@article{cho_yarykin_brown_kononchuk_rozgonyi_zuhr_1999, title={Evolution of deep-level centers in p-type silicon following ion implantation at 85 K}, volume={74}, ISSN={["0003-6951"]}, DOI={10.1063/1.123519}, abstractNote={Views Icon Views Article contents Figures & tables Video Audio Supplementary Data Peer Review Share Icon Share Twitter Facebook Reddit LinkedIn Tools Icon Tools Reprints and Permissions Cite Icon Cite Search Site Citation C. R. Cho, N. Yarykin, R. A. Brown, O. Kononchuk, G. A. Rozgonyi, R. A. Zuhr; Evolution of deep-level centers in p-type silicon following ion implantation at 85 K. Appl. Phys. Lett. 1 March 1999; 74 (9): 1263–1265. https://doi.org/10.1063/1.123519 Download citation file: Ris (Zotero) Reference Manager EasyBib Bookends Mendeley Papers EndNote RefWorks BibTex toolbar search Search Dropdown Menu toolbar search search input Search input auto suggest filter your search All ContentAIP Publishing PortfolioApplied Physics Letters Search Advanced Search |Citation Search}, number={9}, journal={APPLIED PHYSICS LETTERS}, author={Cho, CR and Yarykin, N and Brown, RA and Kononchuk, O and Rozgonyi, GA and Zuhr, RA}, year={1999}, month={Mar}, pages={1263–1265} }
 @article{yarykin_cho_zuhr_rozgonyi_1999, title={In-situ photoexcitation-induced perturbations of defect complex concentration and distribution in silicon implanted with light and heavy ions}, volume={70}, number={1999}, journal={Diffusion and Defect Data. [Pt. B], Solid State Phenomena}, author={Yarykin, N. and Cho, C. R. and Zuhr, R. A. and Rozgonyi, G. A.}, year={1999}, pages={397–402} }
 @article{yarykin_cho_zuhr_rozgonyi_1999, title={In-situ studies of point-defect complexes in silicon implanted with heavy MeV ions}, volume={274}, number={1999 Dec.}, journal={Physica. B, Condensed Matter}, author={Yarykin, N. and Cho, C. R. and Zuhr, R. and Rozgonyi, G.}, year={1999}, pages={485–488} }
 @article{yarykin_cho_rozgonyi_zuhr_1999, title={The impact of in situ photoexcitation on the formation of vacancy-type complexes in silicon implanted at 85 and 295 K}, volume={75}, ISSN={["1077-3118"]}, DOI={10.1063/1.124335}, abstractNote={Photoexcitation of silicon during low-fluence implantation with MeV Si and Ge ions is observed to suppress vacancy-type point-defect formation, as determined by in situ deep-level transient spectroscopy. The A-center formation after low-temperature implantation is extended over a wide temperature interval indicating that electrically inactive clusters, which emit vacancies during annealing, are formed in the end-of-range region during implantation at 85 K. The number of vacancies stored in these clusters is influenced by low-temperature in situ photoexcitation.}, number={2}, journal={APPLIED PHYSICS LETTERS}, author={Yarykin, N and Cho, CR and Rozgonyi, GA and Zuhr, RA}, year={1999}, month={Jul}, pages={241–243} }