Works (16)
2001 article
Ordinary and extraordinary dielectric functions of 4H– and 6H–SiC from 3.5 to 9.0 eV
Lindquist, O. P. A., Järrendahl, K., Peters, S., Zettler, J. T., Cobet, C., Esser, N., … Edwards, N. V. (2001, April 30). Applied Physics Letters, Vol. 78, pp. 2715–2717.
2001 journal article
Time-resolved photoluminescence in strained GaN layers
Physica Status Solidi. A, Applications and Materials Science, 183(1), 151–155.
2001 article
Time-resolved spectroscopy of strained GaN/AlN/6H–SiC heterostructures grown by metalorganic chemical vapor deposition
Pozina, G., Edwards, N. V., Bergman, J. P., Paskova, T., Monemar, B., Bremser, M. D., & Davis, R. F. (2001, February 19). Applied Physics Letters.
2000 article
Optical characterization of wide bandgap semiconductors
Edwards, N. V., Bremser, M. D., Batchelor, A. D., Buyanova, I. A., Madsen, L. D., Yoo, S. D., … Monemar, B. (2000, March 1). Thin Solid Films, Vol. 364, pp. 98–106.
2000 article
Real-Time Assessment of Overlayer Removal on 4H-SiC Surfaces: Techniques and Relevance to Contact Formation
Edwards, N. V., Madsen, L. D., Robbie, K., Powell, G. D., Järrendahl, K., Cobet, C., … Aspnes, D. E. (2000, May 10). Materials Science Forum, Vol. 338, pp. 1033–1036.
2000 article
Real-time assessment of selected surface preparation regimens for 4H–SiC surfaces using spectroscopic ellipsometry
Edwards, N. V., Järrendahl, K., Aspnes, D. E., Robbie, K., Powell, G. D., Cobet, C., … Madsen, L. D. (2000, September 1). Surface Science, Vol. 464, pp. L703–707.
1999 journal article
Electronic structure of the 0.88-eV luminescence center in electron-irradiated gallium nitride
Physical Review. B, Condensed Matter and Materials Physics, 60(3), 1746–1751.
1999 article
Relaxation Phenomena in GaN/ AlN/ 6H-SiC Heterostructures
Edwards, N. V., Batchelor, A. D., Buyanova, I. A., Madsen, L. D., Bremser, M. D., Davis, R. F., … Monemar, B. (1999, January 1). MRS Internet Journal of Nitride Semiconductor Research, Vol. 4S1.
open access via www.cambridge.org (publisher PDF)1998 article
Analysis of optical spectra by Fourier methods
Yoo, S. D., Edwards, N. V., & Aspnes, D. E. (1998, February 1). Thin Solid Films, Vol. 313, pp. 143–148.
1998 article
Spectroscopic ellipsometry and low-temperature reflectance: complementary analysis of GaN thin films
Edwards, N. V., Yoo, S. D., Bremser, M. D., Horton, M. N., Perkins, N. R., Weeks, T. W., … Aspnes, D. E. (1998, February 1). Thin Solid Films, Vol. 313, pp. 187–192.
1998 article
Trends in residual stress for GaN/AlN/6H–SiC heterostructures
Edwards, N. V., Bremser, M. D., Davis, R. F., Batchelor, A. D., Yoo, S. D., Karan, C. F., & Aspnes, D. E. (1998, November 9). Applied Physics Letters, Vol. 73, pp. 2808–2810.
1997 article
Growth, doping and characterization of AlxGa1 − xN thin film alloys on 6H-SiC(0001) substrates
Bremser, M. D., Perry, W. G., Zheleva, T., Edwards, N. V., Nam, O. H., Parikh, N., … Davis, R. F. (1997, March 1). Diamond and Related Materials, Vol. 6, pp. 196–201.
1997 article
Spectral analysis of above-, below-, and near-bandedge phenomena in GaN thin films
Edwards, N. V., Yoo, S. D., Bremser, M. D., Zheleva, T., Horton, M. N., Perkins, N. R., … Aspnes, D. E. (1997, December 1). Materials Science and Engineering B, Vol. 50, pp. 134–141.
1997 article
Variation of GaN valence bands with biaxial stress and quantification of residual stress
Edwards, N. V., Yoo, S. D., Bremser, M. D., Weeks, T. W., Nam, O. H., Davis, R. F., … Aspnes, D. E. (1997, April 14). Applied Physics Letters, Vol. 70, p. 2001.
1996 article
In-Plane Optical Anisotropies of AlxGa1-xN films in their Regions of Transparency
Rossow, U., Edwards, N. V., Bremser, M. D., Kern, R. S., Liu, H., Davis, R. F., & Aspnes, D. E. (1996, January 1). MRS Proceedings, pp. 835–840.
Ed(s):
1996 article
Variation of GaN Valence Bands with Biaxial Stress: Quantification of Residual Stress and Impact on Fundamental Band Parameters
Edwards, N. V., Yoo, S. D., Bremser, M. D., Horton, M. N., Perkins, N. R., Weeks, T. W., … Aspnes, D. E. (1996, January 1). MRS Proceedings, pp. 781–786.
Ed(s):