Orlando Auciello

Method to grow carbon thin films consisting entirely of diamond grains 3-5 nm in size and high-energy grain boundaries

Washington, DC: U.S. Patent and Trademark Office.

Thermionic field emission from nanocrystalline diamond-coated silicon tip arrays

PHYSICAL REVIEW B, 72(16).

N-type droping of nanocrystalline diamond films with nitrogen and electrodes made therefrom

Washington, DC: U.S. Patent and Trademark Office.

Patterning of nanocrystalline diamond films for diamond microstructures useful in MEMS and other devices

Washington, DC: U.S. Patent and Trademark Office.

Ultrananocrystalline diamond cantilever wide dynamic range acceleration/vibration/pressure sensor

Washington, DC: U.S. Patent and Trademark Office.

Field emission from bias-grown diamond thin films in a microwave plasma

Washington, DC: U.S. Patent and Trademark Office.

Ultrananocrystalline diamond cantilever wide dynamic range acceleration/vibration/pressure sensor

Washington, DC: U.S. Patent and Trademark Office.

Epitaxial Pb(Mg1/3Nb2/3)O-3-PbTiO3 thin films grown by MOCVD

Integrated Ferroelectrics, 35(1-4), 1881–1888.

Influence of Pt heterostructure bottom electrodes on SrBi2Ta2O9 thin film properties

APPLIED PHYSICS LETTERS, 76(4), 496–498.

Enhanced field emission from microtip structures

Washington, DC: U.S. Patent and Trademark Office.

Impact of changes in the Pt heterostructure bottom electrodes on the ferroelectric properties of SBT thin films

Integrated Ferroelectrics, 26(1-4), 955–970.

Studies of hydrogen-induced degradation processes in SrBi2Ta2O9 ferroelectric film-based capacitors

APPLIED PHYSICS LETTERS, 74(8), 1162–1164.

Nanoscale scanning force imaging of polarization phenomena in ferroelectric thin films

MRS Bulletin, 23(1), 33–42.

Pulsed laser ablation synthesis and characterization of layered SrBi2Ta2O9 films and integration into capacitors for non-volatile memories

INTEGRATED FERROELECTRICS, Vol. 14, pp. 51–57.

Hybrid metal/metal oxide electrodes for ferroelectric capacitors

Washington, DC: U.S. Patent and Trademark Office.

Pulsed-laser ablation synthesis and characterization of layered pt/srbi2ta2o9/pt ferroelectric capacitors with practically no polarization fatigue

Applied Physics Letters, 67(4), 572–574.

Thin film ferroelectric flat panel display devices, and methods for operating and fabricating same

Washington, DC: U.S. Patent and Trademark Office.

Sputter deposition for multi-component thin films

Washington, DC: U.S. Patent and Trademark Office.