Andrew David Banks McGinnis, A. J., Thomson, D., Banks, A., Preble, E., Davis, R. F., & Lamb, H. H. (2003). Supersonic jet epitaxy of gallium nitride using triethylgallium and ammonia. JOURNAL OF VACUUM SCIENCE & TECHNOLOGY A, 21(1), 294–301. https://doi.org/10.1116/1.1532736 Hanser, A. D., Banks, A. D., Davis, R. F., Jahnen, B., Albrecht, M., Dorsch, W., … Strunk, H. P. (2000). Growth and microstructure of InxGa1-xN films grown on SiC substrates via low pressure metalorganic vapor phase epitaxy. MATERIALS SCIENCE IN SEMICONDUCTOR PROCESSING, 3(3), 163–171. https://doi.org/10.1016/S1369-8001(99)00023-2 Smith, S. A., Lampert, W. V., Rajagopal, P., Banks, A. D., Thomson, D., & Davis, R. F. (2000). Selective etching of GaN over AlN using an inductively coupled plasma and an O-2/Cl-2/Ar chemistry. JOURNAL OF VACUUM SCIENCE & TECHNOLOGY A, 18(3), 879–881. https://doi.org/10.1116/1.582270 Hanser, A. D., Wolden, C. A., Perry, W. G., Zheleva, T., Carlson, E. P., Banks, A. D., … Davis, R. F. (1998, April). Analysis of reactor geometry and diluent gas flow effects on the metalorganic vapor phase epitaxy of AlN and GaN thin films on alpha(6H)-SiC substrates. JOURNAL OF ELECTRONIC MATERIALS, Vol. 27, pp. 238–245. https://doi.org/10.1007/s11664-998-0394-7 Roberson, S. L., Finello, D., Banks, A. D., & Davis, R. F. (1998). Growth of Fe3N films via chemical vapor deposition of iron acetylacetonate and anhydrous ammonia. Ronning, C., Banks, A. D., McCarson, B. L., Schlesser, R., Sitar, Z., Davis, R. F., … Nemanich, R. J. (1998). Structural and electronic properties of boron nitride thin films containing silicon. JOURNAL OF APPLIED PHYSICS, 84(9), 5046–5051. https://doi.org/10.1063/1.368752