@article{bray_zhao_kordas_wise_robinson_rozgonyi_2005, title={Electrical, structural, and chemical analysis of defects in epitaxial SiGe-based heterostructures}, volume={152}, number={5}, journal={Journal of the Electrochemical Society}, author={Bray, K. R. and Zhao, W. and Kordas, L. and Wise, R. and Robinson, M. and Rozgonyi, G.}, year={2005}, pages={C310–315} }
 @article{bray_gupta_parsons_2002, title={Effect of hydrogen on adsorbed precursor diffusion kinetics during hydrogenated amorphous silicon deposition}, volume={80}, url={http://gateway.webofknowledge.com/gateway/Gateway.cgi?GWVersion=2&SrcAuth=ORCID&SrcApp=OrcidOrg&DestLinkType=FullRecord&DestApp=WOS_CPL&KeyUT=WOS:000174623300040&KeyUID=WOS:000174623300040}, DOI={10.1063/1.1467616}, abstractNote={Fractal analysis of the surface topography is used to study the effects of hydrogen dilution on the surface transport kinetics during the plasma deposition of hydrogenated amorphous silicon. Images obtained from atomic force microscopy are examined using dimensional fractal analysis, and surface diffusion lengths of growth precursors are estimated from the measured correlation lengths. The addition of small amounts of hydrogen (H2/SiH4 ratios <10/1) during deposition leads to a decrease in the diffusion length, but larger hydrogen dilutions result in increased diffusion length. Moreover, the measured surface diffusion activation barrier is reduced from 0.20 eV for deposition from pure SiH4 to 0.13 eV with high hydrogen dilution. Results are consistent with recent models for precursor surface transport during low-temperature deposition, and give insight into critical processes for low-temperature silicon crystallization.}, number={13}, journal={Applied Physics Letters}, author={Bray, KR and Gupta, A and Parsons, Gregory}, year={2002}, pages={2356–2358} }
 @article{bray_parsons_2002, title={Surface transport kinetics in low-temperature silicon deposition determined from topography evolution}, volume={65}, ISSN={["2469-9969"]}, url={http://gateway.webofknowledge.com/gateway/Gateway.cgi?GWVersion=2&SrcAuth=ORCID&SrcApp=OrcidOrg&DestLinkType=FullRecord&DestApp=WOS_CPL&KeyUT=WOS:000173448900070&KeyUID=WOS:000173448900070}, DOI={10.1103/physrevb.65.035311}, abstractNote={In this article, surface transport kinetics during low-temperature silicon thin film deposition are characterized using time dependent surface topography and dynamic scaling models. Analysis of surface morphology indicates that diffusion of adsorbed species dominates surface transport, with a characteristic diffusion length that increases with surface temperature. A diffusion activation barrier of ∼0.2 eV is obtained, consistent with hydrogen-mediated adspecies diffusion on the growth silicon surface. Samples are compared over a range of deposition temperatures (25 to 350°C) and film thickness (20 to 5000 A) deposited using silane with helium or argon dilution, on glass and silicon substrates. Self-similar surface structure is found to depend on detailed film growth conditions, but is independent of film thickness after nuclei coalescence. For films deposited using helium dilution, static and dynamic scaling parameters are consistent with self-similar fractal geometry scaling, and the lateral correlation length increases from 45 to 150 nm as temperature increases from 25 to 150 °C. These results are discussed in relation to current silicon deposition models and with topography evolution observed during low temperature growth of other amorphous material systems.}, number={3}, journal={PHYSICAL REVIEW B}, author={Bray, KR and Parsons, GN}, year={2002}, month={Jan} }