2001 patent
Methods of raising reflow temperature of glass alloys by thermal treatment in steam, and microelectronic structures formed thereby
Washington, DC: U.S. Patent and Trademark Office.
2000 journal article
Deposition and characterization of undoped and boron and phosphorus doped (SixGe1-xO2) glass films
JOURNAL OF THE ELECTROCHEMICAL SOCIETY, 147(4), 1560–1567.
2000 journal article
Planarization processes and applications III. As-deposited and annealed film properties
JOURNAL OF THE ELECTROCHEMICAL SOCIETY, 147(4), 1513–1524.
2000 journal article
Selective area chemical vapor deposition of Si1-xGex thin film alloys by the alternating cyclic method: A thermodynamic analysis I. The system Si-Ge-Cl-H
JOURNAL OF THE ELECTROCHEMICAL SOCIETY, 147(11), 4333–4341.
2000 journal article
Selective area chemical vapor deposition of Si1-xGex thin film alloys by the alternating cyclic method: A thermodynamic analysis II. The system Si-Ge-Cl-H-Ar
JOURNAL OF THE ELECTROCHEMICAL SOCIETY, 147(11), 4342–4344.
2000 journal article
Selective area chemical vapor deposition of Si1-xGex thin film alloys by the alternating cyclic method: Experimental data I. Deposition parameters
JOURNAL OF THE ELECTROCHEMICAL SOCIETY, 147(5), 1847–1853.
2000 journal article
Selective area chemical vapor deposition of Si1-xGex thin film alloys by the alternating cyclic method: Experimental data II. Morphology and composition as a function of deposition parameters
JOURNAL OF THE ELECTROCHEMICAL SOCIETY, 147(5), 1854–1858.
1999 journal article
An alternative derivation for the equilibrium constant of binary solid solution-vapor systems
JOURNAL OF THE ELECTROCHEMICAL SOCIETY, 146(10), 3817–3818.
1999 journal article
Differential thermal analysis of glass mixtures containing SiO2, GeO2, B2O3, and P2O5
JOURNAL OF THE ELECTROCHEMICAL SOCIETY, 146(12), 4569–4579.
1999 journal article
Planarization processes and applications - I. Undoped GeO2-SiO2 glasses
JOURNAL OF THE ELECTROCHEMICAL SOCIETY, 146(10), 3860–3871.
1999 journal article
Planarization processes and applications - II. B2O3/P2O5 doped GeO2-SiO2 classes
JOURNAL OF THE ELECTROCHEMICAL SOCIETY, 146(10), 3872–3885.
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