@article{fujimura_thomas_streiffer_kingon_1998, title={Preferred orientation, phase formation and the electrical properties of pulsed laser deposited SrBi2Ta2O9 thin films}, volume={37}, ISSN={["0021-4922"]}, DOI={10.1143/JJAP.37.5185}, abstractNote={ 
  Systematic studies on the preferred orientation, phase formation and the  
  electrical properties of pulsed laser deposited SrBi2Ta2O9 (SBT) have been performed.  
  At a substrate temperature of 600°C, the film on SiO2 was not crystallized. Above 650°C,  
  very strong diffraction from a non-ferroelectric, (111)-oriented fluorite phase was  
  obtained. Its crystallinity increased with increasing Bi content in the target. The fluorite  
  phase was also observed in the film on Pt deposited below 600°C, which together with  
  the pyrochlore phase resulted in the formation of an interfacial reaction product, Bi2Pt.  
  Above 650°C, the films tend to grow as the perovskite SBT phase with a c-axis  
  orientation which is not the polarization axis. In contrast, the formation of the fluorite  
  and pyrochlore phases can be suppressed on Ir electrodes. 
  }, number={9B}, journal={JAPANESE JOURNAL OF APPLIED PHYSICS PART 1-REGULAR PAPERS BRIEF COMMUNICATIONS & REVIEW PAPERS}, author={Fujimura, N and Thomas, DT and Streiffer, SK and Kingon, AJ}, year={1998}, month={Sep}, pages={5185–5188} }