@article{brown_boney_matthews_srinivasan_schetzina_nohava_yang_krishnankutty_2000, title={UV-specific (320-365 nm) digital camera based on a 128x128 focal plane array of GaN/AlGaN p-i-n photodiodes}, volume={5}, DOI={10.1557/s1092578300000065}, abstractNote={An ultraviolet-specific (320-365 nm) digital camera based on a 128×128 array of backside-illuminated GaN/AlGaN p-i-n photodiodes has been successfully developed. The diode structure consists of a base n-type layer of AlGaN (~23% Al) followed by undoped and then p-type GaN layers deposited by metal organic vapor phase epitaxy. Double-side polished sapphire wafers serve as transparent substrates. Standard photolithographic, etching, and metallization procedures were employed to fabricate the devices. The fully-processed photodiode array was hybridized to a silicon readout integrated circuit (ROIC) using In bump bonds for electrical contact. The UV camera was operated at room temperature at frame rates ranging from 15 to 240 Hz. A variety of UV scenes were successfully recorded with this configuration.}, number={6}, journal={MRS Internet Journal of Nitride Semiconductor Research}, author={Brown, J. D. and Boney, J. and Matthews, J. and Srinivasan, P. and Schetzina, J. F. and Nohava, T. and Yang, W. and Krishnankutty, S.}, year={2000}, pages={1–12} }
 @article{brown_yu_matthews_harney_boney_schetzina_benson_dang_terrill_nohava_et al._1999, title={Visible-blind UV digital camera based on a 32 x 32 array of GaN/AlGaN p-i-n photodiodes}, volume={4}, DOI={10.1557/s109257830000065x}, abstractNote={A visible-blind UV camera based on a 32 × 32 array of backside-illuminated GaN/AlGaN p-i-n photodiodes has been successfully demonstrated. Each of the 1024 photodiodes in the array consists of a base n-type layer of AlGaN (~20%) onto which an undoped GaN layer followed by a p-type GaN layer is deposited by metallorganic vapor phase epitaxy. Double-side polished sapphire wafers are used as transparent substrates. Standard photolithographic, etching, and metallization procedures were employed to obtain fully-processed devices. The photodiode array was hybridized to a silicon readout integrated circuit using In bump bonds. Output from the UV camera was recorded at room temperature at a frame rate of 30 Hz. This new type of visible-blind digital camera is sensitive to radiation from 320 nm to 365 nm in the UV spectral region.}, number={9}, journal={MRS Internet Journal of Nitride Semiconductor Research}, author={Brown, J. D. and Yu, Z. H. and Matthews, J. and Harney, S. and Boney, J. and Schetzina, J. F. and Benson, J. D. and Dang, K. W. and Terrill, C. and Nohava, T. and et al.}, year={1999}, pages={1–10} }