1998 article

Acceptor and donor doping of AlxGa1-xN thin film alloys grown on 6H-SiC(0001) substrates via metalorganic vapor phase epitaxy

Bremser, M. D., Perry, W. G., Nam, O. H., Griffis, D. P., Loesing, R., Ricks, D. A., & Davis, R. F. (1998, April). JOURNAL OF ELECTRONIC MATERIALS, Vol. 27, pp. 229–232.

By: M. Bremser n, W. Perry n, O. Nam n, D. Griffis n, R. Loesing n, D. Ricks n, R. Davis*

author keywords: 6H-SiC(0001); acceptor doping; AlxGa1-xN; GaN; charge scattering; donor doping; electron mobility
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