Works (3)

Updated: July 5th, 2023 16:04

2000 journal article

Influence of annealing conditions on dopant activation of Si+ and Mg+ implanted GaN

Materials Science Forum, 338(3), 1615–1618.

By: A. Suvkhanov, N. Parikh, I. Usov, J. Hunn, S. Withrow, D. Thomson, T. Gehrke, R. Davis, L. Krasnobaev

Source: NC State University Libraries
Added: August 6, 2018

1998 journal article

Fine structure of near-band-edge photoluminescence in He+-irradiated GaN grown on SiC

APPLIED PHYSICS LETTERS, 72(22), 2838–2840.

By: V. Joshkin*, C. Parker n, S. Bedair n, L. Krasnobaev n, J. Cuomo n, R. Davis n, A. Suvkhanov*

Source: Web Of Science
Added: August 6, 2018

1997 journal article

Harnessing reverse annealing phenomenon for shallow p-n junction formation

JOURNAL OF APPLIED PHYSICS, 82(10), 5185–5190.

By: L. Krasnobaev n, J. Cuomo n & O. Vyletalina*

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Source: Web Of Science
Added: August 6, 2018

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