Jeffrey David Brown

Continuous body dynamics and the Mathisson-Papapetrou-Dixon equations

Physical Review D, 95(4).

Numerical simulations with a first-order BSSN formulation of Einstein's field equations

Physical Review. D, Particles, Fields, Gravitation, and Cosmology, 85(8).

Oppenheimer-Snyder collapse in moving-puncture coordinates

Classical and Quantum Gravity, 29(1).

Action principle for the generalized harmonic formulation of general relativity

Physical Review. D, Particles, Fields, Gravitation, and Cosmology, 84(8).

Trumpet slices of the Schwarzschild-Tangherlini spacetime

Physical Review. D, Particles, Fields, Gravitation, and Cosmology, 82(12).

Covariant formulations of Baumgarte, Shapiro, Shibata, and Nakamura and the standard gauge

Physical Review. D, Particles, Fields, Gravitation, and Cosmology, 79(10).

Probing the puncture for black hole simulations

PHYSICAL REVIEW D, 80(8).

Gallium nitride material transistors and methods associated with the same

Washington, DC: U.S. Patent and Trademark Office.

Puncture evolution of Schwarzschild black holes

Physical Review. D, Particles, Fields, Gravitation, and Cosmology, 77(4).

Solar-blind AlGaN heterostructure photodiodes

MRS Internet Journal of Nitride Semiconductor Research, 5(9), 1–7.

UV-specific (320-365 nm) digital camera based on a 128x128 focal plane array of GaN/AlGaN p-i-n photodiodes

MRS Internet Journal of Nitride Semiconductor Research, 5(6), 1–12.

A critical comparison between MOVPE and MBE growth of III-V nitride semiconductor materials for opto-electronic device applications

MRS Internet Journal of Nitride Semiconductor Research, 4S1(G5.10).

Absorption coefficient and refractive index of GaN, AlN and AlGaN alloys

MRS Internet Journal of Nitride Semiconductor Research, 4S1(G5.2).

Epitaxial lateral overgrowth of GaN on SiC and sapphire substrates

MRS Internet Journal of Nitride Semiconductor Research, 4S1(G4.3).

Scanning electron microscopy and cathodoluminescence study of the epitaxial lateral overgrowth (ELO) process for gallium nitride

Johnson, M. A. L., Yu, Z. H., Brown, J. D., El-Masry, N. A., Cook, J. W., & Schetzina, J. F. (1999, March). JOURNAL OF ELECTRONIC MATERIALS, Vol. 28, pp. 295–300.

Visible-blind UV digital camera based on a 32 x 32 array of GaN/AlGaN p-i-n photodiodes

MRS Internet Journal of Nitride Semiconductor Research, 4(9), 1–10.

Molecular beam epitaxy growth and properties of GaN, InGaN, and GaN/InGaN quantum well structures

JOURNAL OF VACUUM SCIENCE & TECHNOLOGY B, Vol. 16, pp. 1282–1285.

Study of the epitaxial-lateral-overgrowth (ELO) process for GaN on sapphire

Yu, Z. H., Johnson, M. A. L., Brown, J. D., El-Masry, N. A., Cook, J. W., & Schetzina, J. F. (1998, December). JOURNAL OF CRYSTAL GROWTH, Vol. 195, pp. 333–339.

Pulsed operation lasing in a cleaved-facet InGaN/GaN MQW SCH laser grown on 6H-SiC

ELECTRONICS LETTERS, 33(18), 1556–1557.