Yun-Chorng Chang

Choi, S. G., Aspnes, D. E., Stoute, N. A., Kim, Y. D., Kim, H. J., Chang, Y.-C., & Palmstrom, C. J. (2008). Dielectric properties of InAsP alloy thin films and evaluation of direct- and reciprocal-space methods of determining critical-point parameters. PHYSICA STATUS SOLIDI A-APPLICATIONS AND MATERIALS SCIENCE, 205(4), 884–887. https://doi.org/10.1002/pssa.200777848

Chang, Y. C., Cai, A. L., Muth, J. F., Kolbas, R. M., Park, M., Cuomo, J. J., … Bumgarner, J. (2003). Optical and structural studies of hydride vapor phase epitaxy grown GaN. JOURNAL OF VACUUM SCIENCE & TECHNOLOGY A, 21(3), 701–705. https://doi.org/10.1116/1.1568346

Chang, Y. C., Cai, A. L., Johnson, M. A. L., Muth, J. F., Kolbas, R. M., Reitmeier, Z. J., … Davis, R. F. (2002). Electron-beam-induced optical memory effects in GaN. APPLIED PHYSICS LETTERS, 80(15), 2675–2677. https://doi.org/10.1063/1.1469222

Park, M., Maria, J. P., Cuomo, J. J., Chang, Y. C., Muth, J. F., Kolbas, R. M., … Bumgarner, J. (2002). X-ray and Raman analyses of GaN produced by ultrahigh-rate magnetron sputter epitaxy. APPLIED PHYSICS LETTERS, 81(10), 1797–1799. https://doi.org/10.1063/1.1506781

Chang, Y. C., Oberhofer, A. E., Muth, J. F., Kolbas, R. M., & Davis, R. F. (2001). Optical metastability of subband gap (2.2 eV) yellow luminescence in GaN. APPLIED PHYSICS LETTERS, 79(3), 281–283. https://doi.org/10.1063/1.1381417

Bergmann, M. J., Ozgur, U., Casey, H. C., Muth, J. F., Chang, Y. C., Kolbas, R. M., … Schurman, M. (1999). Linear optical properties of a heavily Mg-doped Al0.09Ga0.91N epitaxial layer. APPLIED PHYSICS LETTERS, 74(21), 3188–3190. https://doi.org/10.1063/1.124102