Works (16)

2001 journal article

Ordinary and extraordinary dielectric functions of 4H-and 6H-SiC from 3.5 to 9.0 eV

Applied Physics Letters, 78(18), 2715–2717.

By: O. Lindquist, K. Jarrendahl, S. Peters, J. Zettler, C. Cobet, N. Esser, D. Aspnes, A. Henry, N. Edwards

Source: NC State University Libraries
Added: August 6, 2018

2001 journal article

Time-resolved photoluminescence in strained GaN layers

Physica Status Solidi. A, Applications and Materials Science, 183(1), 151–155.

By: G. Pozina, N. Edwards, J. Bergman, B. Monemar, M. Bremser & R. Davis

Source: NC State University Libraries
Added: August 6, 2018

2001 journal article

Time-resolved spectroscopy of strained GaN/AlN/6H-SiC heterostructures grown by metalorganic chemical vapor deposition

Applied Physics Letters, 78(8), 1062–1064.

By: G. Pozina, N. Edwards, J. Bergman, T. Paskova, B. Monemar, M. Bremser, R. Davis

Source: NC State University Libraries
Added: August 6, 2018

2000 journal article

Optical characterization of wide bandgap semiconductors

Thin Solid Films, 364(1-2), 98–106.

By: N. Edwards, M. Bremser, A. Batchelor, I. Buyanova, L. Madsen, S. Yoo, T. Welhkamp, K. Wilmers ...

Source: NC State University Libraries
Added: August 6, 2018

2000 journal article

Real-time assessment of over layer removal on 4H-SiC surfaces: Techniques and relevance to contact formation

Materials Science Forum, 338(3), 1033–1036.

By: N. Edwards, L. Madsen, K. Robbie, G. Powell, K. Jarrendahl, C. Cobet, N. Esser, W. Richter, D. Aspnes

Source: NC State University Libraries
Added: August 6, 2018

2000 journal article

Real-time assessment of selected surface preparation regimens for 4H-SiC surfaces using spectroscopic ellipsometry

Surface Science, 464(1), L703–707.

By: N. Edwards, K. Jarrendahl, D. Aspnes, K. Robbie, G. Powell, C. Cobet, N. Esser, W. Richter, L. Madsen

Source: NC State University Libraries
Added: August 6, 2018

1999 journal article

Electronic structure of the 0.88-eV luminescence center in electron-irradiated gallium nitride

Physical Review. B, Condensed Matter and Materials Physics, 60(3), 1746–1751.

By: I. Buyanova, M. Wagner, W. Chen, N. Edwards, B. Monemar, J. Lindstrom, M. Bremser, R. Davis, H. Amano, I. Akasaki

Source: NC State University Libraries
Added: August 6, 2018

1999 journal article

Relaxation phenomena in GaN/ AlN/ 6H-SiC heterostructures

MRS Internet Journal of Nitride Semiconductor Research, 4S1(G3.78).

By: N. Edwards, A. Batchelor, I. Buyanova, L. Madsen, M. Bremser, R. Davis, D. Aspnes, B. Monemar

Source: NC State University Libraries
Added: August 6, 2018

1998 journal article

Analysis of optical spectra by Fourier methods

Thin Solid Films, 313(1998 Feb.), 143–148.

By: S. Yoo, N. Edwards & D. Aspnes

Source: NC State University Libraries
Added: August 6, 2018

1998 journal article

Spectroscopic ellipsometry and low-temperature reflectance: complementary analysis of GaN thin films

Thin Solid Films, 313(1998 Feb.), 187–192.

By: N. Edwards, S. Yoo, M. Bremser, M. Horton, N. Perkins, T. Weeks, H. Liu, R. Stall ...

Source: NC State University Libraries
Added: August 6, 2018

1998 journal article

Trends in residual stress for GaN/AlN/6H-SiC heterostructures

Applied Physics Letters, 73(19), 2808–2810.

By: N. Edwards, M. Bremser, R. Davis, A. Batchelor, S. Yoo, C. Karan, D. Aspnes

Source: NC State University Libraries
Added: August 6, 2018

1997 journal article

Growth, doping and characterization of Al(x)Ga(1-x)N thin film alloys on 6H-SiC(0001) substrates

Diamond and Related Materials, 6(2-4), 196–201.

By: M. Bremser, W. Perry, T. Zheleva, N. Edwards, O. Nam, N. Parikh, D. Aspnes, R. Davis

Source: NC State University Libraries
Added: August 6, 2018

1997 conference paper

In-plane optical anisotropies of Al(x)Ga(1-x)N films in their regions of transparency

III-V nitrides: symposium held December 2-6, 1996, Boston, Massachusetts, U.S.A. (Materials Research Society symposia proceedings ; v. 449), 835–840.

By: U. Rossow, N. Edwards, M. Bremser, R. Kern, H. Liu, R. Davis, D. Aspnes

Source: NC State University Libraries
Added: August 6, 2018

1997 journal article

Spectral analysis of above-, below-, and near-bandedge phenomena in GaN thin films

Materials Science & Engineering. B, Solid-State Materials for Advanced Technology, 50(1-3), 134–141.

By: N. Edwards, S. Yoo, M. Bremser, T. Zheleva, M. Horton, N. Perkins, T. Weeks, H. Liu ...

Source: NC State University Libraries
Added: August 6, 2018

1997 journal article

Variation of GaN valence bands with biaxial stress and quantification of residual stress

Applied Physics Letters, 70(1997), 2001.

By: N. Edwards, M. Bremser, T. Weeks, O. Nam, R. Davis, H. Liu, R. Stall, M. Horton ...

Source: NC State University Libraries
Added: August 6, 2018

1997 conference paper

Variation of GaN valence bands with biaxial stress: quantification of residual stress and impact on fundamental band parameters

III-V nitrides: symposium held December 2-6, 1996, Boston, Massachusetts, U.S.A. (Materials Research Society symposia proceedings ; v. 449), 781–786.

By: N. Edwards, S. Yoo, M. Bremser, M. Horton, N. Perkins, T. Weeks, H. Liu, R. Stall ...

Source: NC State University Libraries
Added: August 6, 2018