@article{rowe_aspnes_pinczuk_yu_2015, title={Manuel Cardona Castro obituary}, volume={68}, ISSN={["1945-0699"]}, DOI={10.1063/pt.3.2695}, abstractNote={Manuel Cardona Castro passed away unexpectedly on 2 July 2014 at the Max Planck Institute for Solid State Research in Stuttgart, Germany, where he had worked since 1971. Cardona’s main interests were in optical spectroscopy and light scattering. Among the methods he employed were modulation spectroscopy, in which he was an early leader, and inelastic light-scattering techniques using both visible lasers and x rays generated by synchrotron radiation.Manuel Cardona CastroMAX PLANCK INSTITUTE FOR SOLID STATE RESEARCH/CARMEN-M. MÜLLERPPT|High resolutionCardona and his collaborators applied those techniques to study electrons and phonons in bulk semiconductors, semiconductor micro- and nanostructures, tailor-made isotopically pure materials, and high-Tc superconductors in the normal and superconducting states. In addition to his many experimental achievements, Cardona also contributed to theoretical semiconductor physics. He was an innovator in applying the k ∙ p approximation to understand the full-zone band structure of electrons, their effective masses, and g-factors. His other contributions to theory include the computation of the deformation potential mechanism of the electron–phonon interaction and the renormalization of the bandgap of elemental semiconductors, such as diamond, due to electron–phonon interactions.Cardona was born in Catalonia, Spain, on 7 September 1934. As a young boy he traveled throughout Europe and learned several languages. That knowledge became one of his well-known skills; often he would stop in the middle of a conversation in one language and change to another spoken by a visitor. After obtaining a master’s in physics in 1955 from the University of Barcelona, Cardona joined the University of Madrid as an instructor for electronics. In 1956 he was awarded a graduate fellowship to Harvard University to work under William Paul. He investigated the dielectric properties of semiconductors—in particular, germanium and silicon. With that work as his thesis, he received a PhD in applied physics from Harvard in 1959.That same year Cardona joined RCA Laboratories in Zürich as a member of the technical staff. There he extended his reflectance work to III–V semiconductors. In 1961 he moved to RCA Labs in Princeton, New Jersey, where he continued to work on the optical properties of semiconductors and started investigating their microwave properties. He introduced a notation to label peaks in the reflectance spectra of semiconductors according to the specific parts of the energy-band structure in momentum space where the peaks originate. That notation also highlights peaks that are related via spin–orbit splitting. His notation has since become the standard method for labeling reflectance spectra of semiconductors.Between 1964 and 1971, Cardona was a member of the physics faculty of Brown University. He spent the summer of 1965 as a visiting professor at the University of Buenos Aires under the auspices of the Ford Foundation. Between 1969 and 1970, he received a John S. Guggenheim Memorial Scholarship, which allowed him to spend a year at the German Electron Synchrotron in Hamburg, Germany, where he studied the vacuum-UV optical properties of semiconductors. In 1971 he moved to Stuttgart as one of the founding directors of the recently created Max Planck Institute for Solid State Research. His activities there came to have a global impact. Although he retired in 2000, he continued to collaborate daily with numerous scientists throughout Europe, the Americas, and elsewhere until his death.Cardona authored or coauthored more than 1300 publications in international journals and is one of the eight most cited physicists since 1970. He wrote or edited 10 monographs on solid-state physics and cowrote a textbook on semiconductors. Beginning in 1972 Cardona served on the editorial boards of seven journals, including being the editor-in-chief of Solid State Communications from 1992 to 2004. He received the 1984 Frank Isakson Prize for Optical Effects in Solids and the 1997 John Wheatley Award from the American Physical Society, the 2001 Mott Medal and Prize from the Institute of Physics, the 2004 Blaise Pascal Medal in Physics from the European Academy of Sciences, and numerous other prestigious honors.In his memory, a special symposium entitled “Electrons, Phonons, and Photons in Semiconductors” was recently held at the Max Planck Institute for Solid State Research. The gathering was attended by more than 100 of his former students, postdoctoral fellows, and collaborators from around the world. The physics community and many others who have known him will miss him immensely and remember him for his encyclopedic knowledge of semiconductors and superconductors, his sense of humor, and most of all, his warm and generous personality.© 2015 American Institute of Physics.}, number={2}, journal={PHYSICS TODAY}, author={Rowe, Jack and Aspnes, Dave and Pinczuk, Aron and Yu, Peter Y.}, year={2015}, month={Feb}, pages={58–58} }
 @article{dougherty_sandin_vescovo_rowe_2014, title={Coverage-dependent surface magnetism of iron phthalocyanine on an O-Fe(110) surface}, volume={90}, ISSN={["2469-9969"]}, DOI={10.1103/physrevb.90.045406}, abstractNote={Iron phthalocyanine adsorbed on an oxygen covered Fe(110) surface shows a complex coverage-dependent spin polarization during growth of a molecular monolayer. Spin polarization is modified at low submonolayer coverages, absent at intermediate submonolayer coverages, and reappears in modified form for a complete monolayer. This is attributed to coverage-dependent adsorption configurations from a random adsorption system to a packed monolayer with a well-defined interfacial spin polarization. In addition, we report on the observation of a rotation of the spin direction of photoelectrons in the presence of molecules which is attributed to molecular modifications of surface magnetic anisotropy.}, number={4}, journal={PHYSICAL REVIEW B}, author={Dougherty, Daniel B. and Sandin, Andreas and Vescovo, Elio and Rowe, J. E.}, year={2014}, month={Jul} }
 @article{an_rowe_dougherty_lee_diebold_2014, title={Optical second-harmonic generation induced by electric current in graphene on Si and SiC substrates}, volume={89}, ISSN={["2469-9969"]}, DOI={10.1103/physrevb.89.115310}, abstractNote={We find that the flow of direct electric current (dc) through graphene on substrate enhances surface optical second-harmonic generation (SHG) from the graphene/substrate system. The current can enhance surface SHG by about 300% for a chemical-vapor-deposition (CVD) graphene monolayer on a SiO${}_{2}/\mathrm{Si}(001)$ substrate, and by about 25% for an epitaxial four-layer-graphene film on a 3.5\ifmmode^\circ\else\textdegree\fi{}-miscut vicinal SiC(0001) substrate. The enhancement in both the CVD and epitaxial graphene samples is due to electric field-induced SHG, which is produced by the current-associated vertical electric field at the SiO${}_{2}/$Si interface or at the graphene/SiC interface. Measurements of rotational-anisotropy SHG (RA-SH) from both samples revealed that the current-induced SHG varies strongly with the measurement location along the current flow direction. By measuring RA-SH from the vicinal SiC(0001) substrate, we determined all three second-order susceptibility tensor elements (${d}_{33}$ = \ensuremath{-}52.0 pm/V, ${d}_{15}$ = 20.0 pm/V, and ${d}_{31}$ = 18.7 pm/V) that characterize the SHG response of hexagonal SiC at the fundamental wavelength of 740 nm. We further determined the three effective susceptibility tensor elements (${d}_{33}$ = \ensuremath{-}135.8 pm/V, ${d}_{15}$ = 18.5 pm/V, and ${d}_{31}$ = 14.6 pm/V) that characterize the surface SHG from the graphene/vicinal-SiC(0001) sample and finally showed that the current-dependent tensor element ${d}_{33}$ can be enhanced to a large value of ${d}_{33}$ = \ensuremath{-}199.0 pm/V by electric current in epitaxial graphene.}, number={11}, journal={PHYSICAL REVIEW B}, author={An, Yong Q. and Rowe, J. E. and Dougherty, Daniel B. and Lee, Ji Ung and Diebold, Alain C.}, year={2014}, month={Mar} }
 @article{mcafee_gann_guan_stuart_rowe_dougherty_ade_2014, title={Toward Single-Crystal Hybrid-Carbon Electronics: Impact of Graphene Substrate Defect Density on Copper Phthalocyanine Film Growth}, volume={14}, ISSN={["1528-7505"]}, DOI={10.1021/cg500504u}, abstractNote={Graphene has long been recognized as a potential replacement for indium tin oxide as a transparent conducting substrate that may not only be cheaper to manufacture but also may provide mechanical flexibility and templating for preferential organic film growth. Here, we report the discovery that the thin film growth mode and crystal structure of copper phthalocyanine (CuPc), a prototype organic semiconductor, is extremely sensitive to even atomic-scale defects (e.g., steps) on the graphene surface and that high quality films can be grown with a well-defined crystal orientation that should be favorable for optimized solar cell applications. The initial growth involves flat-lying copper phthalocyanine molecules in a triclinic brickstone crystal with (012) orientation. Thicker films on pristine graphite, as well as thin films on lower quality graphene, show an orientational transition to the flat-lying (112)-oriented brickstone, which nucleates near film defects and grows in more compact 3D islands. The thi...}, number={9}, journal={CRYSTAL GROWTH & DESIGN}, author={McAfee, Terry and Gann, Eliot and Guan, Tianshuai and Stuart, Sean C. and Rowe, Jack and Dougherty, Daniel B. and Ade, Harald}, year={2014}, month={Sep}, pages={4394–4401} }
 @article{sandin_rowe_dougherty_2013, title={Improved graphene growth in UHV: Pit-free surfaces by selective Si etching of SiC(0001)-Si with atomic hydrogen}, volume={611}, ISSN={["1879-2758"]}, DOI={10.1016/j.susc.2013.01.010}, abstractNote={We present a novel technique of growing UHV graphene using atomic hydrogen etching of SiC(0001)–Si surfaces. Hydrogen atoms generated from a hot tungsten filament selectively etch silicon surface atoms thereby facilitating the Si-sublimation process at temperatures around 1000 °C according to Auger Electron Spectroscopy. This allows for separate, non-thermal control of the rate of formation of the interfacial buffer layer formation to yield reduced pit formation observed by scanning tunneling microscopy during subsequent UHV graphene growth.}, journal={SURFACE SCIENCE}, author={Sandin, Andreas and Rowe, J. E. and Dougherty, Daniel B.}, year={2013}, month={May}, pages={25–31} }
 @article{reynolds_reynolds_mohanta_muth_rowe_everitt_aspnes_2013, title={Shallow acceptor complexes in p-type ZnO}, volume={102}, ISSN={["1077-3118"]}, DOI={10.1063/1.4802753}, abstractNote={We show that N-doped ZnO films grown on sapphire can exhibit significant (∼1018 cm−3) room-temperature p-type behavior when sufficient nitrogen (N) is incorporated and the material is annealed appropriately. Substitutional N on the oxygen (O) sublattice is a deep acceptor; however, shallow acceptor complexes involve N, H, and zinc vacancies (VZn). Combining secondary ion mass spectrometry, Raman-scattering, photoluminescence, and Hall-effect data, we establish the evolution of N from its initial incorporation on a Zn site to a final shallow acceptor complex VZn_NO_H+ with an ionization energy of ca. 130 meV. This complex is responsible for the observed p-type behavior.}, number={15}, journal={APPLIED PHYSICS LETTERS}, author={Reynolds, J. G. and Reynolds, C. L., Jr. and Mohanta, A. and Muth, J. F. and Rowe, J. E. and Everitt, H. O. and Aspnes, D. E.}, year={2013}, month={Apr} }
 @article{stuart_satchet_sandin_maria_rowe_dougherty_ulrich_2013, title={Smooth MgO films grown on graphite and graphene by pulsed laser deposition}, volume={31}, ISSN={["2166-2746"]}, DOI={10.1116/1.4818511}, abstractNote={Pulsed laser deposition was used to grow thin (1–100 nm) magnesium oxide films directly on graphite and epitaxial graphene on SiC(0001). The authors observe very smooth (typical rms roughness of ∼0.4 nm) film morphologies that are nearly independent of film thickness and conformal to the substrate for films grown on room temperature substrates. Surface roughness is less than 1 nm for thicknesses up to 100 nm and is independent of oxygen background pressure during growth. X-ray diffraction shows no evidence of crystallinity for films grown on room temperature substrates but shows ⟨100⟩ texture for films grown on heated substrates that also have very rough surface morphologies. X-ray photoelectron spectroscopy shows hydroxylation of films due to air exposure that can only be partially removed by annealing, indicating the presence of atomic defects in the films.}, number={5}, journal={JOURNAL OF VACUUM SCIENCE & TECHNOLOGY B}, author={Stuart, Sean C. and Satchet, Edward and Sandin, Andreas and Maria, Jon-Paul and Rowe, John E. and Dougherty, Daniel B. and Ulrich, Marc}, year={2013}, month={Sep} }
 @article{sandin_jayasekera_rowe_kim_buongiorno nardelli_dougherty_2012, title={Multiple coexisting intercalation structures of sodium in epitaxial graphene-SiC interfaces}, volume={85}, ISSN={1098-0121 1550-235X}, url={http://dx.doi.org/10.1103/PhysRevB.85.125410}, DOI={10.1103/physrevb.85.125410}, abstractNote={This article discusses multiple coexisting intercalation structures of sodium in peitaxial graphene-SiC interfaces.}, number={12}, journal={Physical Review B}, publisher={American Physical Society (APS)}, author={Sandin, Andreas and Jayasekera, Thushari and Rowe, J. E. and Kim, Ki Wook and Buongiorno Nardelli, M. and Dougherty, Daniel B.}, year={2012}, month={Mar} }
 @article{nelson_sandin_dougherty_aspnes_rowe_diebold_2012, title={Optical and structural characterization of epitaxial graphene on vicinal 6H-SiC(0001)-Si by spectroscopic ellipsometry, Auger spectroscopy, and STM}, volume={30}, ISSN={["2166-2754"]}, DOI={10.1116/1.4726199}, abstractNote={The authors report results of spectroscopic ellipsometry (SE) measurements in the near-IR, visible, and near-UV spectral ranges using a Woollam dual rotating-compensator ellipsometer, analyzing data in terms of both epitaxial graphene and interface contributions. The SiC samples were cleaned by standard methods of CMP and HF etching prior to mounting in UHV and growing epitaxial graphene by thermal annealing at ∼1400 °C. Most samples were vicinally cut 3.5° off (0001) toward [11−20]. STM measurements show that the initial regular step edges were replaced by somewhat irregular edges after graphene growth. From growth-temperature and Auger data the authors estimate that the graphene is ∼3–4 ML thick. The authors find significant differences among the spectral features of the interface “buffer” layer and those of graphene. Specifically, the hyperbolic-exciton peak reported previously at ∼4.5 eV in graphene shifts to a similarly shaped peak at ∼4 eV in the interface buffer layer. The authors attribute this shift to a significant component of sp3 bonded carbon in the buffer, which occurs in addition to the sp2 bonded carbon that is present in the graphene layer. SE data in the terahertz range obtained by Hoffman et al. [Thin Solid Films 519, 2593 (2011)] show that the mobility values of graphene grown on the carbon face of SiC vary with proximity to the substrate. This leads to the question as to whether an interface layer at the Si face has properties (i.e., dielectric function/complex refractive index) that are different from and/or affect those of the graphene layers.}, number={4}, journal={JOURNAL OF VACUUM SCIENCE & TECHNOLOGY B}, author={Nelson, Florence and Sandin, Andreas and Dougherty, Daniel B. and Aspnes, David E. and Rowe, Jack E. and Diebold, Alain C.}, year={2012}, month={Jul} }
 @article{sandin_pronschinske_rowe_dougherty_2010, title={Incomplete screening by epitaxial graphene on the Si face of 6H-SiC(0001)}, volume={97}, ISSN={["1077-3118"]}, DOI={10.1063/1.3484966}, abstractNote={A biased scanning tunneling microscope (STM) tip is used to study the ability of carriers in graphene to screen external electrostatic fields by monitoring the effect of tunneling-junction width on the position of image potential-derived surface states. These states are unusually sensitive to local electric fields due to the STM tip in both single layer and bilayer epitaxial graphene. This is attributed to the incomplete screening of applied fields in epitaxial graphene on SiC(0001). Our observations imply that charged impurity scattering is likely to be a dominant factor in the transport properties of epitaxial graphene on SiC.}, number={11}, journal={APPLIED PHYSICS LETTERS}, author={Sandin, Andreas and Pronschinske, Alex and Rowe, J. E. and Dougherty, Daniel B.}, year={2010}, month={Sep} }
 @article{vasic_sadowski_choi_zhou_wiebe_cheong_rowe_ulrich_2010, title={Surface reconstruction of hexagonal Y-doped HoMnO3 and LuMnO3 studied using low-energy electron diffraction}, volume={81}, number={16}, journal={Physical Review. B, Condensed Matter and Materials Physics}, author={Vasic, R. and Sadowski, J. T. and Choi, Y. J. and Zhou, H. D. and Wiebe, C. R. and Cheong, S. W. and Rowe, J. E. and Ulrich, M. D.}, year={2010} }
 @article{tedesco_rowe_nemanich_2010, title={Titanium silicide islands on atomically clean Si(100): Identifying single electron tunneling effects}, volume={107}, ISSN={["0021-8979"]}, DOI={10.1063/1.3437049}, abstractNote={Titanium silicide islands have been formed by the ultrahigh vacuum deposition of thin films of titanium (<2 nm) on atomically clean Si(100) substrates followed by annealing to ∼800 °C. Scanning tunneling microscopy (STM) and scanning tunneling spectroscopy have been performed on these islands to record current-voltage (I-V) curves. Because each island forms a double barrier tunnel junction (DBTJ) structure with the STM tip and the substrate, they would be expected to exhibit single electron tunneling (SET) according to the orthodox model of SET. Some of the islands formed are small enough (diameter <10 nm) to exhibit SET at room temperature and evidence of SET has been identified in some of the I-V curves recorded from these small islands. Those curves are analyzed within the framework of the orthodox model and are found to be consistent with that model, except for slight discrepancies of the shape of the I-V curves at current steps. However, most islands that were expected to exhibit SET did not do so, and the reasons for the absence of observable SET are evaluated. The most likely reasons for the absence of SET are determined to be a wide depletion region in the substrate and Schottky barrier lowering due to Fermi level pinning by surface states of the clean silicon near the islands. The results establish that although the Schottky barrier can act as an effective tunnel junction in a DBTJ structure, the islands may be unreliable in future nanoelectronic devices. Therefore, methods are discussed to improve the reliability of future devices.}, number={12}, journal={JOURNAL OF APPLIED PHYSICS}, author={Tedesco, J. L. and Rowe, J. E. and Nemanich, R. J.}, year={2010}, month={Jun} }
 @article{tedesco_rowe_nemanich_2009, title={Conducting atomic force microscopy studies of nanoscale cobalt silicide Schottky barriers on Si(111) and Si(100)}, volume={105}, ISSN={["0021-8979"]}, DOI={10.1063/1.3100212}, abstractNote={Cobalt silicide (CoSi2) islands have been formed by the deposition of thin films (∼0.1–0.3 nm) of cobalt on clean Si(111) and Si(100) substrates in ultrahigh vacuum (UHV) followed by annealing to ∼880 °C. Conducting atomic force microscopy has been performed on these islands to characterize and measure their current-voltage (I-V) characteristics. Current-voltage curves were analyzed using standard thermionic emission theory to obtain the Schottky barrier heights and ideality factors between the silicide islands and the silicon substrates. Current-voltage measurements were performed ex situ for one set of samples (termed “passivated surfaces”) where the silicon surface surrounding the islands was passivated with a native oxide. Other samples (termed “clean surfaces”) remained in UHV, while I-V curves were recorded. By comparing the barrier heights and ideality factors for islands on passivated surfaces and clean surfaces, the effects of the nonpassivated surfaces on conduction have been studied. The barrier heights measured from CoSi2 islands on clean surfaces are found to be ∼0.2–0.3 eV below barrier heights measured from similar islands on passivated surfaces. The main cause of the reduced Schottky barrier in the clean surface samples is attributed to Fermi level pinning by nonpassivated surface states of the clean silicon surface. However, the measured barrier heights of the islands are equivalent on both clean Si(111) and Si(100) surfaces, suggesting that the nonpassivated surface is influenced by cobalt impurities. Furthermore, the barrier heights of islands on the clean surfaces are lower than what can be explained by Fermi level pinning alone, suggesting the presence of additional reductions in the Schottky barrier heights. These variations are greater than what can be attributed to experimental error, and the additional barrier height lowering is primarily attributed to spreading resistance effects. Schottky barrier inhomogeneity is also identified as a possible cause of the additional barrier height lowering and nonideality in the Schottky contacts. Current-voltage measurements of the clean surface samples were also obtained at several temperatures. The barrier heights were found to decrease, and the ideality factors were found to increase with decreasing temperature. The dependence of the barrier height is attributed to the temperature variation of the Fermi level.}, number={8}, journal={JOURNAL OF APPLIED PHYSICS}, author={Tedesco, J. L. and Rowe, J. E. and Nemanich, R. J.}, year={2009}, month={Apr} }
 @article{kong_rowe_nemanich_2008, title={Single molecule measurements with photoelectron emission microscopy}, volume={26}, ISSN={["2166-2746"]}, DOI={10.1116/1.2932094}, abstractNote={In this research, variable wavelength photoelectron emission microscopy (PEEM) with tunable UV light from the Duke University free electron laser is applied to image single fibrinogen molecules adsorbed onto n-type silicon surfaces. High resolution PEEM images (∼10nm) are obtained with photon energies from 4to6eV. Wavelength-dependent image sequences are analyzed to determine the photoionization spectrum and the photoelectron emission threshold of individual molecules. The experimental data are fitted using temperature dependent Fowler law, square-root law, and cube-root law. The details of the theoretical models are discussed. The square-root and cube-root fittings reveal the ionization threshold of 5.0eV for fibrinogen adsorbed onto n-type silicon, while temperature dependent Fowler law shows a threshold of 4.9eV. The accuracy of the measurements is calculated to be ±0.2eV. The authors conclude that no significant difference is observed from the three theoretical fitting approaches.}, number={4}, journal={JOURNAL OF VACUUM SCIENCE & TECHNOLOGY B}, author={Kong, Xianhua and Rowe, J. E. and Nemanich, R. J.}, year={2008}, month={Jul}, pages={1461–1465} }
 @article{fleming_fulton_lucovsky_rowe_ulrich_luening_2007, title={Local bonding analysis of the valence and conduction band features of TiO2}, volume={102}, ISSN={["1089-7550"]}, DOI={10.1063/1.2764004}, abstractNote={An analysis of the valence and conduction band electronic structure of TiO2 as studied by ultraviolet photoemission spectroscopy (UPS) and x-ray absorption spectroscopy (XAS) using synchrotron radiation is reported. Valence band spectra from UPS have been deconvolved using a five-peak model. The spectra are interpreted based on the peak assignments to the XAS data and the symmetries of the valence band states. The interpretation is consistent with theoretical calculations of molecular orbitals found in the literature. The removal of the d-state degeneracies that arise from a collective Jahn–Teller splitting of the crystal field split t2g and eg states is observed and scales with the conduction band results from the absorption data. These Jahn–Teller derived energy separations are present in the O K1 and Ti L3 spectra but are not resolved in the photoemission valence band spectra. Two defect states are clearly observed ∼0.7 and 2.0 eV above the valence band edge and are attributed to the presence of oxygen atom vacancies that are described in terms of Ti3+ states.}, number={3}, journal={JOURNAL OF APPLIED PHYSICS}, author={Fleming, I. and Fulton, C. C. and Lucovsky, G. and Rowe, J. E. and Ulrich, M. D. and Luening, J.}, year={2007}, month={Aug} }
 @article{luckenbach_early_rowe_borski_daniels_godwin_2005, title={Aromatase cytochrome P450: Cloning, intron variation, and ontogeny of gene expression in southern flounder (Paralichthys lethostigma)}, volume={303A}, ISSN={["2471-5646"]}, DOI={10.1002/jez.a.198}, abstractNote={Aromatase cytochrome P450 (P450arom) is the enzyme complex responsible for conversion of androgens to estrogens in vertebrates. Consequently, in some fishes its activity appears critical to ovarian differentiation. Southern flounder (Paralichthys lethostigma) is a commercially important flatfish in which females grow larger than males and sex determination is temperature sensitive. Through cloning of the P450arom gene in ovary and quantitative reverse transcription-polymerase chain reaction, we developed a biomarker for early female differentiation in southern flounder. The deduced amino acid sequence for southern flounder P450arom is similar to other teleosts. Comparison of P450arom intron sequences from fish of different populations revealed substantial inter-individual variation. Adult ovary and spleen exhibited high levels of P450arom mRNA, while P450arom mRNA was only weakly detected in testes. Brain, liver, intestine, kidney, gill, muscle, and heart showed little or no P450arom mRNA expression. Gonads of wild and hatchery-produced juvenile flounder of sizes spanning the period of sex differentiation initially exhibited low levels of P450arom mRNA followed by increases in some individuals and bifurcation into two clearly segregated groups (i.e., putative males and females) beginning at approximately 65 mm in total length. Gonadal histology confirmed predictions of sex based on P450arom expression in juvenile flounder, demonstrating that the patterns of P450arom expression observed relate to sex-specific differentiation. This research represents a unique approach to assessing sex differentiation in a natural population, and a powerful technique for better understanding mechanisms of flounder sex determination and rapidly defining conditions for controlling sex for aquaculture.}, number={8}, journal={JOURNAL OF EXPERIMENTAL ZOOLOGY PART A-ECOLOGICAL AND INTEGRATIVE PHYSIOLOGY}, author={Luckenbach, JA and Early, LW and Rowe, AH and Borski, RJ and Daniels, HV and Godwin, J}, year={2005}, month={Aug}, pages={643–656} }
 @article{gladys_ermanoski_jackson_quinton_rowe_madey_2004, title={A high resolution photoemission study of surface core-level shifts in clean and oxygen-covered Ir(210) surfaces}, volume={135}, ISSN={["1873-2526"]}, DOI={10.1016/j.elspec.2004.02.109}, abstractNote={High resolution soft X-ray photoemission electron spectroscopy (SXPS), using synchrotron radiation, is employed to investigate 4f core-level features of four differently-prepared Ir(2 1 0) surfaces: clean planar, oxygen-covered planar, oxygen-induced faceted, and clean faceted surfaces. Surface and bulk peak identifications are supported by measurements at different photon energies (thus probing different electron escape depths) and variable emission angles. Iridium 4f7/2 photoemission spectra are fitted with Doniach–Sunjic lineshapes. The surface components are identified with core levels positioned at lower binding energies than the bulk components, in contrast to previous reports of binding energy inversion on Ir(1 0 0) (1×1) and (5×1) surfaces. For clean planar Ir(2 1 0) three surface Ir 4f7/2 features are observed with core-level shifts of −765, −529, and −281 meV, with respect to the bulk; these are associated with the first, second and third layers of atoms, respectively, for atomically rough Ir(2 1 0). Adsorption of oxygen onto the planar Ir(2 1 0) surface is found to cause a suppression and shift of the surface features to higher binding energies. Annealing at T≥600 K in oxygen produces a faceted surface as verified by low energy electron diffraction (LEED). A comparison of planar and faceted oxygen-covered surfaces reveals minor differences in the normal emission SXPS spectra, while grazing emission spectra exhibit differences. The SXPS spectrum of the clean, faceted Ir(2 1 0) exhibits small differences in comparison to the clean planar case, with surface features having binding energy shifts of −710, −450, and −230 meV.}, number={2-3}, journal={JOURNAL OF ELECTRON SPECTROSCOPY AND RELATED PHENOMENA}, author={Gladys, MJ and Ermanoski, I and Jackson, G and Quinton, JS and Rowe, JE and Madey, TE}, year={2004}, month={Apr}, pages={105–112} }
 @article{ellis_park_hulbert_ulrich_rowe_2004, title={Influence of substrate temperature on epitaxial copper phthalocyanines studied by photoemission spectroscopy}, volume={95}, ISSN={["1089-7550"]}, DOI={10.1063/1.1637137}, abstractNote={We report the formation of heteroepitaxial copper phthalocyanine (CuPc) overlayers on a “5×20” reconstructed Au(001) substrate, with thicknesses ranging from 0.8 to 26.9 Å. The adsorbed CuPc at room temperature forms a quasiepitaxial overlayer, incommensurate with the substrate lattice, aligned with the 〈110〉 and 〈11̄0〉 axes of the Au(001) surface. At elevated substrate temperatures (ET) between 200 and 250 °C, the deposition of CuPc results in a 13.8 Å square overlayer structure commensurate with the substrate lattice. The electronic structures of CuPc overlayers grown at both RT and ET are also investigated. While the films grown at both temperatures generally exhibit lowering of the vacuum level, consistent with the presence of an interfacial dipole, it is the ET-grown CuPc overlayer that exhibits a sharp decrease of the surface vacuum level upon completion of a monolayer. The experimental CuPc valence band energies are compared with the calculated ionization potentials of a CuPc molecule. Using the tunability of the light source and the dependence of the photoionization cross sections on photon energy for various atomic shells, the CuPc molecular orbitals are assigned with either Cu d states or Pc-derived valence orbitals.}, number={3}, journal={JOURNAL OF APPLIED PHYSICS}, author={Ellis, TS and Park, KT and Hulbert, SL and Ulrich, MD and Rowe, JE}, year={2004}, month={Feb}, pages={982–988} }
 @article{fleming_ulrich_efimenko_genzer_chan_madey_oh_zhou_rowe_2004, title={Near-edge absorption fine structure and UV photoemission spectroscopy studies of aligned single-walled carbon nanotubes on Si(100) substrates}, volume={22}, ISSN={["2166-2746"]}, DOI={10.1116/1.1775190}, abstractNote={We report near-edge absorption fine structure (NEXAFS) and UV photoemission spectroscopy (UPS) studies of aligned single-walled carbon nanotube films on Si(100) substrates. Orientation of the films was detected in the NEXAFS spectra, with the intensity of the π* core exciton at 284.4 eV showing a strong dependence on nanotube alignment with respect to the polarization of the incident radiation. At lower angles of incidence, the intensity of the π* peak was higher for all orientations, which we attribute to the greater accessibility of the π* orbitals. UPS spectra of the films showed little angular dependence and included features consistent with the total density of states of graphite. As a result of the nanotube curvature and the distribution of nanotube chiralities, the UPS spectra are similar to angle-integrated graphite spectra.}, number={4}, journal={JOURNAL OF VACUUM SCIENCE & TECHNOLOGY B}, author={Fleming, L and Ulrich, MD and Efimenko, K and Genzer, J and Chan, ASY and Madey, TE and Oh, SJ and Zhou, O and Rowe, JE}, year={2004}, pages={2000–2004} }
 @article{ulrich_rowe_niu_parsons_2003, title={Bonding and structure of ultrathin yttrium oxide films for Si field effect transistor gate dielectric applications}, volume={21}, ISSN={["1071-1023"]}, url={http://gateway.webofknowledge.com/gateway/Gateway.cgi?GWVersion=2&SrcAuth=ORCID&SrcApp=OrcidOrg&DestLinkType=FullRecord&DestApp=WOS_CPL&KeyUT=WOS:000185080000113&KeyUID=WOS:000185080000113}, DOI={10.1116/1.1593647}, abstractNote={Soft x-ray photoelectron spectroscopy using synchrotron radiation has been employed to study the interface between Y2O3 films and Si(100). Y2O3 films of ∼8, ∼15, and 65 Å were formed by plasma assisted chemical vapor deposition on HF-last Si(100). With this deposition technique, SiO2 forms at the interface and a kinetically limited silicate layer forms between the resulting SiO2 deposited Y2O3. For 65 Å films, the Y 3d5/2 binding energy was between 158.8 and 159.0 eV, 2.2–2.4 eV higher than the reported value of 156.6 eV for Y2O3. For 8 and 15 Å films, the Y 3d5/2 binding energies were 159.6 and 158.9 eV, respectively. The relatively high binding energies are attributed to hydroxide incorporation in the film. For the ultrathin films, ∼10 Å of SiO2 was formed at the interface during or after the deposition. For the 8 Å film, no silicate is detectable whereas for the 15 Å film, an estimated 4 Å of silicate is present between the interfacial SiO2 and Y2O3 overlayer. Because this transition layer does not form in the 8 Å film, it is concluded that the mixing is kinetically limited. For the 8 Å film, the Si 2p3/2 [SiO2] binding energy was 3.65 eV relative to the substrate peak. For the 15 Å deposition, the Si 2p3/2 [SiO2] binding energy was 3.44 eV and the Si 2p3/2 [silicate] binding energy was 2.65 eV relative to the substrate peak.}, number={4}, journal={JOURNAL OF VACUUM SCIENCE & TECHNOLOGY B}, author={Ulrich, MD and Rowe, JE and Niu, D and Parsons, GN}, year={2003}, pages={1792–1797} }
 @article{park_miller_klier_opila_rowe_2003, title={Heteroepitaxial copper phthalocyanine on Au(001) studied by high-resolution X-ray photoelectron spectroscopy}, volume={529}, ISSN={["1879-2758"]}, DOI={10.1016/S0039-6028(03)00274-7}, abstractNote={We report the formation of heteroepitaxial copper phthalocyanine (CuPc) thin film grown on a reconstructed Au(0 0 1) surface and the high-resolution X-ray photoelectron spectroscopy study thereof. The deposition of CuPc onto the “5 × 20” reconstructed Au(0 0 1) surface at room temperature results in a well-ordered CuPc overlayer. The angle-resolved XPS data reveal that adsorbed CuPc is molecular and stoichiometric. The low energy electron diffraction (LEED) further shows that the overlayer is incommensurate to the substrate with its square unit mesh measured approximately 12.7 Å by 12.7 Å along 〈110〉 and 〈11̄0〉 of the substrate. From the combined XPS and LEED data, a model of one flat-lying CuPc molecule per unit cell, which is different from the structures of the well-known α- and β-polymorphs, is proposed.}, number={3}, journal={SURFACE SCIENCE}, author={Park, KT and Miller, A and Klier, K and Opila, RL and Rowe, JE}, year={2003}, month={Apr}, pages={L285–L292} }
 @article{gladys_jackson_rowe_madey_2003, title={High resolution photoemission study of growth, alloying, and intermixing of ultrathin ruthenium films on W(111) and W(211)}, volume={544}, ISSN={["1879-2758"]}, DOI={10.1016/j.susc.2003.06.001}, abstractNote={The alloying, intermixing, growth and faceting of ruthenium overlayers on tungsten single crystals have been studied with high resolution soft X-ray photoelectron spectroscopy, SXPS, (using synchrotron radiation) and low energy electron diffraction (LEED). W4f core-level photoemission spectra and W valence band spectra have been measured at various photon energies, and at normal and grazing emission angles, for W(1 1 1) and W(2 1 1). These two surfaces were chosen for this study because it has been shown previously that W(1 1 1) covered with monolayer films of several different 4d and 5d transition metals develop nanoscale pyramidal facets with (2 1 1) faces, upon annealing. The present work extends the measurement to another catalytically active overlayer metal, Ru. The growth and evolution for dosing and annealing on both W surfaces are investigated for coverages from 0 to greater than 3 monolayers of Ru (1 ML=1.7 × 1015 atoms/cm2). Incremental dosing of Ru causes intermixing of the Ru and W atoms at the interface, even at fractional monolayer coverages. Annealing of surfaces with Ru coverages > 1 ML produces a complex set of SXPS results that indicate the formation of surface Ru/W alloys. Faceting of Ru/W(1 1 1) is observed by LEED for Ru coverages > 1 ML, after annealing at temperatures between 700 and 1000 K. Upon annealing to temperatures higher than 1000 K, the SXPS data indicate that clustering of the Ru–W surface alloys may occur.}, number={2-3}, journal={SURFACE SCIENCE}, author={Gladys, MJ and Jackson, G and Rowe, JE and Madey, TE}, year={2003}, month={Oct}, pages={193–208} }
 @article{ulrich_hong_rowe_lucovsky_chan_madey_2003, title={Soft x-ray photoelectron spectroscopy of (HfO2)(x)(SiO2)(1-x) high-k gate-dielectric structures}, volume={21}, number={4}, journal={Journal of Vacuum Science & Technology. B, Microelectronics and Nanometer Structures}, author={Ulrich, M. D. and Hong, J. G. and Rowe, J. E. and Lucovsky, G. and Chan, A. S. Y. and Madey, T. E.}, year={2003}, pages={1777–1782} }
 @article{block_kolodziej_rowe_madey_schroder_2003, title={Ultrathin PD and PT films on W(211)}, volume={440}, DOI={10.1016/S0040-690(02)01260-9}, number={02-Jan}, journal={Thin Solid Films}, author={Block, J. and Kolodziej, J. J. and Rowe, J. E. and Madey, T. E. and Schroder, E.}, year={2003}, pages={293} }
 @article{ulrich_johnson_hong_rowe_lucovsky_quinton_madey_2002, title={Interface electronic structure of Ta2O5-Al2O3 alloys for Si- field-effect transistor gate dielectric applications}, volume={20}, number={4}, journal={Journal of Vacuum Science & Technology. B, Microelectronics and Nanometer Structures}, author={Ulrich, M. D. and Johnson, R. S. and Hong, J. G. and Rowe, J. E. and Lucovsky, G. and Quinton, J. S. and Madey, T. E.}, year={2002}, pages={1732–1738} }
 @article{kolodziej_madey_keister_rowe_2002, title={Photoelectron spectroscopy studies of growth, thermal stability, and alloying for transition metal-tungsten (111) bimetallic systems}, volume={65}, number={7}, journal={Physical Review. B, Condensed Matter and Materials Physics}, author={Kolodziej, J. J. and Madey, T. E. and Keister, J. W. and Rowe, J. E.}, year={2002}, pages={075413–1} }
 @article{niimi_yang_lucovsky_keister_rowe_2000, title={Barrier layer model determined by XPS data for tunneling current reductions at monolayer nitrided Si-SiO(2) interfaces}, volume={166}, ISSN={["0169-4332"]}, DOI={10.1016/S0169-4332(00)00480-3}, abstractNote={This paper builds on previous work that has demonstrated that interfacial suboxide transition regions at Si–SiO2 interfaces modify tunneling oscillations in the Fowler–Nordheim regime. This paper extends this approach to the direct tunneling regime, emphasizing differences in interfacial transition regions between Si–SiO2 interfaces with and without monolayer level interface nitridation. Tunneling currents in devices with the same oxide-equivalent thickness are reduced by monolayer level interfacial nitrogen with respect to devices without interface nitridation for both substrate and gate injection in both the direct and Fowler–Nordheim tunneling regimes. These decreases have been combined with physically thicker stacked oxide/nitride dielectrics to yield significantly reduced tunneling compared to devices with oxides of the same equivalent oxide thickness, tox-eq; e.g., tunneling currents ∼5×10−3 A/cm2 at 1 V for tox-eq∼1.6 nm have been obtained.}, number={1-4}, journal={APPLIED SURFACE SCIENCE}, author={Niimi, H and Yang, HY and Lucovsky, G and Keister, JW and Rowe, JE}, year={2000}, month={Oct}, pages={485–491} }
 @article{lucovsky_yang_niimi_keister_rowe_thorpe_phillips_2000, title={Intrinsic limitations on device performance and reliability from bond-constraint induced transition regions at interfaces of stacked dielectrics}, volume={18}, number={3}, journal={Journal of Vacuum Science & Technology. B, Microelectronics and Nanometer Structures}, author={Lucovsky, G. and Yang, H. and Niimi, H. and Keister, J. W. and Rowe, J. E. and Thorpe, M. F. and Phillips, J. C.}, year={2000}, pages={1742–1748} }
 @article{kolodziej_madey_keister_rowe_2000, title={Photoelectron spectroscopy studies of growth, alloying, and segregation for transition-metal films on tungsten (211)}, volume={62}, number={8}, journal={Physical Review. B, Condensed Matter and Materials Physics}, author={Kolodziej, J. J. and Madey, T. E. and Keister, J. W. and Rowe, J. E.}, year={2000}, pages={5150–5162} }
 @article{keister_rowe_kolodziej_madey_2000, title={Photoemission spectroscopy of platinum overlayers on silicon dioxide films}, volume={18}, number={4}, journal={Journal of Vacuum Science & Technology. B, Microelectronics and Nanometer Structures}, author={Keister, J. W. and Rowe, J. E. and Kolodziej, J. J. and Madey, T. E.}, year={2000}, pages={2174–2178} }
 @article{lucovsky_wu_niimi_yang_keister_rowe_2000, title={Separate and independent reductions in direct tunneling in oxide/nitride stacks with monolayer interface nitridation associated with the (i) interface nitridation and (ii) increased physical thickness}, volume={18}, ISSN={["0734-2101"]}, DOI={10.1116/1.582318}, abstractNote={Direct tunneling limits aggressive scaling of thermally grown oxides to about 1.6 nm, a thickness at which the tunneling current density Jg at 1 V is ∼1 A/cm2. This article demonstrates that stacked gate dielectrics prepared by remote plasma processing and including (i) ultrathin nitrided SiO2 interfacial layers and (ii) either silicon nitride or oxynitride bulk dielectrics can extend the equivalent oxide thickness to 1.1–1.0 nm before Jg exceeds 1 A/cm2. Significant reductions in direct tunneling are derived from (i) interface nitridation at the monolayer level and (ii) the increased physical thickness of the nitride or oxynitride alloy layers. The “portability” of the interface contribution is demonstrated by combining the nitrided SiO2 interface layers with transition-metal oxides, e.g., Ta2O5, in stacked gate dielectric structures and obtaining essentially the same reductions in tunneling current on n- and p-type substrates with respect to non-nitrided plasma-grown interface layers.}, number={4}, journal={JOURNAL OF VACUUM SCIENCE & TECHNOLOGY A}, author={Lucovsky, G and Wu, Y and Niimi, H and Yang, H and Keister, J and Rowe, JE}, year={2000}, pages={1163–1168} }
 @article{keister_rowe_kolodziej_niimi_madey_lucovsky_1999, title={Band offsets for ultrathin SiO2 and Si3N4 films on Si(111) and Si(100) from photoemission spectroscopy}, volume={17}, number={4}, journal={Journal of Vacuum Science & Technology. B, Microelectronics and Nanometer Structures}, author={Keister, J. W. and Rowe, J. E. and Kolodziej, J. J. and Niimi, H. and Madey, T. E. and Lucovsky, G.}, year={1999}, pages={1831–1835} }
 @article{keister_rowe_kolodziej_niimi_tao_madey_lucovsky_1999, title={Structure of ultrathin SiO2/Si(111) interfaces studied by photoelectron spectroscopy}, volume={17}, ISSN={["1520-8559"]}, DOI={10.1116/1.581805}, abstractNote={Device-grade ultrathin (9–22 Å) films of silicon dioxide, prepared from crystalline silicon by remote-plasma oxidation, are studied by soft x-ray photoelectron spectroscopy (SXPS). The 2p core-level spectra for silicon show evidence of five distinct states of Si, attributable to the five oxidation states of silicon between Si0 (the Si substrate) and Si4+ (the thin SiO2 film). The relative binding energy shifts for peaks Si1+ through Si4+ (with respect to Si0) are in agreement with earlier work. The relatively weaker signals found for the three intermediate states (I1, I2, and I3) are attributed to silicon atoms at the abrupt interface between the thin SiO2 film and substrate. Estimates of the interface state density from these interface signals agree with the values reported earlier of ∼2 monolayers (ML). The position and intensity of the five peaks are measured as a function of post-growth annealing temperature, crystal orientation, and exposure to He/N2 plasma. We find that annealing produces more abrupt interfaces (by reducing the suboxide interface state density), but never more abrupt than ∼1.5 monolayers. We observe a 15%–20% drop in the interface thickness (in particular the “Si2+” peak intensity) with increasing annealing temperature. Somewhat different behavior is observed with small amounts of nitrogen in the SiO2 film where an apparent increase in interface state density is seen. A quantitative analysis is presented which explores the effects of these sample preparation parameters in terms of relative interface state density and modeling of the SXPS data.}, number={4}, journal={JOURNAL OF VACUUM SCIENCE & TECHNOLOGY A}, author={Keister, JW and Rowe, JE and Kolodziej, JJ and Niimi, H and Tao, HS and Madey, TE and Lucovsky, G}, year={1999}, pages={1250–1257} }
 @article{yang_niimi_wu_lucovsky_keister_rowe_1999, title={The effects of interfacial suboxide transition regions on direct tunneling in oxide and stacked oxide-nitride gate dielectrics}, volume={48}, ISSN={["0167-9317"]}, DOI={10.1016/s0167-9317(99)00395-0}, abstractNote={This paper builds on previous work that has demonstrated the effects of interfacial suboxide transition regions at SiSiO2 interfaces on tunneling oscillations in the Fowler-Nordheim regime. This paper extends thes effects to the direct tunneling regime and focuses on differences in interfacial transition regions between SiSiO2 interfaces with, and without monolayer level interface nitridation. Tunneling currents in devices with the same oxide-equivalent thickness are reduced by monolayer level interfacial nitrogen with respect to devices without interface nitridation for i) substrate and gate injection and ii) in both the direct and Fowler-Nordheim tunneling regimes.}, number={1-4}, journal={MICROELECTRONIC ENGINEERING}, author={Yang, H and Niimi, H and Wu, Y and Lucovsky, G and Keister, JW and Rowe, JE}, year={1999}, month={Sep}, pages={307–310} }
 @article{kolodziej_pelhos_abdelrehim_keister_rowe_madey_1998, title={Ultrathin metals films on W(221): Structure, electronic properties and reactivity}, volume={59}, ISSN={["0079-6816"]}, DOI={10.1016/S0079-6816(98)00040-9}, abstractNote={Nanoscale pyramidal facets with (211) faces are formed when W(111) surface is covered by monolayer film of certain metals (including Pt, Pd and Au) and annealed to T ≥ 750 K. In the present work, we focus on the structure, electronic properties and reactivity of planar W(211) covered by ultrathin films of platinum and palladium. The measurements include soft X-ray photoelectron spectroscopy using synchrotron radiation, Auger electron spectroscopy, low energy electron diffraction (LEED) and thermal desorption spectroscopy. The metal film growth and evolution during annealing has been investigated for coverages ranging from 0 to 8 monolayers. The films grow initially in a layer-by-layer mode at 300 K. LEED, Auger, and Surface Core Level Shift (SCLS) measurements reveal that for coverages of one monolayer, the films are stable up to temperatures at which desorption occurs. In contrast, at higher coverages, SCLS data indicate that surface alloys are formed upon annealing films of Pt and Pd; surface alloy formation is not seen for Au overlayers. These findings are discussed in terms of structural and electronic properties of these bimetallic systems. Relevance to catalytic properties for acetylene cyclization over PdW(211) is also discussed.}, number={1-4}, journal={PROGRESS IN SURFACE SCIENCE}, author={Kolodziej, JJ and Pelhos, K and Abdelrehim, IM and Keister, JW and Rowe, JE and Madey, TE}, year={1998}, pages={117–134} }
 @misc{tao_rowe_madey_1998, title={W(111)-based bimetallic systems: Core-level photoelectron spectroscopy studies}, volume={407}, number={1-3}, journal={Surface Science}, author={Tao, H. S. and Rowe, J. E. and Madey, T. E.}, year={1998}, pages={640–646} }