1999 journal article
Chemical and strain effects on Boron-doped Si(100)
PHYSICAL REVIEW B, 59(7), 4813–4821.
By: M. Ramamoorthy n, E. Briggs n & J. Bernholc n
Defect energetics and impurity incorporation mechanisms at the arsenic-passivated Si(100) surface
PHYSICAL REVIEW B, 60(11), 8178–8184.
1998 journal article
Chemical trends in impurity incorporation into Si(100)
PHYSICAL REVIEW LETTERS, 81(8), 1642–1645.
Enhanced modes of oxygen diffusion in silicon
SOLID STATE COMMUNICATIONS, 106(5), 243–248.
By: M. Ramamoorthy* & S. Pantelides*
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