@article{rozgonyi_glasko_beaman_koveshnikov_2000, title={Gettering issues using MeV ion implantation}, volume={72}, ISSN={["0921-5107"]}, DOI={10.1016/s0921-5107(99)00506-1}, abstractNote={Abstract MeV implantation has generated interest as a gettering option in silicon since it was established that under the appropriate conditions of irradiation fluence, substrate oxygen content, and annealing treatment, at least two distinct regions, denoted as R p and R p /2, getter impurities (M. Tamura, T. Ando, O.K., Nucl. Instrum. Methods Phys. Res. B 59/60 (1991) 572; A. Agarwal, K. Christensen, D. Venables, D.M. Maher, G.A. Rozgonyi, Appl. Phys. Lett. 69 (1996) 3899). In the present work we report on the thermal stability of Fe gettered at R p due to MeV ion implantation-induced dislocation loops in Fe contaminated CZ Si wafers, and an activation energy for the release of gettered Fe of 0.80 eV. It has also been determined that, the gettering mechanism in the R p /2 region in epitaxial Si for high MeV ion doses (≈5×10 15 Ge cm −2 ) is vacancy-related, since TEM analysis revealed 4–11-nm diameter voids. Under the annealing conditions studied, these voids were found to be more efficient at Fe capture than R p defects.}, number={2-3}, journal={MATERIALS SCIENCE AND ENGINEERING B-SOLID STATE MATERIALS FOR ADVANCED TECHNOLOGY}, author={Rozgonyi, GA and Glasko, JM and Beaman, KL and Koveshnikov, SV}, year={2000}, month={Mar}, pages={87–92} }
 @article{beaman_glasko_koveshnikov_rozgonyi_1999, title={Gettering at vacancy and interstitial-rich regions in MeV ion implanted silicon}, volume={70}, number={1999}, journal={Diffusion and Defect Data. [Pt. B], Solid State Phenomena}, author={Beaman, K. L. and Glasko, J. M. and Koveshnikov, S. V. and Rozgonyi, G. A.}, year={1999}, pages={247–252} }
 @article{beaman_kononchuk_koveshnikov_osburn_rozgonyi_1999, title={Lateral gettering of Fe on bulk and silicon-on-insulator wafers}, volume={146}, ISSN={["1945-7111"]}, DOI={10.1149/1.1391867}, abstractNote={Laterally displaced gettering sites have been studied as an alternative to traditional internal gettering and back-side gettering sites. Fe was diffused laterally and captured, first by coulombic pairing with B in p-type Si, and then by strategically placed ion implantation induced dislocation loops. This localization of Fe was tracked by both deep level transient spectroscopy and capacitance-voltage measurements. As proof of the viability of the gettering technique, laterally displaced gettering sites were formed adjacent to capacitors on various silicon-on-insulator (SOI) substrate types. Both implantation induced dislocation loops and P diffusion were used for gettering. An improvement in gate oxide integrity was observed for capacitors with lateral gettering on all SOI types studied.}, number={5}, journal={JOURNAL OF THE ELECTROCHEMICAL SOCIETY}, author={Beaman, KL and Kononchuk, O and Koveshnikov, S and Osburn, CM and Rozgonyi, GA}, year={1999}, month={May}, pages={1925–1928} }