Rohini Raghunathan

Raghunathan, R., & Baliga, B. J. (1999). Temperature dependence of hole impact ionization coefficients in 4H and 6H-SiC. SOLID-STATE ELECTRONICS, 43(2), 199–211. https://doi.org/10.1016/S0038-1101(98)00248-2

Raghunathan, R., & Baliga, B. J. (1998). P-type 4H and 6H-SiC high-voltage Schottky barrier diodes. IEEE ELECTRON DEVICE LETTERS, 19(3), 71–73. https://doi.org/10.1109/55.661168

Raghunathan, R., & Baliga, B. J. (1998). Role of defects in producing negative temperature dependence of breakdown voltage in SiC. APPLIED PHYSICS LETTERS, 72(24), 3196–3198. https://doi.org/10.1063/1.121591