@article{noveski_schlesser_raghothamachar_dudley_mahajan_beaudoin_sitar_2005, title={Seeded growth of bulk AlN crystals and grain evolution in polycrystalline AlN boules}, volume={279}, ISSN={0022-0248}, url={http://dx.doi.org/10.1016/j.jcrysgro.2004.12.027}, DOI={10.1016/j.jcrysgro.2004.12.027}, abstractNote={Large AlN crystals were grown by powder sublimation in a nitrogen atmosphere at low supersaturation and growth rates of 0.1–0.3 mm/h. The starting deposition surface was a sintered TaC disc. An appropriate adjustment of the system pressure and source-seed temperature gradient during the early stages of growth allowed epitaxial re-growth on AlN seeds that had been exposed to air. Single-crystalline AlN grains of 1 cm in size were achieved through multiple sublimation growth runs conducted at P=500Torr and growth temperatures of 2050–2150 °C. Elemental analysis of impurities in the grown AlN boules confirmed low oxygen contamination levels of ∼1019/cm3. No discontinuities were introduced in the structural defect distribution in the individual single-crystalline grains by the multiple re-growth steps. Absence of preferred growth directions of grains suggest the epitaxial re-growth process is suitable for seeded single-crystal growth in any orientation.}, number={1-2}, journal={Journal of Crystal Growth}, publisher={Elsevier BV}, author={Noveski, V. and Schlesser, R. and Raghothamachar, B. and Dudley, M. and Mahajan, S. and Beaudoin, S. and Sitar, Z.}, year={2005}, month={May}, pages={13–19} }
 @article{mahalingam_baliga_1999, title={The graded doped trench MOS Barrier Schottky rectifier: a low forward drop high voltage rectifier}, volume={43}, ISSN={["0038-1101"]}, DOI={10.1016/S0038-1101(98)00250-0}, abstractNote={Abstract A novel high voltage Schottky rectifier, called the Graded Doped Trench MOS Barrier Schottky (GD-TMBS) rectifier, is described in this paper. It is shown to have very low forward drop with excellent reverse blocking characteristics through device simulation and electrical characterization of fabricated devices. A linearly graded drift region doping profile is shown to result in an uniform electric field in the drift region resulting in the ability to support blocking voltages proportional to the trench depth. Two-dimensional device simulations have shown that breakdown voltages of upto 200 V can be achieved with a very low forward drop of 0.54 V. The measured on-state drop of fabricated 60 and 100 V GD-TMBS are about half those of conventional Schottky rectifiers. Power dissipation analysis indicates higher operating temperatures (150°C) with reduced heat sink sizes when compared to conventional Schottky barrier diodes.}, number={1}, journal={SOLID-STATE ELECTRONICS}, author={Mahalingam, S and Baliga, BJ}, year={1999}, month={Jan}, pages={1–9} }