Jeffrey David Brown

Loomis, S. P., & Brown, J. D. (2017). Continuous body dynamics and the Mathisson-Papapetrou-Dixon equations. Physical Review D, 95(4).

Brown, J. D., Diener, P., Field, S. E., Hesthaven, J. S., Herrmann, F., Mroue, A. H., … Wagman, M. (2012). Numerical simulations with a first-order BSSN formulation of Einstein's field equations. Physical Review. D, Particles, Fields, Gravitation, and Cosmology, 85(8).

Staley, A. N., Baumgarte, T. W., Brown, J. D., Farris, B., & Shapiro, S. L. (2012). Oppenheimer-Snyder collapse in moving-puncture coordinates. Classical and Quantum Gravity, 29(1).

Brown, J. D. (2011). Action principle for the generalized harmonic formulation of general relativity. Physical Review. D, Particles, Fields, Gravitation, and Cosmology, 84(8).

Dennison, K. A., Wendell, J. P., Baumgarte, T. W., & Brown, J. D. (2010). Trumpet slices of the Schwarzschild-Tangherlini spacetime. Physical Review. D, Particles, Fields, Gravitation, and Cosmology, 82(12).

Brown, J. D. (2009). Covariant formulations of Baumgarte, Shapiro, Shibata, and Nakamura and the standard gauge. Physical Review. D, Particles, Fields, Gravitation, and Cosmology, 79(10).

Brown, J. D. (2009). Probing the puncture for black hole simulations. PHYSICAL REVIEW D, 80(8). https://doi.org/10.1103/PhysRevD.80.084042

Nagy, W. H., Borges, R. M., Brown, J. D., Chaudhari, A. D., Cook, J. W., Hanson, A. W., … Vescan, A. (2008). Gallium nitride material transistors and methods associated with the same. Washington, DC: U.S. Patent and Trademark Office.

Brown, J. D. (2008). Puncture evolution of Schwarzschild black holes. Physical Review. D, Particles, Fields, Gravitation, and Cosmology, 77(4).

Brown, J. D., Li, J. Z., Srinivasan, P., Matthews, J., & Schetzina, J. F. (2000). Solar-blind AlGaN heterostructure photodiodes. MRS Internet Journal of Nitride Semiconductor Research, 5(9), 1–7. https://doi.org/10.1557/s1092578300000090

Brown, J. D., Boney, J., Matthews, J., Srinivasan, P., Schetzina, J. F., Nohava, T., … Krishnankutty, S. (2000). UV-specific (320-365 nm) digital camera based on a 128x128 focal plane array of GaN/AlGaN p-i-n photodiodes. MRS Internet Journal of Nitride Semiconductor Research, 5(6), 1–12. https://doi.org/10.1557/s1092578300000065

Johnson, M. A. L., Yu, Z. H., Brown, J. D., Koeck, F. A., El-Masry, N. A., Kong, H. S., … Schetzina, J. F. (1999). A critical comparison between MOVPE and MBE growth of III-V nitride semiconductor materials for opto-electronic device applications. MRS Internet Journal of Nitride Semiconductor Research, 4S1(G5.10). https://doi.org/10.1557/s1092578300003100

Muth, J. F., Brown, J. D., Johnson, M. A. L., Yu, Z. H., Kolbas, R. M., Cook, J. W., & Schetzina, J. F. (1999). Absorption coefficient and refractive index of GaN, AlN and AlGaN alloys. MRS Internet Journal of Nitride Semiconductor Research, 4S1(G5.2).

Yu, Z. H., Johnson, M. A. L., Brown, J. D., El-Masry, N. A., Muth, J. F., Cook, J. W., … Edmond, J. S. (1999). Epitaxial lateral overgrowth of GaN on SiC and sapphire substrates. MRS Internet Journal of Nitride Semiconductor Research, 4S1(G4.3). https://doi.org/10.1557/s1092578300002878

Johnson, M. A. L., Yu, Z. H., Brown, J. D., El-Masry, N. A., Cook, J. W., & Schetzina, J. F. (1999, March). Scanning electron microscopy and cathodoluminescence study of the epitaxial lateral overgrowth (ELO) process for gallium nitride. JOURNAL OF ELECTRONIC MATERIALS, Vol. 28, pp. 295–300. https://doi.org/10.1007/s11664-999-0030-1

Brown, J. D., Yu, Z. H., Matthews, J., Harney, S., Boney, J., Schetzina, J. F., … Krishnankutty, S. (1999). Visible-blind UV digital camera based on a 32 x 32 array of GaN/AlGaN p-i-n photodiodes. MRS Internet Journal of Nitride Semiconductor Research, 4(9), 1–10. https://doi.org/10.1557/s109257830000065x

Johnson, M. A. L., Brown, J. D., El-Masry, N. A., Cook, J. W., Schetzina, J. F., Kong, H. S., & Edmond, J. A. (1998). Molecular beam epitaxy growth and properties of GaN, InGaN, and GaN/InGaN quantum well structures. JOURNAL OF VACUUM SCIENCE & TECHNOLOGY B, Vol. 16, pp. 1282–1285. https://doi.org/10.1116/1.590000

Yu, Z. H., Johnson, M. A. L., Brown, J. D., El-Masry, N. A., Cook, J. W., & Schetzina, J. F. (1998, December). Study of the epitaxial-lateral-overgrowth (ELO) process for GaN on sapphire. JOURNAL OF CRYSTAL GROWTH, Vol. 195, pp. 333–339. https://doi.org/10.1016/S0022-0248(98)00638-1

Bulman, G. E., Doverspike, K., Sheppard, S. T., Weeks, T. W., Kong, H. S., Dieringer, H. M., … Schetzina, J. F. (1997). Pulsed operation lasing in a cleaved-facet InGaN/GaN MQW SCH laser grown on 6H-SiC. ELECTRONICS LETTERS, 33(18), 1556–1557. https://doi.org/10.1049/el:19971025