@misc{croswell_reisman_simpson_temple_williams_2001, title={Methods of raising reflow temperature of glass alloys by thermal treatment in steam, and microelectronic structures formed thereby}, volume={6,271,150}, number={2001 Aug. 7}, publisher={Washington, DC: U.S. Patent and Trademark Office}, author={Croswell, R. T. and Reisman, A. and Simpson, D. L. and Temple, D. and Williams, C. K.}, year={2001} }
 @article{simpson_croswell_reisman_williams_temple_2000, title={Deposition and characterization of undoped and boron and phosphorus doped (SixGe1-xO2) glass films}, volume={147}, ISSN={["0013-4651"]}, DOI={10.1149/1.1393394}, abstractNote={Glass films of undoped and boron and phosphorus doped GeO 2 -SiO 2 glass films were prepared by plasma enhanced chemical vapor deposition using germane, silane, phosphine, diborane, and oxygen as precursor gas sources with argon as a carrier gas. Film synthesis was carried out at 200°C using a dual-coil, inductively coupled plasma system. The presence of silane was not necessary to catalyze the decomposition of germane in the plasma environment as required in a strictly thermal environment. The index of refraction of undoped films changes linearly with SiO 2 composition, and deposition rate was nearly constant across all film compositions. Oxide film composition was determined using energy dispersive X-ray spectroscopy and Auger energy spectroscopy. For undoped films, solid-phase SiO 2 composition varied linearly with silane gas-phase composition. For doped compositions, phosphorus mole fraction in the solid phase was up to a factor of two greater than that present in the gas phase. In contrast to this, the quantity of boron incorporated into the solid phase was a factor of five to six less than present in the gas phase. When both dopants were present in the gas phase, the amount of each incorporated into the solid phase was similar to that in the gas phase.}, number={4}, journal={JOURNAL OF THE ELECTROCHEMICAL SOCIETY}, author={Simpson, DL and Croswell, RT and Reisman, A and Williams, CK and Temple, D}, year={2000}, month={Apr}, pages={1560–1567} }
 @article{croswell_reisman_simpson_temple_williams_2000, title={Planarization processes and applications III. As-deposited and annealed film properties}, volume={147}, ISSN={["1945-7111"]}, DOI={10.1149/1.1393387}, abstractNote={Although germanosilicates with and without boron and phosphorus dopants have been shown to planarize over steps at temperatures below 800°C, other properties of the films, such as water solubility, electrical conductivity, and mechanical stress, are also concerns with these materials. This study examines these film properties for undoped and boron- and/or phosphorus-doped germanosilicate glasses deposited by plasma-enhanced chemical vapor deposition. Water solubility resistance was improved for most film compositions after anneals in argon, steam, forming gas, or two-step anneals in argon and steam or argon and forming gas. Electrical leakage and breakdown behavior was also found to improve in steam anneals and even further in two-step argon-steam anneals but leakage increased following forming gas anneals. Mechanical stress was found to generally increase in magnitude following argon anneals, but stress levels were reduced again to near as-deposited values following a subsequent steam anneal. For the greatest improvement in properties, a two-step anneal, first in argon and subsequently in steam, is recommended.}, number={4}, journal={JOURNAL OF THE ELECTROCHEMICAL SOCIETY}, author={Croswell, RT and Reisman, A and Simpson, DL and Temple, D and Williams, CK}, year={2000}, month={Apr}, pages={1513–1524} }
 @article{soman_reisman_temple_2000, title={Selective area chemical vapor deposition of Si1-xGex thin film alloys by the alternating cyclic method: A thermodynamic analysis I. The system Si-Ge-Cl-H}, volume={147}, ISSN={["0013-4651"]}, DOI={10.1149/1.1394065}, abstractNote={To investigate selective area chemical vapor deposition of thin films by the alternating cyclic (A.C.) process, a thermodynamic analysis has been performed over extensive temperature, pressure, input gas ratio, and deposited solid composition ranges. In the A.C. approach thin film deposition via the hydrogen reduction of and is followed cyclically by etching of spurious nuclei from mask regions via an embedded disproportionation reaction. The embedded disproportionation reaction between , , and the nuclei is made dominant when the hydrogen flow is interrupted cyclically. The thermodynamic calculations have been carried out via the computer program, SOLGASMIX, which is based on the minimization of the system's Gibbs free energy, and also using a first principles approach as an integrity check. These calculations have indicated that selective area deposition of thin films by the A.C. method is feasible. The analysis has also defined the parameter space in which to conduct the selective area deposition using the A.C. process. © 2000 The Electrochemical Society. All rights reserved.}, number={11}, journal={JOURNAL OF THE ELECTROCHEMICAL SOCIETY}, author={Soman, R and Reisman, A and Temple, D}, year={2000}, month={Nov}, pages={4333–4341} }
 @article{soman_reisman_temple_2000, title={Selective area chemical vapor deposition of Si1-xGex thin film alloys by the alternating cyclic method: A thermodynamic analysis II. The system Si-Ge-Cl-H-Ar}, volume={147}, ISSN={["0013-4651"]}, DOI={10.1149/1.1394066}, abstractNote={To investigate selective area chemical vapor deposition of Si 1-x Ge x thin films by the alternating cyclic (A.C.) process, a thermodynamic analysis has been performed over extensive temperature, pressure, input gas ratio, and deposited solid composition ranges. In the A.C. approach Si 1-x Ge x thin film deposition via the hydrogen reduction of SiCl 4 and GeCl 4 is followed cyclically by etching of spurious nuclei from mask regions via an embedded disproportionation reaction. The embedded disproportionation reaction between SiCl 4 , GeCl 4 , and the Si 1-x Ge x nuclei is made dominant when the hydrogen flow is interrupted cyclically. The thermodynamic calculations have been carried out via the computer program, SOLGASMIX, which is based on the minimization of the system's Gibbs free energy, and also using a first principles approach as an integrity check. These calculations have indicated that selective area deposition of Si 1-x Ge x thin films by the A.C method is feasible. The analysis has also defined the parameter space in which to conduct the selective area deposition using the A.C. process.}, number={11}, journal={JOURNAL OF THE ELECTROCHEMICAL SOCIETY}, author={Soman, R and Reisman, A and Temple, D}, year={2000}, month={Nov}, pages={4342–4344} }
 @article{soman_reisman_temple_alberti_2000, title={Selective area chemical vapor deposition of Si1-xGex thin film alloys by the alternating cyclic method: Experimental data I. Deposition parameters}, volume={147}, ISSN={["0013-4651"]}, DOI={10.1149/1.1393445}, abstractNote={Alternating cyclic (AC). selective area deposition of Si 1-x Ge x thin and thick films 0.1 to 3.5 μm, via the reaction of SiCl 4 . GeCl 4 , and H 2 using Ar as a carrier gas, was earned out in a hot-wall, low pressure epitaxial reactor, using oxide masked silicon wafers. The AC process is based on the existence of an embedded disproportionation reaction within the overall deposition chemistry, which provides an effective mechanism for preventing the formation of nuclei in the areas where deposition is not desired. This disproportionation reaction is made dominant cyclically, by pulsing the hydrogen on and off periodically, in order to eliminate incipient nucleation. Experiments were carried out over a large portion of the available parameter space, as determined by extensive thermodynamic analyses, using a reference non-AC process as a control, and comparing the results with different AC frequencies. The [GeCl 4 /(SiCl 4 + GeCl 4 )] mole fractions used were 0.0012, 0.0025, 0.005, 0.01, 0.02, 0.03, and 0.05, the temperature was varied from 700 to 950°C, and the Ar/H 2 ratio varied from 1 to 9. The range of alloy composition deposited was from 0 to 30 mol %, Ge. Total gas flow rate was varied from 2 standard liters per min (slpm) to 20 slpm to modulate gas hydrodynamics. To varying degrees, various experimental conditions influenced the tendency for formation of spurious nuclei on the oxide surface. However, under all conditions, the AC technique was capable of preventing the formation of spurious nuclei on the oxide, guaranteeing essentially 100% selectivity control, for both nonimplanted wafers and ion-implanted wafers.}, number={5}, journal={JOURNAL OF THE ELECTROCHEMICAL SOCIETY}, author={Soman, R and Reisman, A and Temple, D and Alberti, R}, year={2000}, month={May}, pages={1847–1853} }
 @article{soman_reisman_temple_alberti_pace_2000, title={Selective area chemical vapor deposition of Si1-xGex thin film alloys by the alternating cyclic method: Experimental data II. Morphology and composition as a function of deposition parameters}, volume={147}, ISSN={["0013-4651"]}, DOI={10.1149/1.1393446}, abstractNote={Selective area deposition of Si 1-x Ge x thin films, with x as large as 0.63, on oxide masked silicon wafers, was carried out in a hot-wall, low pressure chemical vapor deposition system, using an alternating cyclic method described in the companion paper, Part I. In order to remove any Si 1-x Ge x previously deposited on the walls of the system, an HCl clean of the system was performed prior to every deposition thereby enabling good control over the composition of the deposited Si 1-xGex films. The effect of various processing conditions, such as deposition temperature, input gas phase composition, and deposition time on the resulting Si 1-x Ge x film composition, morphology, and crystalline perfection were studied. For a particular film composition, there exists a morphological thickness, t m at a particular deposition temperature, at which the Si 1-x Ge x films make a transition from smooth to rough morphology. The rough films are in a relaxed state and exhibit three-dimensional growth. Below t m , the films exhibit a smooth morphology. With lowering of deposition temperature while keeping all other conditions constant, the Si 1-x Ge x films become richer in Ge. Thermodynamic calculations were found to be in agreement with this observation. Energy dispersive X-ray spectroscopy using an environmental scanning electron microscope technique was used for composition determination purpose and transmission electron microscopy was performed to study the crystalline quality of the selectively deposited Si 1-x Ge x films.}, number={5}, journal={JOURNAL OF THE ELECTROCHEMICAL SOCIETY}, author={Soman, R and Reisman, A and Temple, D and Alberti, R and Pace, C}, year={2000}, month={May}, pages={1854–1858} }
 @article{soman_reisman_temple_1999, title={An alternative derivation for the equilibrium constant of binary solid solution-vapor systems}, volume={146}, ISSN={["0013-4651"]}, DOI={10.1149/1.1392557}, abstractNote={For an ideal Si-Ge solid solution deposited from an ideal vapor phase in a two phase solid solution-vapor system, the equilibrium constant, K Si SS , for the global process has been derived in terms of the equilibrium constant for the deposition of a pure solid phase, K Si S . and the solid solution mole fraction of silicon species, N Si SS , and has been shown to be K Si SS = K Si S /N Si SS Derivation of the relationship for the germanium species is symmetrical to that for silicon and given by K Ge SS = K Ge S /N Ge SS = K Ge S /(1 - N Si SS ).}, number={10}, journal={JOURNAL OF THE ELECTROCHEMICAL SOCIETY}, author={Soman, R and Reisman, A and Temple, D}, year={1999}, month={Oct}, pages={3817–3818} }
 @article{croswell_reisman_simpson_temple_williams_1999, title={Differential thermal analysis of glass mixtures containing SiO2, GeO2, B2O3, and P2O5}, volume={146}, ISSN={["0013-4651"]}, DOI={10.1149/1.1392676}, abstractNote={The glassy phases of SiO 2 , GeO 2 , B 2 O 3 , and P 2 O 5 as well as selected pseudo-binary, pseudo-ternary, and pseudo-quaternary compositions of these compounds have been examined for glass transitions by differential thermal analysis (DTA) in the context of reflow of doped germanosilicate glasses. SiO 2 does not exhibit a glass transition to temperatures above I 135°C. GeO 2 appears to exhibit a glass transition around 578°C, while B 2 O 3 appears to exhibit a glass transition in the range of 257-268°C. Although the glass transition temperature of P 2 O 5 could not be determined, the transition and melting behavior of the H, O, and O' phases have been reevaluated. Moreover, a new mechanism for conversion from H phase to O phase is presented. Namely, the melting of H H phase followed by the spontaneous recrystallization of the resulting liquid to form the O phase was observed by DTA. Germanosilicate mixtures exhibited no glass transition, but the germanoborates' glass transition temperatures increased linearly with increasing GeO 2 content. Examination of germanoborosilicates indicated that the addition of any germanosilicate composition to B 2 O 3 causes a linear increase in glass transition temperature with total germanosilicate mole fraction, independent of the GeO 2 /SiO 2 mole ratio. Pseudo-binary combinations of P 2 O 5 -B 2 O 3 showed no thermal anomalies on heating or cooling cycles following an initial thermal cycle. However, pseudo-binary combinations of P 2 O 5 -GeO exhibited exotherms on cooling following initial heating cycles, which may indicate the occurrence of crystallizations that might interfere with reflow phenomena Pseudo-quaternary combinations exhibited no thermal anomalies on heating or cooling.}, number={12}, journal={JOURNAL OF THE ELECTROCHEMICAL SOCIETY}, author={Croswell, RT and Reisman, A and Simpson, DL and Temple, D and Williams, CK}, year={1999}, month={Dec}, pages={4569–4579} }
 @article{simpson_croswell_reisman_temple_williams_1999, title={Planarization processes and applications - I. Undoped GeO2-SiO2 glasses}, volume={146}, ISSN={["0013-4651"]}, DOI={10.1149/1.1392565}, abstractNote={The reflow behavior of undoped glass films deposited by plasma enhanced chemical vapor deposition using germane, silane. and oxygen has been studied in several annealing ambient atmospheres. Such films offer the potential for both trench etchrefill and interlevel dielectric applications. Film synthesis was carried out at 200°C using a dual coil inductively coupled plasma system. Oxide film composition was determined using energy dispersive X‐ray spectroscopy and Auger energy spectroscopy. Cross‐sectional scanning electron microscopy has been employed to study the flow behavior of glass films of varying compositions over silicon trenches. Reflow was studied over the temperature range from 600 to 1050°C. The lowest temperature at which complete planarization was observed was 750 and 850°C in steam and inert gas ambient atmospheres, respectively, for films containing approximately 85 mol % . Surprisingly, it was discovered that the steam anneals caused a decrease in the Ge composition of as‐deposited germanosilicate glasses. This offers the potential for establishing a reflow hierarchy, which may have application in the planarization of interlevel dielectrics for ultralarge scale integrated circuits. © 1999 The Electrochemical Society. All rights reserved.}, number={10}, journal={JOURNAL OF THE ELECTROCHEMICAL SOCIETY}, author={Simpson, DL and Croswell, RT and Reisman, A and Temple, D and Williams, CK}, year={1999}, month={Oct}, pages={3860–3871} }
 @article{simpson_croswell_reisman_temple_williams_1999, title={Planarization processes and applications - II. B2O3/P2O5 doped GeO2-SiO2 classes}, volume={146}, ISSN={["0013-4651"]}, DOI={10.1149/1.1392566}, abstractNote={Plasma enhanced chemical vapor deposition of boron and phosphorus doped mixed GeO 2 -SiO 2 glass films in a horizontal tube reactor using germane (GeH 4 ), silane (SiH 4 ), diborane (B 2 H 6 ), phosphine (PH 3 ), and oxygen (O 2 ) has been studied. The glass films offer the potential for both trench refilling and interlevel dielectric applications. Film synthesis was carried out at 200°C using a dual coil inductively coupled plasma system. Oxide film composition was determined using energy dispersive X-ray spectroscopy and Auger energy spectroscopy. Cross-sectional scanning electron microscopy was employed for studing the compositional dependency of the reflow behavior of the mixed GeO 2 -SiO 2 , P 2 O 5 -GeO 2 -SiO 2 , B 2 O 3 -GeO 2 -SiO 2 , and P 2 O 5 -B 2 O 3 -GeO 2 -SiO 2 glass films over silicon trenches under various ambient atmospheres. Reflow experiments were performed at temperatures ranging from 550 to 800°C in various gas ambient atmospheres. As result of the work, a low temperature (∼600°C) reflow process was developed resulting in fully planar dielectric films. This process may have application for planarization of interlevel dielectrics for ultralarge scale integrated circuits.}, number={10}, journal={JOURNAL OF THE ELECTROCHEMICAL SOCIETY}, author={Simpson, DL and Croswell, RT and Reisman, A and Temple, D and Williams, CK}, year={1999}, month={Oct}, pages={3872–3885} }