Chanrae Cho

Works (4)

Updated: July 5th, 2023 16:02

1999 article

Evolution of deep-level centers in p-type silicon following ion implantation at 85 K

Cho, C. R., Yarykin, N., Brown, R. A., Kononchuk, O., Rozgonyi, G. A., & Zuhr, R. A. (1999, March 1). Applied Physics Letters.

By: C. Cho n, N. Yarykin n, R. Brown n, O. Kononchuk n, G. Rozgonyi n & R. Zuhr*

topics (OpenAlex): Silicon and Solar Cell Technologies; Integrated Circuits and Semiconductor Failure Analysis; Semiconductor materials and devices
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Source: Web Of Science
Added: August 6, 2018

1999 journal article

In-situ photoexcitation-induced perturbations of defect complex concentration and distribution in silicon implanted with light and heavy ions

Diffusion and Defect Data. [Pt. B], Solid State Phenomena, 70(1999), 397–402.

By: N. Yarykin, C. Cho, R. Zuhr & G. Rozgonyi

Source: NC State University Libraries
Added: August 6, 2018

1999 journal article

In-situ studies of point-defect complexes in silicon implanted with heavy MeV ions

Physica. B, Condensed Matter, 274(1999 Dec.), 485–488.

By: N. Yarykin, C. Cho, R. Zuhr & G. Rozgonyi

Source: NC State University Libraries
Added: August 6, 2018

1999 article

The impact ofin situphotoexcitation on the formation of vacancy-type complexes in silicon implanted at 85 and 295 K

Yarykin, N., Cho, C. R., Rozgonyi, G. A., & Zuhr, R. A. (1999, July 12). Applied Physics Letters.

By: N. Yarykin n, C. Cho n, G. Rozgonyi n & R. Zuhr*

topics (OpenAlex): Silicon and Solar Cell Technologies; Integrated Circuits and Semiconductor Failure Analysis; Ion-surface interactions and analysis
UN Sustainable Development Goals Color Wheel
UN Sustainable Development Goal Categories
Source: Web Of Science
Added: August 6, 2018

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