Madhavan Ramamoorthy

Chemical and strain effects on Boron-doped Si(100)

PHYSICAL REVIEW B, 59(7), 4813–4821.

Defect energetics and impurity incorporation mechanisms at the arsenic-passivated Si(100) surface

PHYSICAL REVIEW B, 60(11), 8178–8184.

Chemical trends in impurity incorporation into Si(100)

PHYSICAL REVIEW LETTERS, 81(8), 1642–1645.

Enhanced modes of oxygen diffusion in silicon

SOLID STATE COMMUNICATIONS, 106(5), 243–248.