2000 journal article
Influence of annealing conditions on dopant activation of Si+ and Mg+ implanted GaN
Materials Science Forum, 338(3), 1615–1618.
By: A. Suvkhanov, N. Parikh, I. Usov, J. Hunn, S. Withrow, D. Thomson, T. Gehrke, R. Davis, L. Krasnobaev
1998 journal article
Fine structure of near-band-edge photoluminescence in He+-irradiated GaN grown on SiC
APPLIED PHYSICS LETTERS, 72(22), 2838–2840.
By: V. Joshkin*, C. Parker n, S. Bedair n, L. Krasnobaev n, J. Cuomo n, R. Davis n, A. Suvkhanov*
1997 journal article
Harnessing reverse annealing phenomenon for shallow p-n junction formation
JOURNAL OF APPLIED PHYSICS, 82(10), 5185–5190.
By: L. Krasnobaev n, J. Cuomo n & O. Vyletalina*
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