@article{mcginnis_thomson_banks_preble_davis_lamb_2003, title={Supersonic jet epitaxy of gallium nitride using triethylgallium and ammonia}, volume={21}, DOI={10.1116/1.1532736}, number={1}, journal={Journal of Vacuum Science & Technology. A, Vacuum, Surfaces, and Films}, author={McGinnis, A. J. and Thomson, D. and Banks, A. and Preble, E. and Davis, R. F. and Lamb, H. H.}, year={2003}, pages={294–301} } @article{hanser_banks_davis_jahnen_albrecht_dorsch_christiansen_strunk_2000, title={Growth and microstructure of InxGa1-xN films grown on SiC substrates via low pressure metalorganic vapor phase epitaxy}, volume={3}, DOI={10.1016/S1369-8001(99)00023-2}, number={3}, journal={Materials Science in Semiconductor Processing}, author={Hanser, A. D. and Banks, A. D. and Davis, R. F. and Jahnen, B. and Albrecht, M. and Dorsch, W. and Christiansen, S. and Strunk, H. P.}, year={2000}, pages={163–171} } @article{smith_lampert_rajagopal_banks_thomson_davis_2000, title={Selective etching of GaN over AlN using an inductively coupled plasma and an O-2/Cl-2/Ar chemistry}, volume={18}, DOI={10.1116/1.582270}, number={3}, journal={Journal of Vacuum Science & Technology. A, Vacuum, Surfaces, and Films}, author={Smith, S. A. and Lampert, W. V. and Rajagopal, P. and Banks, A. D. and Thomson, D. and Davis, R. F.}, year={2000}, pages={879–881} } @article{hanser_wolden_perry_zheleva_carlson_banks_therrien_davis_1998, title={Analysis of reactor geometry and diluent gas flow effects on the metalorganic vapor phase epitaxy of AlN and GaN thin films on alpha(6H) SiC substrates}, volume={27}, DOI={10.1007/s11664-998-0394-7}, number={4}, journal={Journal of Electronic Materials}, author={Hanser, A. D. and Wolden, C. A. and Perry, W. G. and Zheleva, T. S. and Carlson, E. P. and Banks, A. D. and Therrien, R. J. and Davis, R. F.}, year={1998}, pages={238–245} } @misc{roberson_finello_banks_davis_1998, title={Growth of Fe3N films via chemical vapor deposition of iron acetylacetonate and anhydrous ammonia}, volume={326}, number={1-2}, journal={Thin Solid Films}, author={Roberson, S. L. and Finello, D. and Banks, A. D. and Davis, R. F.}, year={1998}, pages={47–50} } @article{ronning_banks_mccarson_schlesser_sitar_davis_ward_nemanich_1998, title={Structural and electronic properties of boron nitride thin films containing silicon}, volume={84}, DOI={10.1063/1.368752}, number={9}, journal={Journal of Applied Physics}, author={Ronning, C. and Banks, A. D. and McCarson, B. L. and Schlesser, R. and Sitar, Z. and Davis, R. F. and Ward, B. L. and Nemanich, R. J.}, year={1998}, pages={5046–5051} }