Works (4)
Updated: July 5th, 2023 16:02
1999 journal article
Evolution of deep-level centers in p-type silicon following ion implantation at 85 K
APPLIED PHYSICS LETTERS, 74(9), 1263–1265.
UN Sustainable Development Goal Categories
7. Affordable and Clean Energy
(Web of Science)
Source: Web Of Science
Added: August 6, 2018
1999 journal article
In-situ photoexcitation-induced perturbations of defect complex concentration and distribution in silicon implanted with light and heavy ions
Diffusion and Defect Data. [Pt. B], Solid State Phenomena, 70(1999), 397–402.
Source: NC State University Libraries
Added: August 6, 2018
1999 journal article
In-situ studies of point-defect complexes in silicon implanted with heavy MeV ions
Physica. B, Condensed Matter, 274(1999 Dec.), 485–488.
Source: NC State University Libraries
Added: August 6, 2018
1999 journal article
The impact of in situ photoexcitation on the formation of vacancy-type complexes in silicon implanted at 85 and 295 K
APPLIED PHYSICS LETTERS, 75(2), 241–243.
UN Sustainable Development Goal Categories
7. Affordable and Clean Energy
(Web of Science)
Source: Web Of Science
Added: August 6, 2018
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