@article{ward_nam_hartman_english_mccarson_schlesser_sitar_davis_nemanich_1998, title={Electron emission characteristics of GaN pyramid arrays grown via organometallic vapor phase epitaxy}, volume={84}, ISSN={["0021-8979"]}, DOI={10.1063/1.368775}, abstractNote={Selective growth of arrays of silicon-doped GaN (Si:GaN) pyramids for field emitter applications has been achieved. The electron emission characteristics of these arrays has been measured using techniques such as field emission, field emission energy distribution analysis (FEED), photoemission electron microscopy (PEEM), and field emission electron microscopy (FEEM). The field emission current–voltage (I–V) results indicate an average threshold field as low as 7 V/μm for an emission current of 10 nA. It is suggested that the low threshold field value is a consequence of both the low work function of Si:GaN and the field enhancement of the pyramids. The results of the FEEM and FEED measurements indicate agreement with the field emission I–V characteristics. The FEED results indicate that the Si:GaN pyramids are conducting, and that no significant ohmic losses are present between the top contact to the array and the field emitting pyramids. The PEEM and FEEM images show that the emission from the arrays is uniform over a 150 μm field of view.}, number={9}, journal={JOURNAL OF APPLIED PHYSICS}, author={Ward, BL and Nam, OH and Hartman, JD and English, SL and McCarson, BL and Schlesser, R and Sitar, Z and Davis, RF and Nemanich, RJ}, year={1998}, month={Nov}, pages={5238–5242} }
 @article{mccarson_schlesser_mcclure_sitar_1998, title={Electron emission mechanism from cubic boron nitride-coated molybdenum emitters}, volume={72}, ISSN={["0003-6951"]}, DOI={10.1063/1.121492}, abstractNote={The energy distribution of field-emitted electrons from Mo tips coated with intrinsic cubic boron nitride (c-BN) was studied in an effort to determine the origin of the emitted electrons. Voltage-dependent field-emission energy distribution (V-FEED) spectra were collected from the Mo emitters under ultra-high-vacuum conditions both before and after being coated. Emission current at a given voltage increased by as much as two orders of magnitude for the c-BN-coated emitters relative to bare emitters. The energy of field-emitted electrons from the c-BN-coated emitters was linearly dependent upon the applied voltage. Extrapolation of V-FEED data from c-BN-coated emitters to the flatband condition evidenced that the electrons were emitted from the conduction-band minimum of the c-BN coating at the c-BN/vacuum interface.}, number={22}, journal={APPLIED PHYSICS LETTERS}, author={McCarson, BL and Schlesser, R and McClure, MT and Sitar, Z}, year={1998}, month={Jun}, pages={2909–2911} }
 @article{mccarson_schlesser_sitar_1998, title={Field emission energy distribution analysis of cubic-BN-coated Mo emitters: Nonlinear behavior}, volume={84}, ISSN={["1089-7550"]}, DOI={10.1063/1.368496}, abstractNote={Voltage-dependent field emission energy distribution (V-FEED) and current versus voltage measurements were performed on Mo tips coated with intrinsic cubic boron nitride (c-BN) to determine the origin of the field-emitted electrons. Spectra were collected from the Mo emitters under ultrahigh vacuum conditions both before and after being coated. In some instances multiple FEED peaks were observed in the collected spectra. These corresponded to multiple emission sites on the emitter. The energy of the field-emitted electrons from the c-BN-coated emitters usually depended linearly upon the applied voltage and could be explained using a simplified band-bending model. However, at higher voltages the FEED measured from the c-BN-coated emitters departed from this linear behavior. These nonlinearities were attributed to a contact resistance at the Mo/c-BN interface which had a greater influence on the energy distribution of emitted electrons at larger emission currents.}, number={6}, journal={JOURNAL OF APPLIED PHYSICS}, author={McCarson, BL and Schlesser, R and Sitar, Z}, year={1998}, month={Sep}, pages={3382–3385} }
 @article{schlesser_mccarson_mcclure_sitar_1998, title={Field emission energy distribution analysis of wide-band-gap field emitters}, volume={16}, number={2}, journal={Journal of Vacuum Science & Technology. B, Microelectronics and Nanometer Structures}, author={Schlesser, R. and McCarson, B. L. and McClure, M. T. and Sitar, Z.}, year={1998}, pages={689–692} }
 @article{schlesser_mcclure_mccarson_sitar_1998, title={Mechanisms of field emission from diamond coated Mo emitters}, volume={7}, ISSN={["0925-9635"]}, DOI={10.1016/S0925-9635(97)00290-2}, abstractNote={A combination of field emission energy distribution (FEED) and I–V measurements was used to study the field emission mechanisms of tip-shaped molybdenum emitters electrophoretically coated with nominally intrinsic diamond powders. Field-induced band bending was studied as a function of applied voltage and was interpreted in terms of a two-barrier model. Field emitted electrons originated from the conduction band minimum of diamond. Electron injection at the Mo/diamond interface was identified as the dominant field emission current limiting factor. It was concluded that potential negative electron affinity (NEA) properties of diamond did not contribute to a current enhancement. The latter statement was confirmed by the observation that graphite coatings enhanced emission currents in a similar way to diamond coatings.}, number={2-5}, journal={DIAMOND AND RELATED MATERIALS}, author={Schlesser, R and McClure, MT and McCarson, BL and Sitar, Z}, year={1998}, month={Feb}, pages={636–639} }
 @article{ronning_banks_mccarson_schlesser_sitar_davis_ward_nemanich_1998, title={Structural and electronic properties of boron nitride thin films containing silicon}, volume={84}, ISSN={["0021-8979"]}, DOI={10.1063/1.368752}, abstractNote={The incorporation of silicon into boron nitride films (BN:Si) has been achieved during ion beam assisted deposition growth. A gradual change from cubic boron nitride (c-BN) to hexagonal boron nitride (h-BN) was observed with increasing silicon concentration. Ultraviolet photoelectron spectroscopy, field emission, and field emission electron energy distribution experiments indicated that the observed electron transport and emission were due to hopping conduction between localized states in a band at the Fermi level for the undoped c-BN films and at the band tails of the valence band maximum for the BN:Si films. A negative electron affinity was observed for undoped c-BN films; this phenomenon disappeared upon silicon doping due to the transformation to h-BN. No shift of the Fermi level was observed in any BN:Si film; thus, n-type doping can be excluded.}, number={9}, journal={JOURNAL OF APPLIED PHYSICS}, author={Ronning, C and Banks, AD and McCarson, BL and Schlesser, R and Sitar, Z and Davis, RF and Ward, BL and Nemanich, RJ}, year={1998}, month={Nov}, pages={5046–5051} }
 @article{fitzgerald_1997, title={Profiles in collaboration - profile 2: entrepreneur trainers}, volume={6}, number={5}, journal={ASEE Prism}, author={Fitzgerald, N.}, year={1997}, pages={24} }