Leonid Y. Krasnobaev

Works (3)

Updated: July 5th, 2023 16:04

2000 journal article

Influence of annealing conditions on dopant activation of Si+ and Mg+ implanted GaN

Materials Science Forum, 338(3), 1615–1618.

By: A. Suvkhanov, N. Parikh, I. Usov, J. Hunn, S. Withrow, D. Thomson, T. Gehrke, R. Davis, L. Krasnobaev

Source: NC State University Libraries
Added: August 6, 2018

1998 article

Fine structure of near-band-edge photoluminescence in He+-irradiated GaN grown on SiC

Joshkin, V. A., Parker, C. A., Bedair, S. M., Krasnobaev, L. Y., Cuomo, J. J., Davis, R. F., & Suvkhanov, A. (1998, June 1). Applied Physics Letters.

By: V. Joshkin*, C. Parker n, S. Bedair n, L. Krasnobaev n, J. Cuomo n, R. Davis n, A. Suvkhanov*

topics (OpenAlex): GaN-based semiconductor devices and materials; Silicon Carbide Semiconductor Technologies; Semiconductor materials and devices
Source: Web Of Science
Added: August 6, 2018

1997 article

Harnessing reverse annealing phenomenon for shallow p-n junction formation

Krasnobaev, L. Y., Cuomo, J. J., & Vyletalina, O. I. (1997, November 15). Journal of Applied Physics.

By: L. Krasnobaev n, J. Cuomo n & O. Vyletalina*

topics (OpenAlex): Silicon and Solar Cell Technologies; Semiconductor materials and devices; Semiconductor materials and interfaces
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Source: Web Of Science
Added: August 6, 2018

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