Chanrae Cho

Evolution of deep-level centers in p-type silicon following ion implantation at 85 K

APPLIED PHYSICS LETTERS, 74(9), 1263–1265.

In-situ photoexcitation-induced perturbations of defect complex concentration and distribution in silicon implanted with light and heavy ions

Diffusion and Defect Data. [Pt. B], Solid State Phenomena, 70(1999), 397–402.

In-situ studies of point-defect complexes in silicon implanted with heavy MeV ions

Physica. B, Condensed Matter, 274(1999 Dec.), 485–488.

The impact of in situ photoexcitation on the formation of vacancy-type complexes in silicon implanted at 85 and 295 K

APPLIED PHYSICS LETTERS, 75(2), 241–243.