@article{loomis_brown_2017, title={Continuous body dynamics and the Mathisson-Papapetrou-Dixon equations}, volume={95}, number={4}, journal={Physical Review D}, author={Loomis, S. P. and Brown, J. D.}, year={2017} }
 @article{brown_diener_field_hesthaven_herrmann_mroue_sarbach_schnetter_tiglio_wagman_2012, title={Numerical simulations with a first-order BSSN formulation of Einstein's field equations}, volume={85}, number={8}, journal={Physical Review. D, Particles, Fields, Gravitation, and Cosmology}, author={Brown, J. D. and Diener, P. and Field, S. E. and Hesthaven, J. S. and Herrmann, F. and Mroue, A. H. and Sarbach, O. and Schnetter, E. and Tiglio, M. and Wagman, M.}, year={2012} }
 @article{staley_baumgarte_brown_farris_shapiro_2012, title={Oppenheimer-Snyder collapse in moving-puncture coordinates}, volume={29}, number={1}, journal={Classical and Quantum Gravity}, author={Staley, A. N. and Baumgarte, T. W. and Brown, J. D. and Farris, B. and Shapiro, S. L.}, year={2012} }
 @article{brown_2011, title={Action principle for the generalized harmonic formulation of general relativity}, volume={84}, number={8}, journal={Physical Review. D, Particles, Fields, Gravitation, and Cosmology}, author={Brown, J. D.}, year={2011} }
 @article{dennison_wendell_baumgarte_brown_2010, title={Trumpet slices of the Schwarzschild-Tangherlini spacetime}, volume={82}, number={12}, journal={Physical Review. D, Particles, Fields, Gravitation, and Cosmology}, author={Dennison, K. A. and Wendell, J. P. and Baumgarte, T. W. and Brown, J. D.}, year={2010} }
 @article{brown_2009, title={Covariant formulations of Baumgarte, Shapiro, Shibata, and Nakamura and the standard gauge}, volume={79}, number={10}, journal={Physical Review. D, Particles, Fields, Gravitation, and Cosmology}, author={Brown, J. D.}, year={2009} }
 @article{brown_2009, title={Probing the puncture for black hole simulations}, volume={80}, ISSN={["1550-2368"]}, url={http://inspirehep.net/record/829536}, DOI={10.1103/PhysRevD.80.084042}, abstractNote={With the puncture method for black hole simulations, the second infinity of a wormhole geometry is compactified to a single ``puncture point'' on the computational grid. The region surrounding the puncture quickly evolves to a trumpet geometry. The computational grid covers only a portion of the trumpet throat. It ends at a boundary whose location depends on resolution. This raises the possibility that perturbations in the trumpet geometry could propagate down the trumpet throat, reflect from the puncture boundary, and return to the black hole exterior with a resolution-dependent time delay. Such pathological behavior is not observed. This is explained by the observation that some perturbative modes propagate in the conformal geometry, others propagate in the physical geometry. The puncture boundary exists only in the physical geometry. The modes that propagate in the physical geometry are always directed away from the computational domain at the puncture boundary. The finite difference stencils ensure that these modes are advected through the boundary with no coupling to the modes that propagate in the conformal geometry. These results are supported by numerical experiments with a code that evolves spherically symmetric gravitational fields with standard Cartesian finite difference stencils. The code uses the Baumgarte-Shapiro-Shibata-Nakamura formulation of Einstein's equations with $1+\mathrm{log}$ slicing and gamma-driver shift conditions.}, number={8}, journal={PHYSICAL REVIEW D}, author={Brown, J. David}, year={2009}, month={Oct} }
 @misc{nagy_borges_brown_chaudhari_cook_hanson_johnson_linthicum_piner_rajagopal_et al._2008, title={Gallium nitride material transistors and methods associated with the same}, volume={7,352,016}, number={2008 Apr. 1}, publisher={Washington, DC: U.S. Patent and Trademark Office}, author={Nagy, W. H. and Borges, R. M. and Brown, J. D. and Chaudhari, A. D. and Cook, J. W. and Hanson, A. W. and Johnson, J. W. and Linthicum, K. J. and Piner, E. L. and Rajagopal, P. and et al.}, year={2008} }
 @article{brown_2008, title={Puncture evolution of Schwarzschild black holes}, volume={77}, number={4}, journal={Physical Review. D, Particles, Fields, Gravitation, and Cosmology}, author={Brown, J. D.}, year={2008} }
 @article{brown_li_srinivasan_matthews_schetzina_2000, title={Solar-blind AlGaN heterostructure photodiodes}, volume={5}, DOI={10.1557/s1092578300000090}, abstractNote={A backside-illuminated solar-blind UV detector based on an AlGaN p-i-n heterostructure has been successfully synthesized, fabricated and tested. The p-i-n photodiode structure consists of a 1.0 μm n-type Al0.64Ga0.36N:Si layer grown by MOVPE onto a low temperature AlN buffer layer on a polished sapphire substrate. On top of this base layer is a 0.2 μm undoped Al0.47Ga0.53N active layer and a 0.5 μm p-type Al0.47Ga0.53N:Mg top layer. Square mesas of area A = 4 × 10−4 cm2 were obtained by reactive ion etching using BCl3. The solar-blind photodiode exhibits a very narrow UV spectral responsivity band peaked at 273 nm with a FWHM = 21 nm. Maximum responsivity R = 0.051 A/W at 273 nm, corresponding to an internal quantum efficiency of 27%. R0A values up to 8 × 107Ω-cm2 were obtained, corresponding to D* = 3.5 × 1012 cm Hz1/2W−1 at 273 nm.}, number={9}, journal={MRS Internet Journal of Nitride Semiconductor Research}, author={Brown, J. D. and Li, J. Z. and Srinivasan, P. and Matthews, J. and Schetzina, J. F.}, year={2000}, pages={1–7} }
 @article{brown_boney_matthews_srinivasan_schetzina_nohava_yang_krishnankutty_2000, title={UV-specific (320-365 nm) digital camera based on a 128x128 focal plane array of GaN/AlGaN p-i-n photodiodes}, volume={5}, DOI={10.1557/s1092578300000065}, abstractNote={An ultraviolet-specific (320-365 nm) digital camera based on a 128×128 array of backside-illuminated GaN/AlGaN p-i-n photodiodes has been successfully developed. The diode structure consists of a base n-type layer of AlGaN (~23% Al) followed by undoped and then p-type GaN layers deposited by metal organic vapor phase epitaxy. Double-side polished sapphire wafers serve as transparent substrates. Standard photolithographic, etching, and metallization procedures were employed to fabricate the devices. The fully-processed photodiode array was hybridized to a silicon readout integrated circuit (ROIC) using In bump bonds for electrical contact. The UV camera was operated at room temperature at frame rates ranging from 15 to 240 Hz. A variety of UV scenes were successfully recorded with this configuration.}, number={6}, journal={MRS Internet Journal of Nitride Semiconductor Research}, author={Brown, J. D. and Boney, J. and Matthews, J. and Srinivasan, P. and Schetzina, J. F. and Nohava, T. and Yang, W. and Krishnankutty, S.}, year={2000}, pages={1–12} }
 @article{johnson_yu_brown_koeck_el-masry_kong_edmond_cook_schetzina_1999, title={A critical comparison between MOVPE and MBE growth of III-V nitride semiconductor materials for opto-electronic device applications}, volume={4S1}, DOI={10.1557/s1092578300003100}, abstractNote={A systematic study of the growth and doping of GaN, AlGaN, and InGaN by both molecular beam epitaxy (MBE) and metal-organic vapor phase epitaxy (MOVPE) has been performed. Critical differences between the resulting epitaxy are observed in the p-type doping using magnesium as the acceptor species. MBE growth, using rf-plasma sources to generate the active nitrogen species for growth, has been used for III-Nitride compounds doped either n-type with silicon or p-type with magnesium. Blue and violet light emitting diode (LED) test structures were fabricated. These vertical devices required a relatively high forward current and exhibited high leakage currents. This behavior was attributed to parallel shorting mechanisms along the dislocations in MBE grown layers. For comparison, similar devices were fabricated using a single wafer vertical flow MOVPE reactor and ammonia as the active nitrogen species. MOVPE grown blue LEDs exhibited excellent forward device characteristics and a high reverse breakdown voltage. We feel that the excess hydrogen, which is present on the GaN surface due to the dissociation of ammonia in MOVPE, acts to passivate the dislocations and eliminate parallel shorting for vertical device structures. These findings support the widespread acceptance of MOVPE, rather than MBE, as the epitaxial growth technique of choice for III-V nitride materials used in vertical transport bipolar devices for optoelectronic applications.}, number={G5.10}, journal={MRS Internet Journal of Nitride Semiconductor Research}, author={Johnson, M. A. L. and Yu, Z. H. and Brown, J. D. and Koeck, F. A. and El-Masry, N. A. and Kong, H. S. and Edmond, J. A. and Cook, J. W. and Schetzina, J. F.}, year={1999} }
 @article{muth_brown_johnson_yu_kolbas_cook_schetzina_1999, title={Absorption coefficient and refractive index of GaN, AlN and AlGaN alloys}, volume={4S1}, number={G5.2}, journal={MRS Internet Journal of Nitride Semiconductor Research}, author={Muth, J. F. and Brown, J. D. and Johnson, M. A. L. and Yu, Z. H. and Kolbas, R. M. and Cook, J. W. and Schetzina, J. F.}, year={1999} }
 @article{yu_johnson_brown_el-masry_muth_cook_schetzina_haberern_kong_edmond_1999, title={Epitaxial lateral overgrowth of GaN on SiC and sapphire substrates}, volume={4S1}, DOI={10.1557/s1092578300002878}, abstractNote={The epitaxial lateral overgrowth (ELO) process for GaN has been studied using SiC and sapphire substrates. Both MBE and MOVPE growth processes were employed in the study. The use of SiO2 versus SiNx insulator stripes was investigated using window/stripe widths ranging from 20 μm/4 μm to 3 μm/15 μm. GaN film depositions were completed at temperatures ranging from 800 °C to 1120 °C. Characterization experiments included RHEED, TEM, SEM and cathodolumenescence studies. The MBE growth experiments produced polycrystalline GaN over the insulator stripes even at deposition temperatures as high as 990 °C. In contrast, MOVPE growth produced single-crystal GaN stripes with no observable threading dislocations.}, number={G4.3}, journal={MRS Internet Journal of Nitride Semiconductor Research}, author={Yu, Z. H. and Johnson, M. A. L. and Brown, J. D. and El-Masry, N. A. and Muth, J. F. and Cook, J. W. and Schetzina, J. F. and Haberern, K. W. and Kong, H. S. and Edmond, J. S.}, year={1999} }
 @article{johnson_yu_brown_el-masry_cook_schetzina_1999, title={Scanning electron microscopy and cathodoluminescence study of the epitaxial lateral overgrowth (ELO) process for gallium nitride}, volume={28}, ISSN={["0361-5235"]}, DOI={10.1007/s11664-999-0030-1}, number={3}, journal={JOURNAL OF ELECTRONIC MATERIALS}, author={Johnson, MAL and Yu, ZH and Brown, JD and El-Masry, NA and Cook, JW and Schetzina, JF}, year={1999}, month={Mar}, pages={295–300} }
 @article{brown_yu_matthews_harney_boney_schetzina_benson_dang_terrill_nohava_et al._1999, title={Visible-blind UV digital camera based on a 32 x 32 array of GaN/AlGaN p-i-n photodiodes}, volume={4}, DOI={10.1557/s109257830000065x}, abstractNote={A visible-blind UV camera based on a 32 × 32 array of backside-illuminated GaN/AlGaN p-i-n photodiodes has been successfully demonstrated. Each of the 1024 photodiodes in the array consists of a base n-type layer of AlGaN (~20%) onto which an undoped GaN layer followed by a p-type GaN layer is deposited by metallorganic vapor phase epitaxy. Double-side polished sapphire wafers are used as transparent substrates. Standard photolithographic, etching, and metallization procedures were employed to obtain fully-processed devices. The photodiode array was hybridized to a silicon readout integrated circuit using In bump bonds. Output from the UV camera was recorded at room temperature at a frame rate of 30 Hz. This new type of visible-blind digital camera is sensitive to radiation from 320 nm to 365 nm in the UV spectral region.}, number={9}, journal={MRS Internet Journal of Nitride Semiconductor Research}, author={Brown, J. D. and Yu, Z. H. and Matthews, J. and Harney, S. and Boney, J. and Schetzina, J. F. and Benson, J. D. and Dang, K. W. and Terrill, C. and Nohava, T. and et al.}, year={1999}, pages={1–10} }
 @article{johnson_brown_el-masry_cook_schetzina_kong_edmond_1998, title={Molecular beam epitaxy growth and properties of GaN, InGaN, and GaN/InGaN quantum well structures}, volume={16}, ISSN={["1071-1023"]}, DOI={10.1116/1.590000}, abstractNote={Growth of III–V nitrides by molecular beam epitaxy (MBE) was studied using rf nitrogen plasma sources. Plasma sources from three different vendors have been tested. All three of the sources have been used to grow high quality GaN. However, the EPI rf source produces an optical emission spectrum that is very rich in the active nitrogen species of 1st-positive excited nitrogen molecules and nitrogen atoms. GaN growth rates at 800 °C of 1 μm/h have been achieved using this source. The MBE-grown GaN films are deposited homoepitaxially on high quality metalorganic vapor phase epitaxy-grown GaN/SiC substrates. With the growth conditions for high quality undoped GaN as a base line, a detailed study of Mg doping for p-type GaN was performed. An acceptor incorporation of 2×1019 cm−3 was measured by both capacitance–voltage and secondary ion mass spectroscopy for a doping source temperature of 290 °C. However, a faceted three-dimensional growth mode was observed by reflection high energy electron diffraction during Mg doping of GaN. Additional studies suggest an interdependence between Mg incorporation and growth surface morphology. Quantum well structures made from the InGaN ternary alloy were grown using a modulated beam MBE method. With this technique, quantum well compositions were controllable, grown with visible luminescence ranging from 400 to 515 nm depending on indium mole fraction. Light emitting diode test structures, combining Mg p-type doping with InGaN quantum wells, were fabricated and tested.}, number={3}, journal={JOURNAL OF VACUUM SCIENCE & TECHNOLOGY B}, author={Johnson, MAL and Brown, JD and El-Masry, NA and Cook, JW and Schetzina, JF and Kong, HS and Edmond, JA}, year={1998}, pages={1282–1285} }
 @article{yu_johnson_brown_el-masry_cook_schetzina_1998, title={Study of the epitaxial-lateral-overgrowth (ELO) process for GaN on sapphire}, volume={195}, ISSN={["0022-0248"]}, DOI={10.1016/S0022-0248(98)00638-1}, abstractNote={Growth of GaN by MOVPE on mismatched substrates such as sapphire and SiC produces a columnar material consisting of many hexagonal grains ∼0.2–1.0 μm in diameter. However, the epitaxial–lateral-overgrowth (ELO) process for GaN creates a new material – single-crystal GaN. We have studied the ELO process using a MOVPE reactor featuring vertical gas flows and fast substrate rotation to synthesize GaN ELO samples. Characterization experiments consisted of plan-view scanning electron microscopy and vertical-cross-section transmission electron microscopy studies, which disclosed a large reduction in dislocations in the ELO regions of the GaN samples. Panchromatic and monochromatic cathodoluminescence images and spectra were employed to study the spatial variation of the optical properties of the GaN ELO samples.}, number={1-4}, journal={JOURNAL OF CRYSTAL GROWTH}, author={Yu, ZH and Johnson, MAL and Brown, JD and El-Masry, NA and Cook, JW and Schetzina, JF}, year={1998}, month={Dec}, pages={333–339} }
 @article{bulman_doverspike_sheppard_weeks_kong_dieringer_edmond_brown_swindell_schetzina_1997, title={Pulsed operation lasing in a cleaved-facet InGaN/GaN MQW SCH laser grown on 6H-SiC}, volume={33}, ISSN={["0013-5194"]}, DOI={10.1049/el:19971025}, abstractNote={Room temperature pulsed-operation lasing has been achieved for the first time in an InGaN laser grown on a 6H-SiC substrate. The laser structure is an 8-well InGaN/GaN MQW having Al0.06Ga0.94N waveguide and Al0.13Ga0.87N cladding layers. The index-guided laser having uncoated cleaved facets emits at 402 nm with a threshold current Ith of 1.2 A (42V), corresponding to a current density of 48 kA/cm2. A narrow line width of 0.8 A is observed at 1.09 Ith. Far field measurements indicate that the devices operate in the TEM01 mode with FWHP of 5.7 and 19° for the in-plane and perpendicular directions, respectively.}, number={18}, journal={ELECTRONICS LETTERS}, author={Bulman, GE and Doverspike, K and Sheppard, ST and Weeks, TW and Kong, HS and Dieringer, HM and Edmond, JA and Brown, JD and Swindell, JT and Schetzina, JF}, year={1997}, month={Aug}, pages={1556–1557} }