@article{wolden_draper_sitar_prater_1999, title={The influences of reactant composition and substrate material on the combustion synthesis of diamond}, volume={14}, ISSN={["0884-2914"]}, DOI={10.1557/JMR.1999.0038}, abstractNote={It has been observed that diamond deposition by flat flame chemical vapor deposition is achieved over a very narrow range of reactant composition. We demonstrate that this diamond deposition window is strongly determined by the nature of the substrate material. Furthermore, once a continuous diamond film is formed, the window appears to be independent of the original material. Substrates examined include silicon, glass, titanium, tungsten, nickel, and molybdenum. The dependence of growth rate, morphology, and quality on reactant composition has been quantified using scanning electron microscopy, Raman spectroscopy, and secondary ion mass spectroscopy (SIMS). It was found that the highest quality diamond was grown at conditions where diamond does not nucleate on ultrasonically scratched silicon. Thus, the production of high quality diamond on silicon by combustion synthesis requires different conditions for nucleation and growth.}, number={1}, journal={JOURNAL OF MATERIALS RESEARCH}, author={Wolden, CA and Draper, CE and Sitar, Z and Prater, JT}, year={1999}, month={Jan}, pages={259–269} }
 @article{wolden_draper_sitar_prater_1998, title={The influence of nitrogen addition on the morphology, growth rate, and Raman spectra of combustion grown diamond}, volume={7}, ISSN={["0925-9635"]}, DOI={10.1016/S0925-9635(98)00172-1}, abstractNote={The influence of intentional nitrogen addition on diamond deposition using a low pressure acetylene–oxygen flat flame was studied. The film morphology was assessed by scanning electron microscopy, growth rates by cross-section thickness measurements, and nitrogen incorporation by Raman spectroscopy. It was found that the addition of nitrogen increased the growth parameter α, and for the conditions investigated 〈100〉 textured films were obtained for nitrogen levels between three and five parts per thousand (ppt). It was found that there was no change in growth rate over the range 0–7 ppt N2 addition. At higher levels the films became amorphous. For low levels (<5 ppt) the luminescence signal in the Raman spectra increased steadily with nitrogen addition, while the features associated with sp2 and sp3 bonded carbon were unchanged. Comparisons with natural diamond and hot-filament grown material demonstrate that nitrogen is a significant impurity in our acetylene source. Equilibrium calculations showed that NO and atomic nitrogen were the two dominant products that may be responsible for the observed changes in morphology and Raman spectra.}, number={8}, journal={DIAMOND AND RELATED MATERIALS}, author={Wolden, CA and Draper, CE and Sitar, Z and Prater, JT}, year={1998}, month={Aug}, pages={1178–1183} }