@article{ashmawi_zikry_wang_reeber_2004, title={Modeling of residual stresses for thermally strained GaN/Al2O3 heterostructures}, volume={266}, ISSN={["1873-5002"]}, url={http://www.scopus.com/inward/record.url?eid=2-s2.0-2442603520&partnerID=MN8TOARS}, DOI={10.1016/j.jcrysgro.2004.02.105}, abstractNote={A finite element model and a specialized constitutive formulation were used to predict the evolving interfacial thermal mismatch stresses and strains in gallium nitride/alumina epitaxial layered systems. The constitutive formulation was based on having the coefficients of thermal expansion vary as a function of temperature for both material systems, which were assumed to be transversely isotropic. Different layer configurations were investigated, and it is shown that layer geometry is controlled by the evolution of induced thermal mismatch properties and residual stresses.}, number={4}, journal={JOURNAL OF CRYSTAL GROWTH}, author={Ashmawi, WM and Zikry, MA and Wang, K and Reeber, RR}, year={2004}, month={Jun}, pages={415–422} }
 @article{wang_reeber_salama_2001, title={Fourth-order elastic constants of magnesium oxide}, volume={228}, number={3}, journal={Physica Status Solidi. B, Basic Solid State Physics}, author={Wang, K. and Reeber, R. R. and Salama, K.}, year={2001}, pages={837–845} }
 @article{reeber_wang_2001, title={High temperature elastic constant prediction of some group III-nitrides}, volume={6}, number={3}, journal={MRS Internet Journal of Nitride Semiconductor Research}, author={Reeber, R. R. and Wang, K.}, year={2001}, pages={1–5} }
 @article{wang_reeber_2001, title={Thermal expansion and elastic properties of InN}, volume={79}, ISSN={["1077-3118"]}, DOI={10.1063/1.1400082}, abstractNote={The thermal expansion coefficients of wurtzite structure InN are evaluated within the constraints of a basic model and predicted for an extended temperature range. Together with the elastic constants provided earlier, this information gives a basis for optimizing thin-film growth conditions and thereby reducing the residual stresses in group-III-nitride thin-film devices.}, number={11}, journal={APPLIED PHYSICS LETTERS}, author={Wang, K and Reeber, RR}, year={2001}, month={Sep}, pages={1602–1604} }
 @article{reeber_wang_2000, title={Lattice parameters and thermal expansion of GaN}, volume={15}, ISSN={["0884-2914"]}, DOI={10.1557/JMR.2000.0011}, abstractNote={Neutron powder diffraction methods with Rietveld analysis are utilized to determine GaN lattice parameters from 15 to 298.1 K. Using these measurements and literature data, we calculated the thermal expansion of gallium nitride (GaN) and predicted its higher temperature thermal expansion. The results are compared with available experimental data and earlier work.}, number={1}, journal={JOURNAL OF MATERIALS RESEARCH}, author={Reeber, RR and Wang, K}, year={2000}, month={Jan}, pages={40–44} }
 @article{wang_reeber_2000, title={Mode Gruneisen parameters and negative thermal expansion of cubic ZrW2O8 and ZrMo2O8}, volume={76}, ISSN={["1077-3118"]}, DOI={10.1063/1.126296}, abstractNote={Thermal expansion for ZrW2O8 and ZrMo2O8 is analyzed by a multifrequency Einstein model. Vibrational modes that contribute significantly to the thermal expansion are empirically identified. For ZrW2O8, a negative Grüneisen parameter mode is consistent with the observed Raman spectral peak of 40 cm−1. Experimental confirmation of the results is proposed.}, number={16}, journal={APPLIED PHYSICS LETTERS}, author={Wang, K and Reeber, RR}, year={2000}, month={Apr}, pages={2203–2204} }
 @article{wang_reeber_2000, title={The perfect crystal, thermal vacancies and the thermal expansion coefficient of aluminium}, volume={80}, number={7}, journal={Philosophical Magazine. A, Physics of Condensed Matter, Defects and Mechanical Properties}, author={Wang, K. and Reeber, R. R.}, year={2000}, pages={1629–1643} }
 @article{wang_reeber_1999, title={Thermal residual stress modeling in AlN and GaN multilayer samples}, volume={4S1}, number={G3.18}, journal={MRS Internet Journal of Nitride Semiconductor Research}, author={Wang, K. and Reeber, R. R.}, year={1999} }
 @article{reeber_wang_1999, title={Thermophysical properties of alpha-tungsten carbide}, volume={82}, number={1}, journal={Journal of the American Ceramic Society}, author={Reeber, R. R. and Wang, K.}, year={1999}, pages={129–135} }
 @article{wang_reeber_1998, title={Finite element modeling of thermal residual stress in Tungsten/Tungsten-carbide composites}, volume={19}, number={4}, journal={Ceramic Engineering and Science Proceedings}, author={Wang, K. and Reeber, R. R.}, year={1998}, pages={177–184} }
 @misc{wang_reeber_1998, title={The role of defects on thermophysical properties: thermal expansion of V, Nh, Ta, Mo and W}, volume={23}, ISSN={["0927-796X"]}, DOI={10.1016/S0927-796X(98)00011-4}, abstractNote={Thermophysical properties at high temperatures and pressures are difficult to measure. Many reviews have approximated experimental data with empirical polynomial functions. In the case of thermal expansion and molar volume, extensive results for refractory body centered cubic (BCC) metals have been published. A critical evaluation of these experimental data is essential for many other studies. We provide this evaluation in terms of models that interrelate the thermophysical properties, self diffusion, and high temperature thermal defects. Experimental and theoretical methods for measuring and representing thermal expansion and the limitations of such methods are also briefly reviewed. Results for V, Nb, Ta, Mo, and W fall into two distinct subgroups relating to their elemental positions in the periodic table. The thermal expansions for these elements are analyzed within the constraints of a simple vibrational model and its equation of state. This approach represented the thermal expansion as the contributions from a perfect crystal and the crystal's high temperature anharmonicity as well as its thermal defects. Quantitative expressions, neglecting electronic contributions, are provided for the coefficient of thermal expansion and the expansivities for these five BCC metals from near 20°K to their melting temperatures. Vacancy formation enthalpies and entropies are also estimated. Our vacancy thermodynamic results are compared with earlier predictions and results from positron annihilation, thermal expansion, and specific heat measurements.}, number={3}, journal={MATERIALS SCIENCE & ENGINEERING R-REPORTS}, author={Wang, K and Reeber, RR}, year={1998}, month={Jul}, pages={101–137} }
 @inproceedings{wang_reeber_1998, title={Thermal expansion of GaN and AlN}, booktitle={Nitride semiconductors: Symposium held December 1-5, 1997, Boston, Massachusetts, U.S.A.  (Materials Research Society Symposium proceedings;  v. 482).}, publisher={Warrendale, Pa.: Materials Research Society, 1998.}, author={Wang, K. and Reeber, R. R.}, year={1998}, pages={863–868} }
 @misc{reeber_chu_yu_1991, title={Surface modification of boron carbide to form pockets of solid lubricant}, volume={5,075,130}, number={1991 Dec. 24}, publisher={Washington, DC: U.S. Patent and Trademark Office}, author={Reeber, R. and Chu, W. and Yu, N.}, year={1991} }
 @misc{reeber_chu_bedair, title={Gradient lens fabrication}, volume={4,956,000}, number={1990 Sep. 11}, publisher={Washington, DC: U.S. Patent and Trademark Office}, author={Reeber, R. R. and Chu, W. K. and Bedair, S. M.} }