Works (19)

Updated: July 5th, 2023 16:03

2017 journal article

Continuous body dynamics and the Mathisson-Papapetrou-Dixon equations

Physical Review D, 95(4).

By: S. Loomis & J. Brown

Source: NC State University Libraries
Added: August 6, 2018

2012 journal article

Numerical simulations with a first-order BSSN formulation of Einstein's field equations

Physical Review. D, Particles, Fields, Gravitation, and Cosmology, 85(8).

By: J. Brown, P. Diener, S. Field, J. Hesthaven, F. Herrmann, A. Mroue, O. Sarbach, E. Schnetter, M. Tiglio, M. Wagman

Source: NC State University Libraries
Added: August 6, 2018

2012 journal article

Oppenheimer-Snyder collapse in moving-puncture coordinates

Classical and Quantum Gravity, 29(1).

By: A. Staley, T. Baumgarte, J. Brown, B. Farris & S. Shapiro

Source: NC State University Libraries
Added: August 6, 2018

2011 journal article

Action principle for the generalized harmonic formulation of general relativity

Physical Review. D, Particles, Fields, Gravitation, and Cosmology, 84(8).

By: J. Brown

Source: NC State University Libraries
Added: August 6, 2018

2010 journal article

Trumpet slices of the Schwarzschild-Tangherlini spacetime

Physical Review. D, Particles, Fields, Gravitation, and Cosmology, 82(12).

By: K. Dennison, J. Wendell, T. Baumgarte & J. Brown

Source: NC State University Libraries
Added: August 6, 2018

2009 journal article

Covariant formulations of Baumgarte, Shapiro, Shibata, and Nakamura and the standard gauge

Physical Review. D, Particles, Fields, Gravitation, and Cosmology, 79(10).

By: J. Brown

Source: NC State University Libraries
Added: August 6, 2018

2009 journal article

Probing the puncture for black hole simulations

PHYSICAL REVIEW D, 80(8).

co-author countries: United States of America 🇺🇸
Sources: Web Of Science, ORCID
Added: August 6, 2018

2008 patent

Gallium nitride material transistors and methods associated with the same

Washington, DC: U.S. Patent and Trademark Office.

By: W. Nagy, R. Borges, J. Brown, A. Chaudhari, J. Cook, A. Hanson, J. Johnson, K. Linthicum ...

Source: NC State University Libraries
Added: August 6, 2018

2008 journal article

Puncture evolution of Schwarzschild black holes

Physical Review. D, Particles, Fields, Gravitation, and Cosmology, 77(4).

By: J. Brown

Source: NC State University Libraries
Added: August 6, 2018

2000 journal article

Solar-blind AlGaN heterostructure photodiodes

MRS Internet Journal of Nitride Semiconductor Research, 5(9), 1–7.

co-author countries: United States of America 🇺🇸
Source: NC State University Libraries
Added: August 6, 2018

2000 journal article

UV-specific (320-365 nm) digital camera based on a 128x128 focal plane array of GaN/AlGaN p-i-n photodiodes

MRS Internet Journal of Nitride Semiconductor Research, 5(6), 1–12.

By: J. Brown n, J. Boney n, J. Matthews n, P. Srinivasan n, J. Schetzina n, T. Nohava*, W. Yang*, S. Krishnankutty*

co-author countries: United States of America 🇺🇸
Source: NC State University Libraries
Added: August 6, 2018

1999 journal article

A critical comparison between MOVPE and MBE growth of III-V nitride semiconductor materials for opto-electronic device applications

MRS Internet Journal of Nitride Semiconductor Research, 4S1(G5.10).

By: M. Johnson n, Z. Yu n, J. Brown n, F. Koeck n, N. El-Masry n, H. Kong*, J. Edmond*, J. Cook n, J. Schetzina n

co-author countries: United States of America 🇺🇸
Source: NC State University Libraries
Added: August 6, 2018

1999 journal article

Absorption coefficient and refractive index of GaN, AlN and AlGaN alloys

MRS Internet Journal of Nitride Semiconductor Research, 4S1(G5.2).

By: J. Muth, J. Brown, M. Johnson, Z. Yu, R. Kolbas, J. Cook, J. Schetzina

Source: NC State University Libraries
Added: August 6, 2018

1999 journal article

Epitaxial lateral overgrowth of GaN on SiC and sapphire substrates

MRS Internet Journal of Nitride Semiconductor Research, 4S1(G4.3).

By: Z. Yu n, M. Johnson n, J. Brown n, N. El-Masry n, J. Muth n, J. Cook n, J. Schetzina n, K. Haberern*, H. Kong*, J. Edmond*

co-author countries: United States of America 🇺🇸
Source: NC State University Libraries
Added: August 6, 2018

1999 article

Scanning electron microscopy and cathodoluminescence study of the epitaxial lateral overgrowth (ELO) process for gallium nitride

Johnson, M. A. L., Yu, Z. H., Brown, J. D., El-Masry, N. A., Cook, J. W., & Schetzina, J. F. (1999, March). JOURNAL OF ELECTRONIC MATERIALS, Vol. 28, pp. 295–300.

co-author countries: United States of America 🇺🇸
author keywords: cathodoluminescence (CL); epitaxial lateral overgrowth (ELO); GaN; metalorganic vapor phase epitaxy (MOVPE)
Source: Web Of Science
Added: August 6, 2018

1999 journal article

Visible-blind UV digital camera based on a 32 x 32 array of GaN/AlGaN p-i-n photodiodes

MRS Internet Journal of Nitride Semiconductor Research, 4(9), 1–10.

By: J. Brown n, Z. Yu n, J. Matthews n, S. Harney n, J. Boney n, J. Schetzina n, J. Benson*, K. Dang* ...

co-author countries: United States of America 🇺🇸
Source: NC State University Libraries
Added: August 6, 2018

1998 article

Molecular beam epitaxy growth and properties of GaN, InGaN, and GaN/InGaN quantum well structures

JOURNAL OF VACUUM SCIENCE & TECHNOLOGY B, Vol. 16, pp. 1282–1285.

By: M. Johnson, J. Brown, N. El-Masry, J. Cook, J. Schetzina, H. Kong, J. Edmond

Source: Web Of Science
Added: August 6, 2018

1998 article

Study of the epitaxial-lateral-overgrowth (ELO) process for GaN on sapphire

Yu, Z. H., Johnson, M. A. L., Brown, J. D., El-Masry, N. A., Cook, J. W., & Schetzina, J. F. (1998, December). JOURNAL OF CRYSTAL GROWTH, Vol. 195, pp. 333–339.

By: Z. Yu n, M. Johnson n, J. Brown n, N. El-Masry n, J. Cook n & J. Schetzina n

co-author countries: United States of America 🇺🇸
author keywords: gallium nitride; MOVPE; epitaxial lateral overgrowth
Source: Web Of Science
Added: August 6, 2018

1997 journal article

Pulsed operation lasing in a cleaved-facet InGaN/GaN MQW SCH laser grown on 6H-SiC

ELECTRONICS LETTERS, 33(18), 1556–1557.

By: G. Bulman*, K. Doverspike*, S. Sheppard*, T. Weeks*, H. Kong*, H. Dieringer*, J. Edmond*, J. Brown n, J. Swindell n, J. Schetzina n

co-author countries: United States of America 🇺🇸
author keywords: semiconductor junction lasers; silicon carbide; semiconductor quantum wells
Source: Web Of Science
Added: August 6, 2018

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