@misc{dunn_chelini_croswell_lessner_prevallet_prymak_2008, title={Embedded capacitors and methods for their fabrication and connection}, volume={7,361,568}, number={2008 Apr. 22}, publisher={Washington, DC: U.S. Patent and Trademark Office}, author={Dunn, G. J. and Chelini, R. J. and Croswell, R. T. and Lessner, P. M. and Prevallet, M. D. and Prymak, J. D.}, year={2008} }
 @article{kim_kingon_maria_croswell_2007, title={Lead zirconate titanate thin film capacitors on electroless nickel coated copper foils for embedded passive applications}, volume={515}, ISSN={["0040-6090"]}, DOI={10.1016/j.tsf.2007.02.085}, abstractNote={Lead zirconate titanate (PZT, 52/48) thin film capacitors were prepared on electroless Ni coated Cu foil by chemical solution deposition for printed wiring board embedded capacitor applications. Phase development, dielectric properties, and leakage characteristics of capacitors were investigated, in particular as a function of the process temperature. Dielectric properties of the capacitors were dependent on the crystallization temperature, and capacitance densities of more than 350 nF/cm2 and loss tangent of less than 0.03 were measured for capacitors crystallized below 600 °C. Lowest leakage current densities (around 2 × 10− 7 A/cm2 at 10 V direct current (DC)) and highest breakdown fields could be obtained for capacitors crystallized at 650 °C. Capacitors with different thickness and a two-layer capacitor model were used in analyzing the interface layer between PZT and the underlying electroless Ni. From the capacitance and leakage measurements, it is suggested that the interface reaction layer has low permittivity (K around 30) and high defect concentration, which has an important effect on the electrical properties of capacitors. This interface is from the reaction of the electroless nickel layer with the adjacent PZT, and may specifically be moderated by the nickel phosphide (Ni–P) phase, transformed from amorphous Ni during the annealing step. The results have significant implications for embedded capacitors in printed wiring boards. They demonstrate that the process can be tuned to produce either voltage independent capacitors with low leakage and high breakdown fields (above 30 V DC), or the more usual hysteretic, switching, ferroelectric capacitors with higher capacitance densities.}, number={18}, journal={THIN SOLID FILMS}, author={Kim, Taeyun and Kingon, Angus I. and Maria, Jon-Paul and Croswell, Robert T.}, year={2007}, month={Jun}, pages={7331–7336} }
 @misc{dunn_chilini_croswell_dean_gamboa_savic_2007, title={Printed circuit dielectric foil and embedded capacitors}, volume={7,193,838}, number={2007 Mar. 20}, publisher={Washington, DC: U.S. Patent and Trademark Office}, author={Dunn, G. J. and Chilini, R. J. and Croswell, R. T. and Dean, T. B. and Gamboa, C. V. and Savic, J.}, year={2007} }
 @misc{croswell_dunn_lempkowski_tungare_savic_2006, title={Printed circuit embedded capacitors}, volume={7,056,800}, number={2006 Jun. 6}, publisher={Washington, DC: U.S. Patent and Trademark Office}, author={Croswell, R. T. and Dunn, G. J. and Lempkowski, R. B. and Tungare, A. V. and Savic, J.}, year={2006} }
 @misc{dunn_croswell_magera_savic_tungare_2006, title={Printed circuit patterned embedded capacitance layer}, volume={7,138,068}, number={2006 Nov. 21}, publisher={Washington, DC: U.S. Patent and Trademark Office}, author={Dunn, G. J. and Croswell, R. T. and Magera, J. A. and Savic, J. and Tungare, A. V.}, year={2006} }
 @misc{lian_croswell_tungare_eliacin_2005, title={Organic semiconductor device and method}, volume={6,891,190}, number={2005 May 10}, publisher={Washington, DC: U.S. Patent and Trademark Office}, author={Lian, K. K. and Croswell, R. T. and Tungare, A. and Eliacin, M.}, year={2005} }
 @article{kim_kingon_maria_croswell_2004, title={Ca-doped lead zirconate titanate thin film capacitors on base metal nickel on copper foil}, volume={19}, ISSN={["0884-2914"]}, DOI={10.1557/jmr.2004.0387}, abstractNote={Ca-doped lead zirconate titanate (52/48) thin film capacitors were prepared on electroless nickel-coated copper foils for embedded capacitor applications. The impact of Ca doping and process parameter variations was studied. Ca addition significantly reduced the temperature coefficient of capacitance. Specifically, the temperature variation was reduced to less than 10% between 300 and 580 K through calcium addition. Optimized capacitance densities and loss tangents were 400 nF/cm2 and 0.02, respectively. Crystallization temperatures of 600 °C yielded these optimized electrical properties, while higher temperatures resulted in interfacial reactions. The influence of oxygen partial pressure during crystallization was also studied. Dielectric properties were sensitive to pO2, with optimal properties occurring in a narrow pO2 window centered about 10−3 Torr. The trends with oxygen pressure were mirrored by changes in phase assemblage. Electrical transport across the dielectric layers was not strongly dependent upon doping level. This insensitivity was attributed to a thin interfacial layer present in all samples. Interface analysis using equivalent circuit analogues showed the nature of the interface to be highly resistive (insulating), rather than semiconducting or conducting.}, number={10}, journal={JOURNAL OF MATERIALS RESEARCH}, author={Kim, T and Kingon, AI and Maria, JP and Croswell, RT}, year={2004}, month={Oct}, pages={2841–2848} }
 @misc{croswell_dunn_2003, title={Integration of monocrystalline oxide devices with fully depleted CMOS on non-silicon substrates}, volume={6,638,872}, number={2003 Oct. 28}, publisher={Washington, DC: U.S. Patent and Trademark Office}, author={Croswell, R. and Dunn, G.}, year={2003} }
 @misc{croswell_reisman_simpson_temple_williams_2001, title={Methods of raising reflow temperature of glass alloys by thermal treatment in steam, and microelectronic structures formed thereby}, volume={6,271,150}, number={2001 Aug. 7}, publisher={Washington, DC: U.S. Patent and Trademark Office}, author={Croswell, R. T. and Reisman, A. and Simpson, D. L. and Temple, D. and Williams, C. K.}, year={2001} }
 @article{simpson_croswell_reisman_williams_temple_2000, title={Deposition and characterization of undoped and boron and phosphorus doped (SixGe1-xO2) glass films}, volume={147}, ISSN={["0013-4651"]}, DOI={10.1149/1.1393394}, abstractNote={Glass films of undoped and boron and phosphorus doped GeO 2 -SiO 2 glass films were prepared by plasma enhanced chemical vapor deposition using germane, silane, phosphine, diborane, and oxygen as precursor gas sources with argon as a carrier gas. Film synthesis was carried out at 200°C using a dual-coil, inductively coupled plasma system. The presence of silane was not necessary to catalyze the decomposition of germane in the plasma environment as required in a strictly thermal environment. The index of refraction of undoped films changes linearly with SiO 2 composition, and deposition rate was nearly constant across all film compositions. Oxide film composition was determined using energy dispersive X-ray spectroscopy and Auger energy spectroscopy. For undoped films, solid-phase SiO 2 composition varied linearly with silane gas-phase composition. For doped compositions, phosphorus mole fraction in the solid phase was up to a factor of two greater than that present in the gas phase. In contrast to this, the quantity of boron incorporated into the solid phase was a factor of five to six less than present in the gas phase. When both dopants were present in the gas phase, the amount of each incorporated into the solid phase was similar to that in the gas phase.}, number={4}, journal={JOURNAL OF THE ELECTROCHEMICAL SOCIETY}, author={Simpson, DL and Croswell, RT and Reisman, A and Williams, CK and Temple, D}, year={2000}, month={Apr}, pages={1560–1567} }
 @article{wang_parker_hodge_croswell_yang_misra_hauser_2000, title={Effect of polysilicon gate type on the flatband voltage shift for ultrathin oxide-nitride gate stacks}, volume={21}, ISSN={["0741-3106"]}, DOI={10.1109/55.830971}, abstractNote={In this work, we demonstrate that the magnitude of flatband voltage (V/sub FB/) shift for ultrathin (<2 nm) silicon dioxide-silicon nitride (ON) gate stacks in MOSFET's depends on the Fermi level position in the gate material. In addition, a fixed positive charge at the oxide-nitride interface was observed.}, number={4}, journal={IEEE ELECTRON DEVICE LETTERS}, author={Wang, ZG and Parker, CG and Hodge, DW and Croswell, RT and Yang, N and Misra, V and Hauser, JR}, year={2000}, month={Apr}, pages={170–172} }
 @article{croswell_reisman_simpson_temple_williams_2000, title={Planarization processes and applications III. As-deposited and annealed film properties}, volume={147}, ISSN={["1945-7111"]}, DOI={10.1149/1.1393387}, abstractNote={Although germanosilicates with and without boron and phosphorus dopants have been shown to planarize over steps at temperatures below 800°C, other properties of the films, such as water solubility, electrical conductivity, and mechanical stress, are also concerns with these materials. This study examines these film properties for undoped and boron- and/or phosphorus-doped germanosilicate glasses deposited by plasma-enhanced chemical vapor deposition. Water solubility resistance was improved for most film compositions after anneals in argon, steam, forming gas, or two-step anneals in argon and steam or argon and forming gas. Electrical leakage and breakdown behavior was also found to improve in steam anneals and even further in two-step argon-steam anneals but leakage increased following forming gas anneals. Mechanical stress was found to generally increase in magnitude following argon anneals, but stress levels were reduced again to near as-deposited values following a subsequent steam anneal. For the greatest improvement in properties, a two-step anneal, first in argon and subsequently in steam, is recommended.}, number={4}, journal={JOURNAL OF THE ELECTROCHEMICAL SOCIETY}, author={Croswell, RT and Reisman, A and Simpson, DL and Temple, D and Williams, CK}, year={2000}, month={Apr}, pages={1513–1524} }
 @article{croswell_reisman_simpson_temple_williams_1999, title={Differential thermal analysis of glass mixtures containing SiO2, GeO2, B2O3, and P2O5}, volume={146}, ISSN={["0013-4651"]}, DOI={10.1149/1.1392676}, abstractNote={The glassy phases of SiO 2 , GeO 2 , B 2 O 3 , and P 2 O 5 as well as selected pseudo-binary, pseudo-ternary, and pseudo-quaternary compositions of these compounds have been examined for glass transitions by differential thermal analysis (DTA) in the context of reflow of doped germanosilicate glasses. SiO 2 does not exhibit a glass transition to temperatures above I 135°C. GeO 2 appears to exhibit a glass transition around 578°C, while B 2 O 3 appears to exhibit a glass transition in the range of 257-268°C. Although the glass transition temperature of P 2 O 5 could not be determined, the transition and melting behavior of the H, O, and O' phases have been reevaluated. Moreover, a new mechanism for conversion from H phase to O phase is presented. Namely, the melting of H H phase followed by the spontaneous recrystallization of the resulting liquid to form the O phase was observed by DTA. Germanosilicate mixtures exhibited no glass transition, but the germanoborates' glass transition temperatures increased linearly with increasing GeO 2 content. Examination of germanoborosilicates indicated that the addition of any germanosilicate composition to B 2 O 3 causes a linear increase in glass transition temperature with total germanosilicate mole fraction, independent of the GeO 2 /SiO 2 mole ratio. Pseudo-binary combinations of P 2 O 5 -B 2 O 3 showed no thermal anomalies on heating or cooling cycles following an initial thermal cycle. However, pseudo-binary combinations of P 2 O 5 -GeO exhibited exotherms on cooling following initial heating cycles, which may indicate the occurrence of crystallizations that might interfere with reflow phenomena Pseudo-quaternary combinations exhibited no thermal anomalies on heating or cooling.}, number={12}, journal={JOURNAL OF THE ELECTROCHEMICAL SOCIETY}, author={Croswell, RT and Reisman, A and Simpson, DL and Temple, D and Williams, CK}, year={1999}, month={Dec}, pages={4569–4579} }
 @article{simpson_croswell_reisman_temple_williams_1999, title={Planarization processes and applications - I. Undoped GeO2-SiO2 glasses}, volume={146}, ISSN={["0013-4651"]}, DOI={10.1149/1.1392565}, abstractNote={The reflow behavior of undoped glass films deposited by plasma enhanced chemical vapor deposition using germane, silane. and oxygen has been studied in several annealing ambient atmospheres. Such films offer the potential for both trench etchrefill and interlevel dielectric applications. Film synthesis was carried out at 200°C using a dual coil inductively coupled plasma system. Oxide film composition was determined using energy dispersive X‐ray spectroscopy and Auger energy spectroscopy. Cross‐sectional scanning electron microscopy has been employed to study the flow behavior of glass films of varying compositions over silicon trenches. Reflow was studied over the temperature range from 600 to 1050°C. The lowest temperature at which complete planarization was observed was 750 and 850°C in steam and inert gas ambient atmospheres, respectively, for films containing approximately 85 mol % . Surprisingly, it was discovered that the steam anneals caused a decrease in the Ge composition of as‐deposited germanosilicate glasses. This offers the potential for establishing a reflow hierarchy, which may have application in the planarization of interlevel dielectrics for ultralarge scale integrated circuits. © 1999 The Electrochemical Society. All rights reserved.}, number={10}, journal={JOURNAL OF THE ELECTROCHEMICAL SOCIETY}, author={Simpson, DL and Croswell, RT and Reisman, A and Temple, D and Williams, CK}, year={1999}, month={Oct}, pages={3860–3871} }
 @article{simpson_croswell_reisman_temple_williams_1999, title={Planarization processes and applications - II. B2O3/P2O5 doped GeO2-SiO2 classes}, volume={146}, ISSN={["0013-4651"]}, DOI={10.1149/1.1392566}, abstractNote={Plasma enhanced chemical vapor deposition of boron and phosphorus doped mixed GeO 2 -SiO 2 glass films in a horizontal tube reactor using germane (GeH 4 ), silane (SiH 4 ), diborane (B 2 H 6 ), phosphine (PH 3 ), and oxygen (O 2 ) has been studied. The glass films offer the potential for both trench refilling and interlevel dielectric applications. Film synthesis was carried out at 200°C using a dual coil inductively coupled plasma system. Oxide film composition was determined using energy dispersive X-ray spectroscopy and Auger energy spectroscopy. Cross-sectional scanning electron microscopy was employed for studing the compositional dependency of the reflow behavior of the mixed GeO 2 -SiO 2 , P 2 O 5 -GeO 2 -SiO 2 , B 2 O 3 -GeO 2 -SiO 2 , and P 2 O 5 -B 2 O 3 -GeO 2 -SiO 2 glass films over silicon trenches under various ambient atmospheres. Reflow experiments were performed at temperatures ranging from 550 to 800°C in various gas ambient atmospheres. As result of the work, a low temperature (∼600°C) reflow process was developed resulting in fully planar dielectric films. This process may have application for planarization of interlevel dielectrics for ultralarge scale integrated circuits.}, number={10}, journal={JOURNAL OF THE ELECTROCHEMICAL SOCIETY}, author={Simpson, DL and Croswell, RT and Reisman, A and Temple, D and Williams, CK}, year={1999}, month={Oct}, pages={3872–3885} }