@article{smith_read_yang_srinivasan_courtney_lamb_parsons_1998, title={Plasma enhanced selective area microcrystalline silicon deposition on hydrogenated amorphous silicon: Surface modification for controlled nucleation}, volume={16}, url={http://gateway.webofknowledge.com/gateway/Gateway.cgi?GWVersion=2&SrcAuth=ORCID&SrcApp=OrcidOrg&DestLinkType=FullRecord&DestApp=WOS_CPL&KeyUT=WOS:000074150400079&KeyUID=WOS:000074150400079}, DOI={10.1116/1.581144}, abstractNote={Selective deposition of μc-Si on hydrogenated amorphous silicon is demonstrated using time-modulated silane reactant flow in a low temperature plasma enhanced process. Alternating cycles of thin silicon layer deposition and atomic hydrogen exposure result in silicon layers on receptive surfaces, with no net deposition on nonreceptive areas of the substrate. Selective deposition could be useful to form self-aligned contacts in hydrogenated amorphous silicon (a-Si:H transistor applications. However, a problem commonly observed in low temperature selective deposition is that the selective process tends to etch amorphous silicon, harming the devices. We describe a technique involving Mo metallization that stabilizes the a-Si:H surface with respect to hydrogen plasma exposure and allows selective μc-Si deposition on a-Si:H in device structures, while avoiding deposition on the top SiNx insulator material. Surfaces and subsequent selective nucleation and growth were characterized using atomic force microscopy, x-ray photoelectron spectroscopy, and Auger electron spectroscopy, which revealed the presence of Mo incorporation in the a-Si:H surface remaining after complete removal of the metal layer. A direct comparison of selective deposition experiments on films prepared with and without Mo treatment demonstrate that the metallization stabilizes nucleation of microcrystalline silicon on amorphous silicon surfaces.}, number={3}, journal={Journal of Vacuum Science & Technology a-Vacuum Surfaces and Films}, author={Smith, LL and Read, WW and Yang, CS and Srinivasan, E and Courtney, CH and Lamb, HH and Parsons, Gregory}, year={1998}, pages={1316–1320} }
 @article{courtney_smith_lamb_1998, title={Remote plasma-enhanced chemical vapor deposition of SiO2 using Ar/N2O and SiH4}, volume={145}, ISSN={["0013-4651"]}, DOI={10.1149/1.1838898}, abstractNote={Remote plasma-enhanced chemical vapor deposition of SiO 2 using a radio-frequency (rf) Ar/N 2 O plasma and downstream-injected SiH 4 was investigated. The deposition rate at 20 W rf power was measured as a function of pressure, temperature, and SiH 4 flow rate. The SiO 2 deposition rate at 300°C and 300 mTorr depends linearly on the SiH 4 flow rate. The deposition rate is independent of N 2 O flow rate for N 2 O/SiH 4 ratios much greater than 1, consistent with oxygen saturation of the growth surface. The deposition rate increases linearly with pressure up to 400 mTorr. A plateau in the deposition rate is observed above 400 mTorr, and is ascribed to the onset of parasitic gas-phase reactions leading to particle formation. Negative apparent activation energies are observed at pressures ≤400 mTorr, suggesting that adsorption of Si-bearing species is the rate-limiting step in SiO 2 deposition. The deposition chemistry was probed using real-time quadrupole mass spectrometry (QMS) and optical emission spectroscopy (OES). The H 2 + and H 2 O + QMS signal intensities increase monotonically with SiH 4 flow rate; approximately 0.67 moles of H 2 and 1.33 moles of H 2 O are produced per mole of SiH 4 consumed. OES evidences the presence of Ar metastables, N 2 metastables, excited NO molecules, and atomic O in the plasma. Fourier transform infrared spectroscopy of thick SiO 2 films demonstrated that Si-H and Si-OH groups are present at very low concentrations (<1 atom %). Single-wavelength ellipsometry indicated that films deposited under typical O-rich conditions have an average refractive index of 1.464.}, number={11}, journal={JOURNAL OF THE ELECTROCHEMICAL SOCIETY}, author={Courtney, CH and Smith, BC and Lamb, HH}, year={1998}, month={Nov}, pages={3957–3962} }