@article{mcginnis_thomson_banks_preble_davis_lamb_2003, title={Supersonic jet epitaxy of gallium nitride using triethylgallium and ammonia}, volume={21}, ISSN={["0734-2101"]}, DOI={10.1116/1.1532736}, abstractNote={Gallium nitride (GaN) films were grown on GaN(0001)/AlN/6H–SiC composite substrates at 700–780 °C by supersonic jet epitaxy using triethylgallium (TEG) and NH3. TEG was seeded in He and N2 supersonic free jets to obtain kinetic energies of ∼2.1 and ∼0.5 eV, respectively, and NH3 was supplied from a variable leak valve. Higher TEG beam intensities (by about a factor of 5) were obtained by seeding in He. In situ reflection high-energy electron diffraction indicated a transition from three-dimensional to two-dimensional (2D) growth between 730 and 750 °C for films grown using TEG seeded in He and a constant NH3/TEG flux ratio. Ex situ atomic force microscopy of films grown at 730 and 750 °C revealed smooth surfaces comprised of quasi-2D islands with irregular perimeters. Cross-sectional transmission electron microscopy evidenced that the film grown at 750 °C was homoepitaxial α-GaN with a high density of planar lattice defects. Secondary ion mass spectrometry detected high residual carbon concentrations in the films. The GaN growth rate at 750 °C was found to depend on TEG flux and NH3 pressure in a manner consistent with Langmuir–Hinshelwood kinetics. Films grown under NH3-rich conditions were faceted and microscopically rough, whereas nonfaceted, basal-plane growth was observed under Ga-rich conditions. The first-order dependence of growth rate on TEG flux under NH3-rich conditions was used to estimate Ga incorporation efficiencies for high- and low-energy TEG beams. The Ga incorporation efficiency is lower for high-energy TEG beams, consistent with a decrease in the sticking coefficient for dissociative chemisorption.}, number={1}, journal={JOURNAL OF VACUUM SCIENCE & TECHNOLOGY A}, author={McGinnis, AJ and Thomson, D and Banks, A and Preble, E and Davis, RF and Lamb, HH}, year={2003}, pages={294–301} }
 @article{hanser_banks_davis_jahnen_albrecht_dorsch_christiansen_strunk_2000, title={Growth and microstructure of InxGa1-xN films grown on SiC substrates via low pressure metalorganic vapor phase epitaxy}, volume={3}, ISSN={["1873-4081"]}, DOI={10.1016/S1369-8001(99)00023-2}, abstractNote={Abstract The growth and microstructures of InxGa1−xN films (x≤0.23) grown on α(6H)–SiC(0001) wafer/AIN buffer layer/GaN heterostructures by low pressure metalorganic vapor phase epitaxy have been investigated. The system deposition pressure limited the InN content in these films. The maximum InN contents achievable at the deposition pressures of 45 and 90 torr were ∼13 and ∼23%, respectively. Kinetic phenomena based on the rates of adsorption and desorption of the In growth species off the growth surface are presented to explain the film composition dependence on the system pressure. The surface morphologies and microstructures of the InxGa1−xN films were analyzed using several techniques, and the formation of pinhole defects in the films was investigated. Most of the pinhole defects were associated with threading dislocations with a c-component Burgers vector. Edge-type dislocations were never observed to terminate in pinholes in the samples observed here. Indium segregation to areas around the defect areas was observed, as was an In compositional gradient in the growth direction. Based on experimental observations, the strain field around dislocations with a c-component Burgers vector could result in the increase of In atoms at the dislocation sites in the film, which result in a change to the local growth mode of the film and causes the pinhole defects to form.}, number={3}, journal={MATERIALS SCIENCE IN SEMICONDUCTOR PROCESSING}, author={Hanser, AD and Banks, AD and Davis, RF and Jahnen, B and Albrecht, M and Dorsch, W and Christiansen, S and Strunk, HP}, year={2000}, month={Jun}, pages={163–171} }
 @article{smith_lampert_rajagopal_banks_thomson_davis_2000, title={Selective etching of GaN over AlN using an inductively coupled plasma and an O-2/Cl-2/Ar chemistry}, volume={18}, ISSN={["1520-8559"]}, DOI={10.1116/1.582270}, abstractNote={An alternative method for achieving etching selectivity between GaN and AlN has been demonstrated. The etch rate of AlN was significantly decreased by the addition of a low concentration of O2 to a Cl2–Ar mixture in an inductively coupled plasma (ICP) etching system. The etch rate of GaN in the O2-containing plasma was approximately 15% less than the plasma without the O2 for the same parameters. The pressure and the ICP power were varied to achieve a maximum selectivity of 48 at a pressure of 10 mTorr, a direct current bias of −150 V, and an ICP power of 500 W. The etch rates of GaN and AlN at these parameters were 4800 and 100 Å/min, respectively.}, number={3}, journal={JOURNAL OF VACUUM SCIENCE & TECHNOLOGY A}, author={Smith, SA and Lampert, WV and Rajagopal, P and Banks, AD and Thomson, D and Davis, RF}, year={2000}, pages={879–881} }
 @article{hanser_wolden_perry_zheleva_carlson_banks_therrien_davis_1998, title={Analysis of reactor geometry and diluent gas flow effects on the metalorganic vapor phase epitaxy of AlN and GaN thin films on alpha(6H)-SiC substrates}, volume={27}, ISSN={["0361-5235"]}, DOI={10.1007/s11664-998-0394-7}, number={4}, journal={JOURNAL OF ELECTRONIC MATERIALS}, author={Hanser, AD and Wolden, CA and Perry, WG and Zheleva, T and Carlson, EP and Banks, AD and Therrien, RJ and Davis, RF}, year={1998}, month={Apr}, pages={238–245} }
 @misc{roberson_finello_banks_davis_1998, title={Growth of Fe3N films via chemical vapor deposition of iron acetylacetonate and anhydrous ammonia}, volume={326}, number={1-2}, journal={Thin Solid Films}, author={Roberson, S. L. and Finello, D. and Banks, A. D. and Davis, R. F.}, year={1998}, pages={47–50} }
 @article{ronning_banks_mccarson_schlesser_sitar_davis_ward_nemanich_1998, title={Structural and electronic properties of boron nitride thin films containing silicon}, volume={84}, ISSN={["0021-8979"]}, DOI={10.1063/1.368752}, abstractNote={The incorporation of silicon into boron nitride films (BN:Si) has been achieved during ion beam assisted deposition growth. A gradual change from cubic boron nitride (c-BN) to hexagonal boron nitride (h-BN) was observed with increasing silicon concentration. Ultraviolet photoelectron spectroscopy, field emission, and field emission electron energy distribution experiments indicated that the observed electron transport and emission were due to hopping conduction between localized states in a band at the Fermi level for the undoped c-BN films and at the band tails of the valence band maximum for the BN:Si films. A negative electron affinity was observed for undoped c-BN films; this phenomenon disappeared upon silicon doping due to the transformation to h-BN. No shift of the Fermi level was observed in any BN:Si film; thus, n-type doping can be excluded.}, number={9}, journal={JOURNAL OF APPLIED PHYSICS}, author={Ronning, C and Banks, AD and McCarson, BL and Schlesser, R and Sitar, Z and Davis, RF and Ward, BL and Nemanich, RJ}, year={1998}, month={Nov}, pages={5046–5051} }