Works (3)

2000 journal article

Influence of annealing conditions on dopant activation of Si+ and Mg+ implanted GaN

Materials Science Forum, 338(3), 1615–1618.

By: A. Suvkhanov, N. Parikh, I. Usov, J. Hunn, S. Withrow, D. Thomson, T. Gehrke, R. Davis, L. Krasnobaev

Source: NC State University Libraries
Added: August 6, 2018

1998 journal article

Fine structure of near-band-edge photoluminescence in He+-irradiated GaN grown on SiC

APPLIED PHYSICS LETTERS, 72(22), 2838–2840.

By: V. Joshkin, C. Parker, S. Bedair, L. Krasnobaev, J. Cuomo, R. Davis, A. Suvkhanov

Source: Web Of Science
Added: August 6, 2018

1997 journal article

Harnessing reverse annealing phenomenon for shallow p-n junction formation

JOURNAL OF APPLIED PHYSICS, 82(10), 5185–5190.

By: L. Krasnobaev, J. Cuomo & O. Vyletalina

Source: Web Of Science
Added: August 6, 2018