2017 journal article
Continuous body dynamics and the Mathisson-Papapetrou-Dixon equations
Physical Review D, 95(4).
2012 journal article
Numerical simulations with a first-order BSSN formulation of Einstein's field equations
Physical Review. D, Particles, Fields, Gravitation, and Cosmology, 85(8).
2012 journal article
Oppenheimer-Snyder collapse in moving-puncture coordinates
Classical and Quantum Gravity, 29(1).
2011 journal article
Action principle for the generalized harmonic formulation of general relativity
Physical Review. D, Particles, Fields, Gravitation, and Cosmology, 84(8).
2010 journal article
Trumpet slices of the Schwarzschild-Tangherlini spacetime
Physical Review. D, Particles, Fields, Gravitation, and Cosmology, 82(12).
2009 journal article
Covariant formulations of Baumgarte, Shapiro, Shibata, and Nakamura and the standard gauge
Physical Review. D, Particles, Fields, Gravitation, and Cosmology, 79(10).
2009 journal article
Probing the puncture for black hole simulations
PHYSICAL REVIEW D, 80(8).
2008 patent
Gallium nitride material transistors and methods associated with the same
Washington, DC: U.S. Patent and Trademark Office.
2008 journal article
Puncture evolution of Schwarzschild black holes
Physical Review. D, Particles, Fields, Gravitation, and Cosmology, 77(4).
2000 journal article
Solar-blind AlGaN heterostructure photodiodes
MRS Internet Journal of Nitride Semiconductor Research, 5(9), 1–7.
2000 journal article
UV-specific (320-365 nm) digital camera based on a 128x128 focal plane array of GaN/AlGaN p-i-n photodiodes
MRS Internet Journal of Nitride Semiconductor Research, 5(6), 1–12.
1999 journal article
A critical comparison between MOVPE and MBE growth of III-V nitride semiconductor materials for opto-electronic device applications
MRS Internet Journal of Nitride Semiconductor Research, 4S1(G5.10).
1999 journal article
Absorption coefficient and refractive index of GaN, AlN and AlGaN alloys
MRS Internet Journal of Nitride Semiconductor Research, 4S1(G5.2).
1999 journal article
Epitaxial lateral overgrowth of GaN on SiC and sapphire substrates
MRS Internet Journal of Nitride Semiconductor Research, 4S1(G4.3).
1999 article
Scanning electron microscopy and cathodoluminescence study of the epitaxial lateral overgrowth (ELO) process for gallium nitride
Johnson, M. A. L., Yu, Z. H., Brown, J. D., El-Masry, N. A., Cook, J. W., & Schetzina, J. F. (1999, March). JOURNAL OF ELECTRONIC MATERIALS, Vol. 28, pp. 295–300.
1999 journal article
Visible-blind UV digital camera based on a 32 x 32 array of GaN/AlGaN p-i-n photodiodes
MRS Internet Journal of Nitride Semiconductor Research, 4(9), 1–10.
1998 article
Molecular beam epitaxy growth and properties of GaN, InGaN, and GaN/InGaN quantum well structures
JOURNAL OF VACUUM SCIENCE & TECHNOLOGY B, Vol. 16, pp. 1282–1285.
1998 article
Study of the epitaxial-lateral-overgrowth (ELO) process for GaN on sapphire
Yu, Z. H., Johnson, M. A. L., Brown, J. D., El-Masry, N. A., Cook, J. W., & Schetzina, J. F. (1998, December). JOURNAL OF CRYSTAL GROWTH, Vol. 195, pp. 333–339.
1997 journal article
Pulsed operation lasing in a cleaved-facet InGaN/GaN MQW SCH laser grown on 6H-SiC
ELECTRONICS LETTERS, 33(18), 1556–1557.
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