@misc{sarigiannis_derderian_basceri_sandhu_gealy_carlson_2008, title={Atomic layer deposition methods}, volume={7,368,382}, number={2008 May 6}, publisher={Washington, DC: U.S. Patent and Trademark Office}, author={Sarigiannis, D. and Derderian, G. J. and Basceri, C. and Sandhu, G. S. and Gealy, F. D. and Carlson, C. M.}, year={2008} }
 @misc{basceri_gealy_sandhu_2008, title={Constructions comprising hafnium oxide}, volume={7,352,023}, number={2008 Apr. 1}, publisher={Washington, DC: U.S. Patent and Trademark Office}, author={Basceri, C. and Gealy, F. D. and Sandhu, G. S.}, year={2008} }
 @misc{basceri_gealy_s._2008, title={DRAM constructions and electronic systems}, volume={7,323,737}, number={2008 Jan. 29}, publisher={Washington, DC: U.S. Patent and Trademark Office}, author={Basceri, C. and Gealy, F. D. and S., Sandhu G.}, year={2008} }
 @misc{harris_gehrke_weeks_basceri_2008, title={Gallium nitride based high-electron mobility devices}, volume={7,326,971}, number={2008 Feb. 5}, publisher={Washington, DC: U.S. Patent and Trademark Office}, author={Harris, C. and Gehrke, T. and Weeks, T. W. and Basceri, C.}, year={2008} }
 @misc{basceri_derderian_2008, title={MIS capacitor and method of formation}, volume={7,326,984}, number={2008 Feb. 5}, publisher={Washington, DC: U.S. Patent and Trademark Office}, author={Basceri, C. and Derderian, G. J.}, year={2008} }
 @misc{basceri_2008, title={Method of forming conductive metal silicides by reaction of metal with silicon}, volume={7,358,188}, number={2008 Apr. 15}, publisher={Washington, DC: U.S. Patent and Trademark Office}, author={Basceri, C.}, year={2008} }
 @misc{harris_gehrke_weeks_basceri_2008, title={Method of manufacturing gallium nitride based high-electron mobility devices}, volume={7,364,988}, number={2008 Apr. 29}, publisher={Washington, DC: U.S. Patent and Trademark Office}, author={Harris, C. and Gehrke, T. and Weeks, T. W. and Basceri, C.}, year={2008} }
 @misc{beaman_weimer_breiner_ping_doan_basceri_kubista_zheng_2008, title={Methods and apparatus for processing microfeature workpieces; methods for conditioning ALD reaction chambers}, volume={7,344,755}, number={2008 Mar. 18}, publisher={Washington, DC: U.S. Patent and Trademark Office}, author={Beaman, K. L. and Weimer, R. A. and Breiner, L. D. and Ping, E. X. and Doan, T. T. and Basceri, C. and Kubista, D. J. and Zheng, L. A.}, year={2008} }
 @misc{miller_basceri_2008, title={Methods of forming capacitor}, volume={7,329,573}, number={2008 Feb. 12}, publisher={Washington, DC: U.S. Patent and Trademark Office}, author={Miller, M. W. and Basceri, C.}, year={2008} }
 @misc{sarigiannis_derderian_basceri_2008, title={Methods of forming materials}, volume={7,368,381}, number={2008 May 6}, publisher={Washington, DC: U.S. Patent and Trademark Office}, author={Sarigiannis, D. and Derderian, G. J. and Basceri, C.}, year={2008} }
 @misc{basceri_sandhu_2008, title={Methods of forming pluralities of capacitors}, volume={7,320,911}, number={2008 Jan. 22}, publisher={Washington, DC: U.S. Patent and Trademark Office}, author={Basceri, C. and Sandhu, G. S.}, year={2008} }
 @misc{basceri_2008, title={Semiconductor manufacturing apparatus for modifying-in-film stress of thin films, and product formed thereby}, volume={7,358,554}, number={2008 Apr. 15}, publisher={Washington, DC: U.S. Patent and Trademark Office}, author={Basceri, C.}, year={2008} }
 @misc{basceri_sandhu_2008, title={Supercritical fluid technology for cleaning processing chambers and systems}, volume={7,323,064}, number={2008 Jan. 29}, publisher={Washington, DC: U.S. Patent and Trademark Office}, author={Basceri, C. and Sandhu, G. S.}, year={2008} }
 @misc{harris_konstantinov_basceri_2008, title={Vertical junction field effect transistor having an epitaxial gate}, volume={7,355,223}, number={2008 Apr. 8}, publisher={Washington, DC: U.S. Patent and Trademark Office}, author={Harris, C. and Konstantinov, A. and Basceri, C.}, year={2008} }
 @misc{sarigiannis_derderian_basceri_sandhu_gealy_carlson_2007, title={Atomic layer deposition methods}, volume={7,303,991}, number={2007 Dec. 4}, publisher={Washington, DC: U.S. Patent and Trademark Office}, author={Sarigiannis, D. and Derderian, G. J. and Basceri, C. and Sandhu, G. S. and Gealy, F. D. and Carlson, C. M.}, year={2007} }
 @misc{pontoh_basceri_graettinger_2007, title={Capacitor constructions}, volume={7,274,059}, number={2007 Sep. 25}, publisher={Washington, DC: U.S. Patent and Trademark Office}, author={Pontoh, M. and Basceri, C. and Graettinger, T. M.}, year={2007} }
 @misc{basceri_sandhu_yang_2007, title={Capacitor with high dielectric constant materials and method of making}, volume={7,192,828}, number={2007 Mar. 20}, publisher={Washington, DC: U.S. Patent and Trademark Office}, author={Basceri, C. and Sandhu, G. S. and Yang, S.}, year={2007} }
 @misc{basceri_alzola_2007, title={Chemical vapor deposition methods of forming barium strontium titanate comprising dielectric layers, including such layers having a varied concentration of barium and strontium within the layer}, volume={7,208,198}, number={2007 Apr. 24}, publisher={Washington, DC: U.S. Patent and Trademark Office}, author={Basceri, C. and Alzola, N.}, year={2007} }
 @misc{basceri_derderian_2007, title={Circuit constructions}, volume={7,176,118}, number={2007 Feb. 13}, publisher={Washington, DC: U.S. Patent and Trademark Office}, author={Basceri, C. and Derderian, G. J.}, year={2007} }
 @misc{basceri_2007, title={Constructions comprising perovskite-type dielectric}, volume={7,309,889}, number={2007 Dec. 18}, publisher={Washington, DC: U.S. Patent and Trademark Office}, author={Basceri, C.}, year={2007} }
 @misc{blomiley_sandhu_basceri_ramaswamy_2007, title={Deposition methods}, volume={7,253,085}, number={2007 Aug. 7}, publisher={Washington, DC: U.S. Patent and Trademark Office}, author={Blomiley, E. R. and Sandhu, G. S. and Basceri, C. and Ramaswamy, N.}, year={2007} }
 @misc{marsh_vaartstra_castrovillo_basceri_derderian_sandhu_2007, title={Deposition methods with time spaced and time abutting precursor pulses}, volume={7,271,077}, number={2007 Sep. 18}, publisher={Washington, DC: U.S. Patent and Trademark Office}, author={Marsh, E. and Vaartstra, B. and Castrovillo, P. J. and Basceri, C. and Derderian, G. J. and Sandhu, G. S.}, year={2007} }
 @misc{basceri_manning_sandhu_parekh_2007, title={Gated field effect device comprising gate dielectric having different K regions}, volume={7,161,203}, number={2007 Jan. 9}, publisher={Washington, DC: U.S. Patent and Trademark Office}, author={Basceri, C. and Manning, H. M. and Sandhu, G. S. and Parekh, K. R.}, year={2007} }
 @misc{basceri_derderian_2007, title={MIS capacitor}, volume={7,164,165}, number={2007 Jan. 16}, publisher={Washington, DC: U.S. Patent and Trademark Office}, author={Basceri, C. and Derderian, G. J.}, year={2007} }
 @misc{derderian_basceri_westermoreland_2007, title={Method for binding halide-based contaminants during formation of a titanium-based film}, volume={7,311,942}, number={2007 Dec. 25}, publisher={Washington, DC: U.S. Patent and Trademark Office}, author={Derderian, G. J. and Basceri, C. and Westermoreland, D. L.}, year={2007} }
 @misc{ramaswamy_sandhu_basceri_blomiley_2007, title={Method of forming a vertical transistor}, volume={7,276,416}, number={2007 Oct. 2}, publisher={Washington, DC: U.S. Patent and Trademark Office}, author={Ramaswamy, N. and Sandhu, G. S. and Basceri, C. and Blomiley, E. R.}, year={2007} }
 @misc{basceri_yushin_balkas_2007, title={Method of forming semi-insulating silicon carbide single crystal}, volume={7,276,117}, number={2007 Oct. 2}, publisher={Washington, DC: U.S. Patent and Trademark Office}, author={Basceri, C. and Yushin, N. and Balkas, C. M.}, year={2007} }
 @misc{harris_konstantinov_basceri_2007, title={Method of manufacturing a vertical junction field effect transistor having an epitaxial gate}, volume={7,279,368}, number={2007 Oct. 9}, publisher={Washington, DC: U.S. Patent and Trademark Office}, author={Harris, C. and Konstantinov, A. and Basceri, C.}, year={2007} }
 @misc{sarigiannis_basceri_hill_derderian_2007, title={Method of removing residual contaminants from an environment}, volume={7,247,561}, number={2007 Jul. 24}, publisher={Washington, DC: U.S. Patent and Trademark Office}, author={Sarigiannis, D. and Basceri, C. and Hill, C. W. and Derderian, G. J.}, year={2007} }
 @misc{beaman_doan_breiner_weimer_ping_kubista_basceri_zheng_2007, title={Methods and systems for controlling temperature during microfeature workpiece processing, e.g., CVD deposition}, volume={7,258,892}, number={2007 Aug. 21}, publisher={Washington, DC: U.S. Patent and Trademark Office}, author={Beaman, K. L. and Doan, T. T. and Breiner, L. D. and Weimer, R. A. and Ping, E. X. and Kubista, D. J. and Basceri, C. and Zheng, L. A.}, year={2007} }
 @misc{basceri_sandhu_2007, title={Methods for forming a conductive structure using oxygen diffusion through one metal layer to oxidize a second metal layer}, volume={7,273,791}, number={2007 Sep. 25}, publisher={Washington, DC: U.S. Patent and Trademark Office}, author={Basceri, C. and Sandhu, G.}, year={2007} }
 @misc{basceri_visokay_graettinger_cummings_2007, title={Methods for forming and integrated circuit structures containing enhanced-surface-area conductive layers}, volume={7,253,102}, number={2007 Aug. 7}, publisher={Washington, DC: U.S. Patent and Trademark Office}, author={Basceri, C. and Visokay, M. and Graettinger, T. M. and Cummings, S. D.}, year={2007} }
 @misc{agarwal_derderian_sandhu_li_visokay_basceri_yang_2007, title={Methods for forming and integrated circuit structures containing ruthenium and tungsten containing layers}, volume={7,253,076}, number={2007 Aug. 7}, publisher={Washington, DC: U.S. Patent and Trademark Office}, author={Agarwal, V. K. and Derderian, G. and Sandhu, G. S. and Li, W. M. and Visokay, M. and Basceri, C. and Yang, S.}, year={2007} }
 @misc{basceri_2007, title={Methods of forming a capacitor}, volume={7,217,617}, number={2007 May 15}, publisher={Washington, DC: U.S. Patent and Trademark Office}, author={Basceri, C.}, year={2007} }
 @misc{basceri_sandhu_manning_2007, title={Methods of forming conductive contacts to source/drain regions and methods of forming local interconnects}, volume={7,241,705}, number={2007 Jul. 10}, publisher={Washington, DC: U.S. Patent and Trademark Office}, author={Basceri, C. and Sandhu, G. S. and Manning, H. M.}, year={2007} }
 @misc{sandhu_manning_basceri_2007, title={Methods of forming field effect transistors}, volume={7,262,099}, number={2007 Aug. 28}, publisher={Washington, DC: U.S. Patent and Trademark Office}, author={Sandhu, G. S. and Manning, H. M. and Basceri, C.}, year={2007} }
 @misc{basceri_gealy_sandhu_2007, title={Methods of forming hafnium oxide}, volume={7,217,630}, number={2007 May 15}, publisher={Washington, DC: U.S. Patent and Trademark Office}, author={Basceri, C. and Gealy, F. D. and Sandhu, G. S.}, year={2007} }
 @misc{basceri_sandhu_2007, title={Methods of forming pluralities of capacitors, and integrated circuitry}, volume={7,268,034}, number={2007 Sep. 11}, publisher={Washington, DC: U.S. Patent and Trademark Office}, author={Basceri, C. and Sandhu, G. S.}, year={2007} }
 @misc{zhaeng_doan_breiner_ping_weimer_kubista_beaman_basceri_2007, title={Microfeature workpiece processing apparatus and methods for batch deposition of materials on microfeature workpieces}, volume={7,235,138}, number={2007 Jun. 26}, publisher={Washington, DC: U.S. Patent and Trademark Office}, author={Zhaeng, L. A. and Doan, T. T. and Breiner, L. D. and Ping, E. X. and Weimer, R. A. and Kubista, D. J. and Beaman, K. L. and Basceri, C.}, year={2007} }
 @misc{basceri_doan_weimer_beaman_breiner_zheng_ping_sarigiannis_kubista_2007, title={Microfeature workpiece processing apparatus and methods for controlling deposition of materials on microfeature workpieces}, volume={7,279,398}, number={2007 Oct. 9}, publisher={Washington, DC: U.S. Patent and Trademark Office}, author={Basceri, C. and Doan, T. T. and Weimer, R. A. and Beaman, K. L. and Breiner, L. D. and Zheng, L. A. and Ping, E. X. and Sarigiannis, D. and Kubista, D. J.}, year={2007} }
 @misc{basceri_sandhu_2007, title={Mixed composition interface layer and method of forming}, volume={7,273,660}, number={2007 Sep. 25}, publisher={Washington, DC: U.S. Patent and Trademark Office}, author={Basceri, C. and Sandhu, G. S.}, year={2007} }
 @misc{basceri_sandhu_2007, title={One-transistor composite-gate memory}, volume={7,268,388}, number={2007 Sep. 11}, publisher={Washington, DC: U.S. Patent and Trademark Office}, author={Basceri, C. and Sandhu, G. S.}, year={2007} }
 @misc{basceri_agarwal_gealy_2007, title={Structures and methods for enhancing capacitors in integrated circuits}, volume={7,232,721}, number={2007 Jun. 19}, publisher={Washington, DC: U.S. Patent and Trademark Office}, author={Basceri, C. and Agarwal, V. K. and Gealy, D.}, year={2007} }
 @misc{castovillo_basceri_derderian_sandhu_2006, title={Atomic layer deposition method}, volume={7,128,787}, number={2006 Oct. 31}, publisher={Washington, DC: U.S. Patent and Trademark Office}, author={Castovillo, P. J. and Basceri, C. and Derderian, G. J. and Sandhu, G. S.}, year={2006} }
 @misc{castovillo_basceri_derderian_sandhu_2006, title={Atomic layer deposition methods}, volume={7,150,789}, number={2006 Dec. 19}, publisher={Washington, DC: U.S. Patent and Trademark Office}, author={Castovillo, P. J. and Basceri, C. and Derderian, G. J. and Sandhu, G. S.}, year={2006} }
 @misc{basceri_gealy_sandhu_2006, title={Capacitor constructions}, volume={7,129,535}, number={2006 Oct. 31}, publisher={Washington, DC: U.S. Patent and Trademark Office}, author={Basceri, C. and Gealy, F. D. and Sandhu, G. S.}, year={2006} }
 @misc{basceri_derderian_2006, title={Capacitor constructions, semiconductor constructions, and methods of forming electrical contacts and semiconductor constructions}, volume={7,015,533}, number={2006 Mar. 21}, publisher={Washington, DC: U.S. Patent and Trademark Office}, author={Basceri, C. and Derderian, G. J.}, year={2006} }
 @misc{basceri_sandhu_visokay_2006, title={Capacitor with high dielectric constant materials and method of making}, volume={7,037,730}, number={2006 May 2}, publisher={Washington, DC: U.S. Patent and Trademark Office}, author={Basceri, C. and Sandhu, G. S. and Visokay, M.}, year={2006} }
 @misc{basceri_alzola_2006, title={Chemical vapor deposition methods of forming barium strontium titanate comprising dielectric layers, including such layers having a varied concentration of barium and strontium within the layer}, volume={6,982,103}, number={2006 Jan. 3}, publisher={Washington, DC: U.S. Patent and Trademark Office}, author={Basceri, C. and Alzola, N.}, year={2006} }
 @misc{basceri_graettinger_2006, title={DRAM cells and electronic systems}, volume={7,092,234}, number={2006 Aug. 15}, publisher={Washington, DC: U.S. Patent and Trademark Office}, author={Basceri, C. and Graettinger, T. M.}, year={2006} }
 @misc{basceri_derderian_2006, title={Method of forming MIS capacitor}, volume={7,029,985}, number={2006 Apr. 18}, publisher={Washington, DC: U.S. Patent and Trademark Office}, author={Basceri, C. and Derderian, G. J.}, year={2006} }
 @misc{basceri_2006, title={Method of forming a capacitor}, volume={7,052,584}, number={2006 May 30}, publisher={Washington, DC: U.S. Patent and Trademark Office}, author={Basceri, C.}, year={2006} }
 @misc{basceri_derderian_2006, title={Method of forming a capacitor}, volume={7,153,751}, number={2006 Dec. 26}, publisher={Washington, DC: U.S. Patent and Trademark Office}, author={Basceri, C. and Derderian, G. J.}, year={2006} }
 @misc{ramaswamy_sandhu_basceri_blomiley_2006, title={Method of forming a layer comprising epitaxial silicon and a field effect transistor}, volume={7,132,355}, number={2006 Nov. 7}, publisher={Washington, DC: U.S. Patent and Trademark Office}, author={Ramaswamy, N. and Sandhu, G. S. and Basceri, C. and Blomiley, E. R.}, year={2006} }
 @misc{ramaswamy_sandhu_basceri_blomiley_2006, title={Method of forming epitaxial silicon-comprising material}, volume={7,144,779}, number={2006 Dec. 5}, publisher={Washington, DC: U.S. Patent and Trademark Office}, author={Ramaswamy, N. and Sandhu, G. S. and Basceri, C. and Blomiley, E. R.}, year={2006} }
 @misc{chopra_donahoe_basceri_2006, title={Method of providing a structure using self-aligned features}, volume={7,109,112}, number={2006 Sep. 19}, publisher={Washington, DC: U.S. Patent and Trademark Office}, author={Chopra, D. and Donahoe, K. G. and Basceri, C.}, year={2006} }
 @misc{sarigiannis_derderian_basceri_2006, title={Methods of depositing materials over substrates, and methods of forming layers over substrates}, volume={7,048,968}, number={2006 May 23}, publisher={Washington, DC: U.S. Patent and Trademark Office}, author={Sarigiannis, D. and Derderian, G. J. and Basceri, C.}, year={2006} }
 @misc{basceri_graettinger_2006, title={Methods of forming capacitor constructions}, volume={7,033,884}, number={2006 Apr. 25}, publisher={Washington, DC: U.S. Patent and Trademark Office}, author={Basceri, C. and Graettinger, T. M.}, year={2006} }
 @misc{basceri_2006, title={Methods of forming capacitor constructions comprising perovskite-type dielectric materials with different amount of crystallinity regions}, volume={7,011,978}, number={2006 Mar. 14}, publisher={Washington, DC: U.S. Patent and Trademark Office}, author={Basceri, C.}, year={2006} }
 @misc{basceri_sandhu_2006, title={Methods of forming capacitors}, volume={7,101,767}, number={2006 Sep. 5}, publisher={Washington, DC: U.S. Patent and Trademark Office}, author={Basceri, C. and Sandhu, G. S.}, year={2006} }
 @misc{basceri_2006, title={Methods of forming conductive material silicides by reaction of metal with silicon}, volume={7,026,243}, number={2006 Apr. 11}, publisher={Washington, DC: U.S. Patent and Trademark Office}, author={Basceri, C.}, year={2006} }
 @misc{sarigiannis_derderian_basceri_2006, title={Methods of forming layers over substrates}, volume={7,087,525}, number={2006 Aug. 8}, publisher={Washington, DC: U.S. Patent and Trademark Office}, author={Sarigiannis, D. and Derderian, G. J. and Basceri, C.}, year={2006} }
 @misc{ramaswamy_basceri_2006, title={Methods of growing epitaxial silicon}, volume={7,115,489}, number={2006 Oct. 3}, publisher={Washington, DC: U.S. Patent and Trademark Office}, author={Ramaswamy, N. and Basceri, C.}, year={2006} }
 @misc{basceri_doan_weimer_beaman_breiner_zheng_ping_sarigiannis_kubista_2006, title={Microfeature workpiece processing apparatus and methods for controlling deposition of materials on microfeature workpieces}, volume={7,056,806}, number={2006 Jun. 6}, publisher={Washington, DC: U.S. Patent and Trademark Office}, author={Basceri, C. and Doan, T. T. and Weimer, R. A. and Beaman, K. L. and Breiner, L. D. and Zheng, L. A. and Ping, E. X. and Sarigiannis, D. and Kubista, D. J.}, year={2006} }
 @misc{basceri_vasilyeva_derraa_campbell_sandhu_2006, title={Plasma enhanced chemical vapor deposition method of forming a titanium silicide comprising layer}, volume={7,033,642}, number={2006 Apr. 25}, publisher={Washington, DC: U.S. Patent and Trademark Office}, author={Basceri, C. and Vasilyeva, I. and Derraa, A. and Campbell, P. H. and Sandhu, G. S.}, year={2006} }
 @misc{basceri_agarwal_gealy_2006, title={Structures and methods for enhancing capacitors in integrated circuits}, volume={7,009,240}, number={2006 Mar. 7}, publisher={Washington, DC: U.S. Patent and Trademark Office}, author={Basceri, C. and Agarwal, V. K. and Gealy, D.}, year={2006} }
 @misc{basceri_rhodes_sandhu_gealy_graettinger_2006, title={Top electrode in a strongly oxidizing environment}, volume={7,023,043}, number={2006 Apr. 4}, publisher={Washington, DC: U.S. Patent and Trademark Office}, author={Basceri, C. and Rhodes, H. E. and Sandhu, G. and Gealy, F. D. and Graettinger, T. M.}, year={2006} }
 @misc{derderian_basceri_sandhu_sarigiannis_2005, title={Atomic layer deposition apparatus and methods}, volume={6,896,730}, number={2005 May 24}, publisher={Washington, DC: U.S. Patent and Trademark Office}, author={Derderian, G. J. and Basceri, C. and Sandhu, G. S. and Sarigiannis, D.}, year={2005} }
 @misc{basceri_2005, title={Capacitor constructions comprising perovskite-type dielectric materials and having different degrees of crystallinity within the perovskite-type dielectric materials}, volume={6,888,188}, number={2005 May 3}, publisher={Washington, DC: U.S. Patent and Trademark Office}, author={Basceri, C.}, year={2005} }
 @misc{basceri_2005, title={Chemical vapor deposition method for depositing a high k dielectric film}, volume={6,884,475}, number={2005 Apr. 26}, publisher={Washington, DC: U.S. Patent and Trademark Office}, author={Basceri, C.}, year={2005} }
 @misc{basceri_azola_2005, title={Chemical vapor deposition methods of forming barium strontium titanate comprising dielectric layers}, volume={6,838,122}, number={2005 Jan. 4}, publisher={Washington, DC: U.S. Patent and Trademark Office}, author={Basceri, C. and Azola, N.}, year={2005} }
 @misc{basceri_sandhu_2005, title={Conductive semiconductor structures containing metal oxide regions}, volume={6,917,112}, number={2005 Jul. 12}, publisher={Washington, DC: U.S. Patent and Trademark Office}, author={Basceri, C. and Sandhu, G.}, year={2005} }
 @misc{sarigiannis_derderian_basceri_sandhu_gealy_carlson_2005, title={Deposition methods}, volume={6,890,596}, number={2005 May 10}, publisher={Washington, DC: U.S. Patent and Trademark Office}, author={Sarigiannis, D. and Derderian, G. J. and Basceri, C. and Sandhu, G. S. and Gealy, F. D. and Carlson, C. M.}, year={2005} }
 @misc{basceri_sandhu_2005, title={Dielectric cure for reducing oxygen vacancies}, volume={6,878,602}, number={2005 Apr. 12}, publisher={Washington, DC: U.S. Patent and Trademark Office}, author={Basceri, C. and Sandhu, G. S.}, year={2005} }
 @misc{basceri_2005, title={Gas delivery system for pulsed-type deposition processes used in the manufacturing of micro-devices}, volume={6,887,521}, number={2005 May 3}, publisher={Washington, DC: U.S. Patent and Trademark Office}, author={Basceri, C.}, year={2005} }
 @misc{basceri_sandhu_2005, title={Haze-free BST films}, volume={6,924,968}, number={2005 Aug. 2}, publisher={Washington, DC: U.S. Patent and Trademark Office}, author={Basceri, C. and Sandhu, G.}, year={2005} }
 @misc{rhodes_visokay_graettinger_gealy_sandhu_basceri_cummings_2005, title={Integrated capacitors fabricated with conductive metal oxides}, volume={6,940,112}, number={2005 Sep. 6}, publisher={Washington, DC: U.S. Patent and Trademark Office}, author={Rhodes, H. E. and Visokay, M. and Graettinger, T. and Gealy, D. and Sandhu, G. and Basceri, C. and Cummings, S.}, year={2005} }
 @misc{basceri_gealy_sandhu_2005, title={Method for controlling deposition of dielectric films}, volume={6,962,824}, number={2005 Nov. 8}, publisher={Washington, DC: U.S. Patent and Trademark Office}, author={Basceri, C. and Gealy, D. and Sandhu, G. S.}, year={2005} }
 @misc{basceri_braettinger_2005, title={Method of forming a MIM capacitor with metal nitride electrode}, volume={6,881,642}, number={2005 Apr. 19}, publisher={Washington, DC: U.S. Patent and Trademark Office}, author={Basceri, C. and Braettinger, T. M.}, year={2005} }
 @misc{basceri_sandhu_2005, title={Method of forming haze-free BST films}, volume={6,939,723}, number={2005 Sep. 6}, publisher={Washington, DC: U.S. Patent and Trademark Office}, author={Basceri, C. and Sandhu, G.}, year={2005} }
 @misc{basceri_derderian_2005, title={Methods of forming capacitor constructions}, volume={6,900,106}, number={2005 May 31}, publisher={Washington, DC: U.S. Patent and Trademark Office}, author={Basceri, C. and Derderian, G. J.}, year={2005} }
 @misc{basceri_derderian_2005, title={Methods of forming conductive connections, and methods of forming nanofeatures}, volume={6,905,955}, number={2005 Jun. 14}, publisher={Washington, DC: U.S. Patent and Trademark Office}, author={Basceri, C. and Derderian, G. J.}, year={2005} }
 @misc{derderian_basceri_2005, title={Methods of forming conductive metal silicides by reaction of metal with silicon}, volume={6,969,677}, number={2005 Nov. 29}, publisher={Washington, DC: U.S. Patent and Trademark Office}, author={Derderian, G. J. and Basceri, C.}, year={2005} }
 @misc{basceri_2005, title={Methods of forming perovskite-type dielectric materials with chemical vapor deposition}, volume={6,958,267}, number={2005 Oct. 25}, publisher={Washington, DC: U.S. Patent and Trademark Office}, author={Basceri, C.}, year={2005} }
 @misc{pontoh_basceri_greattinger_2005, title={Methods of forming rugged electrically conductive surfaces and layers}, volume={6,964,901}, number={2005 Nov. 15}, publisher={Washington, DC: U.S. Patent and Trademark Office}, author={Pontoh, M. and Basceri, C. and Greattinger, T. M.}, year={2005} }
 @misc{basceri_sandhu_2005, title={Mixed composition interface layer and method of forming}, volume={6,908,639}, number={2005 Jun. 21}, publisher={Washington, DC: U.S. Patent and Trademark Office}, author={Basceri, C. and Sandhu, G.}, year={2005} }
 @misc{basceri_sandhu_2005, title={Reactors having gas distributors and methods for depositing materials onto micro-device workpieces}, volume={6,884,296}, number={2005 Apr. 26}, publisher={Washington, DC: U.S. Patent and Trademark Office}, author={Basceri, C. and Sandhu, G. S.}, year={2005} }
 @misc{basceri_2005, title={Semiconductor manufacturing process and apparatus for modifying in-film stress of thin films, and product formed thereby}, volume={6,884,718}, number={2005 Apr. 26}, publisher={Washington, DC: U.S. Patent and Trademark Office}, author={Basceri, C.}, year={2005} }
 @misc{basceri_sandhu_2005, title={Structures and methods for enhancing capacitors in integrated circuits}, volume={6,861,330}, number={2005 Mar. 1}, publisher={Washington, DC: U.S. Patent and Trademark Office}, author={Basceri, C. and Sandhu, G. S.}, year={2005} }
 @misc{basceri_2005, title={Thin film capacitor with substantially homogenous stoichiometry}, volume={6,952,029}, number={2005 Oct. 4}, publisher={Washington, DC: U.S. Patent and Trademark Office}, author={Basceri, C.}, year={2005} }
 @misc{marsh_vaartstra_castrovillo_basceri_derderian_sandhu_2004, title={Atomic layer deposition methods}, volume={6,673,701}, number={2004 Jan. 6}, publisher={Washington, DC: U.S. Patent and Trademark Office}, author={Marsh, E. and Vaartstra, B. and Castrovillo, P. J. and Basceri, C. and Derderian, G. J. and Sandhu, G. S.}, year={2004} }
 @misc{sarigiannis_derderian_basceri_sandhu_gealy_carlson_2004, title={Atomic layer deposition methods}, volume={6,753,271}, number={2004 Jun. 22}, publisher={Washington, DC: U.S. Patent and Trademark Office}, author={Sarigiannis, D. and Derderian, G. J. and Basceri, C. and Sandhu, G. S. and Gealy, F. D. and Carlson, C. M.}, year={2004} }
 @misc{basceri_sandhu_yang_2004, title={Capacitor with high dielectric constant materials and method of making}, volume={6,727,140}, number={2004 Apr. 27}, publisher={Washington, DC: U.S. Patent and Trademark Office}, author={Basceri, C. and Sandhu, G. S. and Yang, S.}, year={2004} }
 @misc{derraa_basceri_vasilyeva_campbell_sandhu_2004, title={Chemical vapor deposition method of forming a material over at least two substrates}, volume={6,730,355}, number={2004 May 4}, publisher={Washington, DC: U.S. Patent and Trademark Office}, author={Derraa, A. and Basceri, C. and Vasilyeva, I. and Campbell, P. H. and Sandhu, G. S.}, year={2004} }
 @misc{basceri_graettinger_2004, title={MIM capacitor with metal nitride electrode materials and method of formation}, volume={6,753,618}, number={2004 Jun. 22}, publisher={Washington, DC: U.S. Patent and Trademark Office}, author={Basceri, C. and Graettinger, T. M.}, year={2004} }
 @misc{basceri_al-shareef_2004, title={Method for improving the resistance degradation of thin film capacitors}, volume={6,720,607}, number={2004 Apr. 13}, publisher={Washington, DC: U.S. Patent and Trademark Office}, author={Basceri, C. and Al-Shareef, H. N.}, year={2004} }
 @misc{gealy_basceri_2004, title={Method for reducing physisorption during atomic layer deposition}, volume={6,784,083}, number={2004 Aug. 31}, publisher={Washington, DC: U.S. Patent and Trademark Office}, author={Gealy, F. D. and Basceri, C.}, year={2004} }
 @misc{basceri_derderian_visokay_drynan_sandhu_2004, title={Method of forming a patterned substantially crystalline TA2O5 comprising material, and method of forming a capacitor having a capacitor dilelectric region comprising substantially crystalline TA2O5 comprising material}, volume={6,767,806}, number={2004 Jul. 27}, publisher={Washington, DC: U.S. Patent and Trademark Office}, author={Basceri, C. and Derderian, G. J. and Visokay, M. R. and Drynan, J. M. and Sandhu, G. S.}, year={2004} }
 @misc{chopra_donohoe_basceri_2004, title={Method of providing a structure using self-aligned features}, volume={6,759,330}, number={2004 Jul. 6}, publisher={Washington, DC: U.S. Patent and Trademark Office}, author={Chopra, D. and Donohoe, K. G. and Basceri, C.}, year={2004} }
 @misc{basceri_sandhu_2004, title={Method of reducing oxygen vacancies and DRAM processing method}, volume={6,673,669}, number={2004 Jan. 6}, publisher={Washington, DC: U.S. Patent and Trademark Office}, author={Basceri, C. and Sandhu, G. S.}, year={2004} }
 @misc{basceri_visokay_graettinger_cummings_2004, title={Methods for forming and integrated circuit structures containing enhanced-surface-area conductive layers}, volume={6,812,112}, number={2004 Nov. 2}, publisher={Washington, DC: U.S. Patent and Trademark Office}, author={Basceri, C. and Visokay, M. and Graettinger, T. M. and Cummings, S. D.}, year={2004} }
 @misc{basceri_visokay_greattinger_cummings_2004, title={Methods for forming and integrated circuit structures containing enhanced-surface-area conductive layers}, volume={6,764,943}, number={2004 Jul. 20}, publisher={Washington, DC: U.S. Patent and Trademark Office}, author={Basceri, C. and Visokay, M. and Greattinger, T. M. and Cummings, S. D.}, year={2004} }
 @misc{agarwal_derderian_sandhu_li_m._m._c._yang_2004, title={Methods for forming and integrated circuit structures containing ruthenium and tungsten containing layers}, volume={6,833,576}, number={2004 Dec. 21}, publisher={Washington, DC: U.S. Patent and Trademark Office}, author={Agarwal, V. K. and Derderian, G. and Sandhu, G. S. and Li, W. and M., Visokay and M., Basceri and C. and Yang, S.}, year={2004} }
 @misc{basceri_gealy_sandhu_2004, title={Methods of forming capacitor constructions, and methods of forming constructions comprising dielectric materials}, volume={6,812,110}, number={2004 Nov. 2}, publisher={Washington, DC: U.S. Patent and Trademark Office}, author={Basceri, C. and Gealy, F. D. and Sandhu, G. S.}, year={2004} }
 @misc{basceri_gealy_sandhu_2004, title={Methods of forming hafnium-containing materials, methods of forming hafnium oxide, and capacitor constructions comprising hafnium oxide}, volume={6,785,120}, number={2004 Aug. 31}, publisher={Washington, DC: U.S. Patent and Trademark Office}, author={Basceri, C. and Gealy, F. D. and Sandhu, G. S.}, year={2004} }
 @misc{basceri_derderian_2004, title={Methods of forming regions of differing composition over a substrate}, volume={6,780,766}, number={2004 Aug. 24}, publisher={Washington, DC: U.S. Patent and Trademark Office}, author={Basceri, C. and Derderian, G. J.}, year={2004} }
 @misc{sarigiannis_derderian_basceri_2004, title={Methods of forming trenched isolation regions}, volume={6,835,664}, number={2004 Dec. 28}, publisher={Washington, DC: U.S. Patent and Trademark Office}, author={Sarigiannis, D. and Derderian, G. J. and Basceri, C.}, year={2004} }
 @misc{basceri_vasilyeva_derraa_campbell_sandhu_2004, title={Plasma enhanced chemical vapor deposition method of forming titanium silicide comprising layers}, volume={6,767,823}, number={2004 Jul. 27}, publisher={Washington, DC: U.S. Patent and Trademark Office}, author={Basceri, C. and Vasilyeva, I. and Derraa, A. and Campbell, P. H. and Sandhu, G. S.}, year={2004} }
 @misc{basceri_vasilyeva_derraa_campell_sandhu_2004, title={Plasma enhanced chemical vapor deposition methods of forming titanium silicide comprising layers over a plurality of semiconductor substrates}, volume={6,734,051}, number={2004 May 11}, publisher={Washington, DC: U.S. Patent and Trademark Office}, author={Basceri, C. and Vasilyeva, I. and Derraa, A. and Campell, P. H. and Sandhu, G. S.}, year={2004} }
 @misc{basceri_sanhu_2004, title={Structures and methods for enhancing capacitors in integrated ciruits}, volume={6,696,716}, number={2004 Feb. 24}, publisher={Washington, DC: U.S. Patent and Trademark Office}, author={Basceri, C. and Sanhu, G. S.}, year={2004} }
 @misc{basceri_gealy_2004, title={System and method for inhibiting imprinting of capacitor structures of a memory}, volume={6,781,864}, number={2004 Aug. 24}, publisher={Washington, DC: U.S. Patent and Trademark Office}, author={Basceri, C. and Gealy, F. D.}, year={2004} }
 @misc{basceri_rhodes_sandhu_gealy_greaetinger_2004, title={Top electrode in a strongly oxidizing environment}, volume={6,682,969}, number={2004 Jan. 27}, publisher={Washington, DC: U.S. Patent and Trademark Office}, author={Basceri, C. and Rhodes, H. E. and Sandhu, G. and Gealy, F. D. and Greaetinger, T. M.}, year={2004} }
 @misc{basceri_sandhu_yang_2003, title={Capacitor with high dielectric constant materials}, volume={6,586,796}, number={2003 Jul. 1}, publisher={Washington, DC: U.S. Patent and Trademark Office}, author={Basceri, C. and Sandhu, G. S. and Yang, S.}, year={2003} }
 @misc{basceri_sandhu_2003, title={DRAM processing methods}, volume={6,579,756}, number={2003 Jun. 17}, publisher={Washington, DC: U.S. Patent and Trademark Office}, author={Basceri, C. and Sandhu, G. S.}, year={2003} }
 @misc{basceri_sandhu_2003, title={Dielectric cure for reducing oxygen vacancies}, volume={6,589,839}, number={2003 Jul. 8}, publisher={Washington, DC: U.S. Patent and Trademark Office}, author={Basceri, C. and Sandhu, G. S.}, year={2003} }
 @misc{basceri_gealy_2003, title={Dielectric films and capacitor structures including same}, volume={6,525,365}, number={2003 Feb. 25}, publisher={Washington, DC: U.S. Patent and Trademark Office}, author={Basceri, C. and Gealy, D.}, year={2003} }
 @misc{basceri_gealy_sandhu_2003, title={Method for controlling deposition of dielectric films}, volume={6,566,147}, number={2003 May 20}, publisher={Washington, DC: U.S. Patent and Trademark Office}, author={Basceri, C. and Gealy, D. and Sandhu, G. S.}, year={2003} }
 @misc{basceri_derderian_visokay_drynan_sandhu_2003, title={Method of etching a substantially amorphous TA2O5 comprising layer}, volume={6,511,896}, number={2003 Jan. 28}, publisher={Washington, DC: U.S. Patent and Trademark Office}, author={Basceri, C. and Derderian, G. J. and Visokay, M. R. and Drynan, J. M. and Sandhu, G. S.}, year={2003} }
 @misc{basceri_derderian_visokay_drynan_sandhu_2003, title={Method of forming DRAM circuitry}, volume={6,649,466}, number={2003 Nov. 18}, publisher={Washington, DC: U.S. Patent and Trademark Office}, author={Basceri, C. and Derderian, G. J. and Visokay, M. R. and Drynan, J. M. and Sandhu, G. S.}, year={2003} }
 @misc{chopra_donohoe_basceri_2003, title={Method of forming a non-conformal layer over and exposing a trench}, volume={6,511,912}, number={2003 Jan. 28}, publisher={Washington, DC: U.S. Patent and Trademark Office}, author={Chopra, D. and Donohoe, K. G. and Basceri, C.}, year={2003} }
 @misc{basceri_sandhu_2003, title={Method of forming haze- free BST films}, volume={6,660,535}, number={2003 Dec. 9}, publisher={Washington, DC: U.S. Patent and Trademark Office}, author={Basceri, C. and Sandhu, G. S.}, year={2003} }
 @misc{agarwal_derderian_sandhu_li_visokay_basceri_yang_2003, title={Methods for forming and integrated circuit structures containing ruthenium and tungsten containing layers}, volume={6,596,583}, number={2003 Jul. 22}, publisher={Washington, DC: U.S. Patent and Trademark Office}, author={Agarwal, V. K. and Derderian, G. and Sandhu, G. S. and Li, W. M. and Visokay, M. and Basceri, C. and Yang, S.}, year={2003} }
 @misc{basceri_sandhu_2003, title={Methods for forming conductive structures and structures regarding same}, volume={6,534,357}, number={2003 Mar. 18}, publisher={Washington, DC: U.S. Patent and Trademark Office}, author={Basceri, C. and Sandhu, G.}, year={2003} }
 @misc{basceri_derderian_visokay_drynan_sandhu_2003, title={Methods of depositing a layer comprising tungsten and methods of forming a transistor gate line}, volume={6,617,250}, number={2003 Sep. 9}, publisher={Washington, DC: U.S. Patent and Trademark Office}, author={Basceri, C. and Derderian, G. J. and Visokay, M. R. and Drynan, J. M. and Sandhu, G. S.}, year={2003} }
 @misc{basceri_2003, title={Physical vapor deposition methods}, volume={6,558,517}, number={2003 May 6}, publisher={Washington, DC: U.S. Patent and Trademark Office}, author={Basceri, C.}, year={2003} }
 @misc{basceri_vasilyeva_derraa_campbell_sandhu_2003, title={Plasma enhanced chemical vapor deposition method of forming titanium silicide comprising layers}, volume={6,586,285}, number={2003 Jul. 1}, publisher={Washington, DC: U.S. Patent and Trademark Office}, author={Basceri, C. and Vasilyeva, I. and Derraa, A. and Campbell, P. H. and Sandhu, G. S.}, year={2003} }
 @misc{basceri_gealy_2003, title={System and method for inhibiting imprinting of capacitor structures of a memory}, volume={6,522,570}, number={2003 Feb. 18}, publisher={Washington, DC: U.S. Patent and Trademark Office}, author={Basceri, C. and Gealy, D. F.}, year={2003} }
 @misc{basceri_sandhu_2002, title={Capacitor processing method and DRAM processing method}, volume={6,337,237}, number={2002 Jan. 8}, publisher={Washington, DC: U.S. Patent and Trademark Office}, author={Basceri, C. and Sandhu, G. S.}, year={2002} }
 @misc{basceri_2002, title={Chemical vapor deposition methods of forming a high K dielectric layer and methods of forming a capacitor}, volume={6,335,049}, number={2002 Jan. 1}, publisher={Washington, DC: U.S. Patent and Trademark Office}, author={Basceri, C.}, year={2002} }
 @misc{basceri_gealy_2002, title={Dielectric films and methods of forming same}, volume={6,444,478}, number={2002 Sep. 3}, publisher={Washington, DC: U.S. Patent and Trademark Office}, author={Basceri, C. and Gealy, D.}, year={2002} }
 @misc{rhodes_visokay_graettinger_gealy_sandhu_basceri_cummings_2002, title={Integrated capacitors fabricated with conductive metal oxides}, volume={6,492,241}, number={2002 Dec. 10}, publisher={Washington, DC: U.S. Patent and Trademark Office}, author={Rhodes, H. E. and Visokay, M. and Graettinger, T. and Gealy, D. and Sandhu, G. and Basceri, C. and Cummings, S.}, year={2002} }
 @misc{basceri_2002, title={Method for improving the sidewall stoichiometry of thin film capacitors}, volume={6,352,866}, number={2002 Mar. 5}, publisher={Washington, DC: U.S. Patent and Trademark Office}, author={Basceri, C.}, year={2002} }
 @misc{basceri_visokay_graettinger_cummings_2002, title={Methods for forming and integrated circuit structures containing enhanced-surface-area conductive layers}, volume={6,482,736}, number={2002 Nov. 19}, publisher={Washington, DC: U.S. Patent and Trademark Office}, author={Basceri, C. and Visokay, M. and Graettinger, T. M. and Cummings, S. D.}, year={2002} }
 @misc{basceri_sandhu_2002, title={Structures and methods for enhancing capacitors in integrated circuits}, volume={6,476,432}, number={2002 Nov. 5}, publisher={Washington, DC: U.S. Patent and Trademark Office}, author={Basceri, C. and Sandhu, G. S.}, year={2002} }
 @misc{basceri_sandhu_2001, title={Dielectric cure for reducing oxygen vacancies}, volume={6,281,142}, number={2001 Aug. 28}, publisher={Washington, DC: U.S. Patent and Trademark Office}, author={Basceri, C. and Sandhu, G. S.}, year={2001} }
 @misc{basceri_al-shareef_2001, title={Method for improving the resistance degradation of thin film capacitors}, volume={6,258,655}, number={2001 Jul. 10}, publisher={Washington, DC: U.S. Patent and Trademark Office}, author={Basceri, C. and Al-Shareef, H. N.}, year={2001} }
 @misc{basceri_2001, title={Method for improving the sidewall stoichiometry of thin film capacitors}, volume={6,194,229}, number={2001 Feb. 27}, publisher={Washington, DC: U.S. Patent and Trademark Office}, author={Basceri, C.}, year={2001} }
 @misc{basceri_sandhu_2001, title={Method of forming haze-free BST films}, volume={6,319,764}, number={2001 Nov. 20}, publisher={Washington, DC: U.S. Patent and Trademark Office}, author={Basceri, C. and Sandhu, G.}, year={2001} }
 @article{stemmer_streiffer_browning_basceri_kingon_2000, title={Grain boundaries in barium strontium titanate thin films: Structure, chemistry and influence on electronic properties}, volume={8}, ISSN={["0927-7056"]}, DOI={10.1023/A:1008794520909}, number={2-3}, journal={INTERFACE SCIENCE}, author={Stemmer, S and Streiffer, SK and Browning, ND and Basceri, C and Kingon, AI}, year={2000}, month={Aug}, pages={209–221} }
 @article{streiffer_basceri_parker_lash_kingon_1999, title={Ferroelectricity in thin films: The dielectric response of fiber-textured (BaxSr1-x)Ti1+yO3+z thin films grown by chemical vapor deposition}, volume={86}, ISSN={["1089-7550"]}, DOI={10.1063/1.371404}, abstractNote={We have investigated the dielectric response of a series of {100} fiber-textured (BaxSr1−x)Ti1+yO3+z samples deposited by liquid-source metalorganic chemical vapor deposition onto Pt/SiO2/Si, as a function of the two most commonly varied microstructural parameters: film thickness and Ti nonstoichiometry y. We find that the overall behavior of these samples is adequately described by mean-field, Landau–Ginzburg–Devonshire theory as for bulk ferroelectrics. However, we quantify the impact of three separable factors for these films that greatly alter the dielectric susceptibility as a function of temperature, compared to that found for bulk ceramic samples at the same Ba/Sr ratio of 70/30: (i) Ti nonstoichiometry; (ii) the apparent interface effect; and (iii) the plane equibiaxial stress state resulting from thermal expansion mismatch strains. When these factors are properly taken into consideration, we show that these fine grained thin films behave in a manner entirely consistent with expectations based on bulk behavior. Implications can therefore be drawn concerning the nature of size effects in this ferroelectric system.}, number={8}, journal={JOURNAL OF APPLIED PHYSICS}, author={Streiffer, SK and Basceri, C and Parker, CB and Lash, SE and Kingon, AI}, year={1999}, month={Oct}, pages={4565–4575} }
 @article{lee_basceri_streiffer_kingon_yang_park_kim_1998, title={Ir and Ru bottom electrodes for (Ba, Sr) TiO3 thin films deposited by liquid delivery source chemical vapor deposition}, volume={323}, ISSN={["0040-6090"]}, DOI={10.1016/S0040-6090(97)01043-2}, abstractNote={The electrical properties and surface morphologies of (Ba, Sr)TiO3 thin films, with various bottom electrode structures, deposited by liquid delivery metal organic chemical vapor deposition were investigated. Ir and Ru films as a bottom electrode with varying deposition temperatures were prepared onto SiO2 and polySi substrate structures using ion beam sputtering technique. It is observed that electrical properties of BST films deposited by liquid delivery MOCVD was changed with the deposition temperatures of Ir and Ru as well as substrate structures. Furthermore, it is revealed that these variations in leakage current could be strongly related with the roughness of BST films.}, number={1-2}, journal={THIN SOLID FILMS}, author={Lee, WJ and Basceri, C and Streiffer, SK and Kingon, AI and Yang, DY and Park, Y and Kim, HG}, year={1998}, month={Jun}, pages={285–290} }
 @article{grossmann_hoffmann_gusowski_waser_streiffer_basceri_parker_lash_kingon_1998, title={Resistance degradation behavior of Ba0.7Sr0.3TiO3 thin films compared to mechanisms found in titanate ceramics and single crystals}, volume={22}, number={1-4}, journal={Integrated Ferroelectrics}, author={Grossmann, M. and Hoffmann, S. and Gusowski, S. and Waser, R. and Streiffer, S. K. and Basceri, C. and Parker, C. B. and Lash, S. E. and Kingon, A. I.}, year={1998}, pages={603–614} }
 @article{basceri_streiffer_kingon_waser_1997, title={The dielectric response as a function of temperature and film thickness of fiber-textured (Ba,Sr)TiO3 thin films grown by chemical vapor deposition}, volume={82}, ISSN={["0021-8979"]}, DOI={10.1063/1.366062}, abstractNote={The temperature- and field-dependent permittivities of fiber-textured Ba0.7Sr0.3TiO3 thin films grown by liquid-source metalorganic chemical vapor deposition were investigated as a function of film thickness. These films display a nonlinear dielectric response under conditions representative of those encountered in dynamic random access memories or other integrated capacitor applications. This behavior has the exact form expected for a classical nonlinear, nonhysteretic dielectric, as described in terms of a power series expansion of the free energy in the polarization as in the Landau–Ginzburg–Devonshire approach. Curie–Weiss-like behavior is exhibited above the bulk Curie point (∼300 K), although the ferroelectric phase transition appears frustrated. Small-signal capacitance measurements of films with different thicknesses (24–160 nm) indicate that only the first term in the power series expansion varies significantly with film thickness or temperature. Possible origins for this thickness dependence are discussed.}, number={5}, journal={JOURNAL OF APPLIED PHYSICS}, author={Basceri, C and Streiffer, SK and Kingon, AI and Waser, R}, year={1997}, month={Sep}, pages={2497–2504} }