Waeil Muhammed Al-Anwar Ashmawi Rajendran, A. M., Ashmawi, W. M., & Zikry, M. A. (2006). The modeling of the shock response of powdered ceramic materials. COMPUTATIONAL MECHANICS, 38(1), 1–13. https://doi.org/10.1007/s00466-005-0712-3 Ashmawi, W. M., Zikry, M. A., Wang, K., & Reeber, R. R. (2004). Modeling of residual stresses for thermally strained GaN/Al2O3 heterostructures. JOURNAL OF CRYSTAL GROWTH, 266(4), 415–422. https://doi.org/10.1016/j.jcrysgro.2004.02.105 Ashmawi, W. M., & Zikry, M. A. (2003). Grain boundary effects and void porosity evolution. MECHANICS OF MATERIALS, Vol. 35, pp. 537–552. https://doi.org/10.1016/S0167-6636(02)00269-7 Ashmawi, W. M., & Zikry, M. A. (2003). Grain-boundary interfaces and void interactions in porous aggregates. PHILOSOPHICAL MAGAZINE, Vol. 83, pp. 3917–3944. https://doi.org/10.1080/14786430310001599423 Ashmawi, W. M., & Zikry, M. A. (2003). Single void morphological and grain-boundary effects on overall failure in FCC polycrystalline systems. MATERIALS SCIENCE AND ENGINEERING A-STRUCTURAL MATERIALS PROPERTIES MICROSTRUCTURE AND PROCESSING, 343(1-2), 126–142. https://doi.org/10.1016/s0921-5093(02)00325-8 Ashmawi, W. M., & Zikry, M. A. (2002). Prediction of grain-boundary interfacial mechanisms in polycrystalline materials. JOURNAL OF ENGINEERING MATERIALS AND TECHNOLOGY-TRANSACTIONS OF THE ASME, 124(1), 88–96. https://doi.org/10.1115/1.1421611 Zheleva, T. S., Nam, O. H., Ashmawi, W. M., Griffin, J. D., & Davis, R. F. (2001). Lateral epitaxy and dislocation density reduction in selectively grown GaN structures. JOURNAL OF CRYSTAL GROWTH, 222(4), 706–718. https://doi.org/10.1016/S0022-0248(00)00832-0 Ashmawi, W. M., & Zikry, M. A. (2000). Effects of grain boundaries and dislocation density evolution on large strain deformation modes in fcc crystalline materials. JOURNAL OF COMPUTER-AIDED MATERIALS DESIGN, 7(1), 55–62. https://doi.org/10.1023/A:1008717428264 Zheleva, T. S., Ashmawi, W. M., & Jones, K. A. (1999). Pendeo-epitaxy versus lateral epitaxial overgrowth of GaN: A comparative study via finite element analysis. Physica Status Solidi. A, Applications and Materials Science, 176(1), 545–551. Zheleva, T. S., Smith, S. A., Thomson, D. B., Gehrke, T., Linthicum, K. J., Rajagopal, P., … Davis, R. F. (1999). Pendeo-epitaxy: A new approach for lateral growth of gallium nitride structures. MRS Internet Journal of Nitride Semiconductor Research, 4S1(G3.38). Zheleva, T. S., Ashmawi, W. M., Nam, O. H., & Davis, R. F. (1999). Thermal mismatch stress relaxation via lateral epitaxy in selectively grown GaN structures. APPLIED PHYSICS LETTERS, 74(17), 2492–2494. https://doi.org/10.1063/1.123017