@article{johnson_yu_brown_koeck_el-masry_kong_edmond_cook_schetzina_1999, title={A critical comparison between MOVPE and MBE growth of III-V nitride semiconductor materials for opto-electronic device applications}, volume={4S1}, DOI={10.1557/s1092578300003100}, abstractNote={A systematic study of the growth and doping of GaN, AlGaN, and InGaN by both molecular beam epitaxy (MBE) and metal-organic vapor phase epitaxy (MOVPE) has been performed. Critical differences between the resulting epitaxy are observed in the p-type doping using magnesium as the acceptor species. MBE growth, using rf-plasma sources to generate the active nitrogen species for growth, has been used for III-Nitride compounds doped either n-type with silicon or p-type with magnesium. Blue and violet light emitting diode (LED) test structures were fabricated. These vertical devices required a relatively high forward current and exhibited high leakage currents. This behavior was attributed to parallel shorting mechanisms along the dislocations in MBE grown layers. For comparison, similar devices were fabricated using a single wafer vertical flow MOVPE reactor and ammonia as the active nitrogen species. MOVPE grown blue LEDs exhibited excellent forward device characteristics and a high reverse breakdown voltage. We feel that the excess hydrogen, which is present on the GaN surface due to the dissociation of ammonia in MOVPE, acts to passivate the dislocations and eliminate parallel shorting for vertical device structures. These findings support the widespread acceptance of MOVPE, rather than MBE, as the epitaxial growth technique of choice for III-V nitride materials used in vertical transport bipolar devices for optoelectronic applications.}, number={G5.10}, journal={MRS Internet Journal of Nitride Semiconductor Research}, author={Johnson, M. A. L. and Yu, Z. H. and Brown, J. D. and Koeck, F. A. and El-Masry, N. A. and Kong, H. S. and Edmond, J. A. and Cook, J. W. and Schetzina, J. F.}, year={1999} }
 @article{muth_brown_johnson_yu_kolbas_cook_schetzina_1999, title={Absorption coefficient and refractive index of GaN, AlN and AlGaN alloys}, volume={4S1}, number={G5.2}, journal={MRS Internet Journal of Nitride Semiconductor Research}, author={Muth, J. F. and Brown, J. D. and Johnson, M. A. L. and Yu, Z. H. and Kolbas, R. M. and Cook, J. W. and Schetzina, J. F.}, year={1999} }
 @article{yu_johnson_brown_el-masry_muth_cook_schetzina_haberern_kong_edmond_1999, title={Epitaxial lateral overgrowth of GaN on SiC and sapphire substrates}, volume={4S1}, DOI={10.1557/s1092578300002878}, abstractNote={The epitaxial lateral overgrowth (ELO) process for GaN has been studied using SiC and sapphire substrates. Both MBE and MOVPE growth processes were employed in the study. The use of SiO2 versus SiNx insulator stripes was investigated using window/stripe widths ranging from 20 μm/4 μm to 3 μm/15 μm. GaN film depositions were completed at temperatures ranging from 800 °C to 1120 °C. Characterization experiments included RHEED, TEM, SEM and cathodolumenescence studies. The MBE growth experiments produced polycrystalline GaN over the insulator stripes even at deposition temperatures as high as 990 °C. In contrast, MOVPE growth produced single-crystal GaN stripes with no observable threading dislocations.}, number={G4.3}, journal={MRS Internet Journal of Nitride Semiconductor Research}, author={Yu, Z. H. and Johnson, M. A. L. and Brown, J. D. and El-Masry, N. A. and Muth, J. F. and Cook, J. W. and Schetzina, J. F. and Haberern, K. W. and Kong, H. S. and Edmond, J. S.}, year={1999} }
 @article{johnson_yu_brown_el-masry_cook_schetzina_1999, title={Scanning electron microscopy and cathodoluminescence study of the epitaxial lateral overgrowth (ELO) process for gallium nitride}, volume={28}, ISSN={["0361-5235"]}, DOI={10.1007/s11664-999-0030-1}, number={3}, journal={JOURNAL OF ELECTRONIC MATERIALS}, author={Johnson, MAL and Yu, ZH and Brown, JD and El-Masry, NA and Cook, JW and Schetzina, JF}, year={1999}, month={Mar}, pages={295–300} }
 @article{brown_yu_matthews_harney_boney_schetzina_benson_dang_terrill_nohava_et al._1999, title={Visible-blind UV digital camera based on a 32 x 32 array of GaN/AlGaN p-i-n photodiodes}, volume={4}, DOI={10.1557/s109257830000065x}, abstractNote={A visible-blind UV camera based on a 32 × 32 array of backside-illuminated GaN/AlGaN p-i-n photodiodes has been successfully demonstrated. Each of the 1024 photodiodes in the array consists of a base n-type layer of AlGaN (~20%) onto which an undoped GaN layer followed by a p-type GaN layer is deposited by metallorganic vapor phase epitaxy. Double-side polished sapphire wafers are used as transparent substrates. Standard photolithographic, etching, and metallization procedures were employed to obtain fully-processed devices. The photodiode array was hybridized to a silicon readout integrated circuit using In bump bonds. Output from the UV camera was recorded at room temperature at a frame rate of 30 Hz. This new type of visible-blind digital camera is sensitive to radiation from 320 nm to 365 nm in the UV spectral region.}, number={9}, journal={MRS Internet Journal of Nitride Semiconductor Research}, author={Brown, J. D. and Yu, Z. H. and Matthews, J. and Harney, S. and Boney, J. and Schetzina, J. F. and Benson, J. D. and Dang, K. W. and Terrill, C. and Nohava, T. and et al.}, year={1999}, pages={1–10} }
 @article{yu_johnson_brown_el-masry_cook_schetzina_1998, title={Study of the epitaxial-lateral-overgrowth (ELO) process for GaN on sapphire}, volume={195}, ISSN={["0022-0248"]}, DOI={10.1016/S0022-0248(98)00638-1}, abstractNote={Growth of GaN by MOVPE on mismatched substrates such as sapphire and SiC produces a columnar material consisting of many hexagonal grains ∼0.2–1.0 μm in diameter. However, the epitaxial–lateral-overgrowth (ELO) process for GaN creates a new material – single-crystal GaN. We have studied the ELO process using a MOVPE reactor featuring vertical gas flows and fast substrate rotation to synthesize GaN ELO samples. Characterization experiments consisted of plan-view scanning electron microscopy and vertical-cross-section transmission electron microscopy studies, which disclosed a large reduction in dislocations in the ELO regions of the GaN samples. Panchromatic and monochromatic cathodoluminescence images and spectra were employed to study the spatial variation of the optical properties of the GaN ELO samples.}, number={1-4}, journal={JOURNAL OF CRYSTAL GROWTH}, author={Yu, ZH and Johnson, MAL and Brown, JD and El-Masry, NA and Cook, JW and Schetzina, JF}, year={1998}, month={Dec}, pages={333–339} }