sep}, pages={39–42} }
 @article{lucovsky_yang_massoud_1998, title={Heterointerface dipoles: Applications to (a) Si-SiO2, (b) nitrided Si-N-SiO2, and (c) SiC-SiO2 interfaces}, volume={16}, number={4}, journal={Journal of Vacuum Science & Technology. B, Microelectronics and Nanometer Structures}, author={Lucovsky, G. and Yang, H. and Massoud, H. Z.}, year={1998}, pages={2191–2198} }