N. Yarykin

Impact of thermal annealing on deep-level defects in strained-Si/SiGe heterostructure

Journal of Applied Physics, 103(10).

Drift of interstitial iron in a space charge region of p-type Si Schottky diode

Physica. B, Condensed Matter, 274(1999 Dec.), 395–397.

Evolution of deep-level centers in p-type silicon following ion implantation at 85 K

Cho, C. R., Yarykin, N., Brown, R. A., Kononchuk, O., Rozgonyi, G. A., & Zuhr, R. A. (1999, March 1). Applied Physics Letters.

In-situ photoexcitation-induced perturbations of defect complex concentration and distribution in silicon implanted with light and heavy ions

Diffusion and Defect Data. [Pt. B], Solid State Phenomena, 70(1999), 397–402.

In-situ studies of point-defect complexes in silicon implanted with heavy MeV ions

Physica. B, Condensed Matter, 274(1999 Dec.), 485–488.

Silver-hydrogen interactions in crystalline silicon

Physical Review. B, Condensed Matter and Materials Physics, 59(8), 5551–5560.

The impact ofin situphotoexcitation on the formation of vacancy-type complexes in silicon implanted at 85 and 295 K

Yarykin, N., Cho, C. R., Rozgonyi, G. A., & Zuhr, R. A. (1999, July 12). Applied Physics Letters.

Diffusion of iron in the silicon dioxide layer of silicon-on-insulator structures

Kononchuk, O., Korablev, K. G., Yarykin, N., & Rozgonyi, G. A. (1998, August 31). Applied Physics Letters.