@article{cho_yarykin_brown_kononchuk_rozgonyi_zuhr_1999, title={Evolution of deep-level centers in p-type silicon following ion implantation at 85 K}, volume={74}, ISSN={["0003-6951"]}, DOI={10.1063/1.123519}, abstractNote={In situ deep-level transient spectroscopy measurements have been carried out on p-type silicon following MeV He, Si, and Ge ion implantation at 85 K. Deep levels corresponding to intrinsic and impurity-related point defects are only detected after annealing at temperatures above 200 K. In addition to divacancies, interstitial carbon, and a carbon–oxygen complex, the formation of another defect, denoted as K2, has been observed during annealing at 200–230 K in epitaxial wafers, and at 200–300 K in Czochralski grown material. The energy level of the K2 defect is located 0.36 eV above the valence band, which is very close to a previously observed level of the carbon–oxygen pair. The relative concentration of this defect is ∼10 times higher in samples implanted with Ge than in those implanted with He. Due to its formation temperature, equal concentration in epitaxial and Czochralski grown wafers, and absence in n-type samples, the K2 trap has been tentatively identified as a vacancy-related complex which probably contains boron.}, number={9}, journal={APPLIED PHYSICS LETTERS}, author={Cho, CR and Yarykin, N and Brown, RA and Kononchuk, O and Rozgonyi, GA and Zuhr, RA}, year={1999}, month={Mar}, pages={1263–1265} }
 @article{yarykin_cho_zuhr_rozgonyi_1999, title={In-situ photoexcitation-induced perturbations of defect complex concentration and distribution in silicon implanted with light and heavy ions}, volume={70}, number={1999}, journal={Diffusion and Defect Data. [Pt. B], Solid State Phenomena}, author={Yarykin, N. and Cho, C. R. and Zuhr, R. A. and Rozgonyi, G. A.}, year={1999}, pages={397–402} }
 @article{yarykin_cho_zuhr_rozgonyi_1999, title={In-situ studies of point-defect complexes in silicon implanted with heavy MeV ions}, volume={274}, number={1999 Dec.}, journal={Physica. B, Condensed Matter}, author={Yarykin, N. and Cho, C. R. and Zuhr, R. and Rozgonyi, G.}, year={1999}, pages={485–488} }
 @article{yarykin_cho_rozgonyi_zuhr_1999, title={The impact of in situ photoexcitation on the formation of vacancy-type complexes in silicon implanted at 85 and 295 K}, volume={75}, ISSN={["1077-3118"]}, DOI={10.1063/1.124335}, abstractNote={Photoexcitation of silicon during low-fluence implantation with MeV Si and Ge ions is observed to suppress vacancy-type point-defect formation, as determined by in situ deep-level transient spectroscopy. The A-center formation after low-temperature implantation is extended over a wide temperature interval indicating that electrically inactive clusters, which emit vacancies during annealing, are formed in the end-of-range region during implantation at 85 K. The number of vacancies stored in these clusters is influenced by low-temperature in situ photoexcitation.}, number={2}, journal={APPLIED PHYSICS LETTERS}, author={Yarykin, N and Cho, CR and Rozgonyi, GA and Zuhr, RA}, year={1999}, month={Jul}, pages={241–243} }