Kevin Lloyd Beaman

Rozgonyi, G. A., Glasko, J. M., Beaman, K. L., & Koveshnikov, S. V. (2000, March 15). Gettering issues using MeV ion implantation. MATERIALS SCIENCE AND ENGINEERING B-SOLID STATE MATERIALS FOR ADVANCED TECHNOLOGY, Vol. 72, pp. 87–92. https://doi.org/10.1016/s0921-5107(99)00506-1

Beaman, K. L., Glasko, J. M., Koveshnikov, S. V., & Rozgonyi, G. A. (1999). Gettering at vacancy and interstitial-rich regions in MeV ion implanted silicon. Diffusion and Defect Data. [Pt. B], Solid State Phenomena, 70(1999), 247–252.

Beaman, K. L., Kononchuk, O., Koveshnikov, S., Osburn, C. M., & Rozgonyi, G. A. (1999). Lateral gettering of Fe on bulk and silicon-on-insulator wafers. JOURNAL OF THE ELECTROCHEMICAL SOCIETY, 146(5), 1925–1928. https://doi.org/10.1149/1.1391867