Hisham Z. Massoud

Shanware, A., Massoud, H. Z., Vogel, E., Henson, K., Hauser, JR, & Wortman, J. J. (1999, September). Modeling the trends in valence-band electron tunneling in NMOSFETs with ultrathin SiO2 and SiO2/Ta2O5 dielectrics with oxide scaling. MICROELECTRONIC ENGINEERING, Vol. 48, pp. 295–298. https://doi.org/10.1016/s0167-9317(99)00392-5

Shanware, A., Massoud, H. Z., Acker, A., Li, V. Z. Q., Mirabedini, M. R., Henson, K., … Wortman, J. J. (1999, September). The effects of Ge content in poly-Si1-xGex gate material on the tunneling barrier in PMOS devices. MICROELECTRONIC ENGINEERING, Vol. 48, pp. 39–42. https://doi.org/10.1016/s0167-9317(99)00333-0

Lucovsky, G., Yang, H., & Massoud, H. Z. (1998). Heterointerface dipoles: Applications to (a) Si-SiO2, (b) nitrided Si-N-SiO2, and (c) SiC-SiO2 interfaces. Journal of Vacuum Science & Technology. B, Microelectronics and Nanometer Structures, 16(4), 2191–2198.