Oleg V. Kononchuk

Cho, C. R., Yarykin, N., Brown, R. A., Kononchuk, O., Rozgonyi, G. A., & Zuhr, R. A. (1999). Evolution of deep-level centers in p-type silicon following ion implantation at 85 K. APPLIED PHYSICS LETTERS, 74(9), 1263–1265. https://doi.org/10.1063/1.123519

Beaman, K. L., Kononchuk, O., Koveshnikov, S., Osburn, C. M., & Rozgonyi, G. A. (1999). Lateral gettering of Fe on bulk and silicon-on-insulator wafers. JOURNAL OF THE ELECTROCHEMICAL SOCIETY, 146(5), 1925–1928. https://doi.org/10.1149/1.1391867

Brown, R. A., Kononchuk, O., & Rozgonyi, G. A. (1999). Simulation of metallic impurity gettering in silicon by MeV ion implantation. Nuclear Instruments & Methods in Physics Research. Section A, Accelerators, Spectrometers, Detectors, and Associated Equipment, 148(1-4), 322–328.

Kononchuk, O., Bondarenko, I., & Rozgonyi, G. (1998). Combined MOS/EBIC and TEM study of electrically active defects in SOI wafers. Diffusion and Defect Data. [Pt. B], Solid State Phenomena, 63-4(1998), 61–67.

Kononchuk, O., Korablev, K. G., Yarykin, N., & Rozgonyi, G. A. (1998). Diffusion of iron in the silicon dioxide layer of silicon-on-insulator structures. APPLIED PHYSICS LETTERS, 73(9), 1206–1208. https://doi.org/10.1063/1.122128

Brown, R. A., Kononchuk, O., Rozgonyi, G. A., Koveshnikov, S., Knights, A. P., Simpson, P. J., & Gonzalez, F. (1998). Impurity gettering to secondary defects created by MeV ion implantation in silicon. JOURNAL OF APPLIED PHYSICS, 84(5), 2459–2465. https://doi.org/10.1063/1.368438

Beaman, K. L., Agarwal, A., Kononchuk, O., Koveshnikov, S., Bondarenko, I., & Rozgonyi, G. A. (1997). Gettering of iron in silicon-on-insulator wafers. APPLIED PHYSICS LETTERS, 71(8), 1107–1109. https://doi.org/10.1063/1.119741

Brown, R. A., Kononchuk, O., Bondarenko, I., Romanowski, A., Radzimski, Z., Rozgonyi, G. A., & Gonzalez, F. (1997). Metallic impurity gettering and secondary defect formation in megaelectron volt self-implanted Czochralski and float-zone silicon. JOURNAL OF THE ELECTROCHEMICAL SOCIETY, 144(8), 2872–2881. https://doi.org/10.1149/1.1837910