2008 journal article

Impact of thermal annealing on deep-level defects in strained-Si/SiGe heterostructure

Journal of Applied Physics, 103(10).

By: R. Zhang, G. Rozgonyi, E. Yakimov, N. Yarykin & M. Seacrist

Source: NC State University Libraries
Added: August 6, 2018

1999 journal article

Diffusion of iron in the silicon dioxide layer of silicon-on-insulator structures

Applied Physics Letters, 73(9), 1206–1208.

By: O. Kononchuk, K. Korablev, N. Yarykin & G. Rozgonyi

Source: NC State University Libraries
Added: August 6, 2018

1999 journal article

Drift of interstitial iron in a space charge region of p-type Si Schottky diode

Physica. B, Condensed Matter, 274(1999 Dec.), 395–397.

By: S. Koveshnikov, B. Choi, N. Yarykin & G. Rozgonyi

Source: NC State University Libraries
Added: August 6, 2018

1999 journal article

Evolution of deep-level centers in p-type silicon following ion implantation at 85 K

Applied Physics Letters, 74(9), 1263–1265.

By: C. Cho, N. Yarykin, R. Brown, O. Kononchuk, G. Rozgonyi & R. Zuhr

Source: NC State University Libraries
Added: August 6, 2018

1999 journal article

In-situ photoexcitation-induced perturbations of defect complex concentration and distribution in silicon implanted with light and heavy ions

Diffusion and Defect Data. [Pt. B], Solid State Phenomena, 70(1999), 397–402.

By: N. Yarykin, C. Cho, R. Zuhr & G. Rozgonyi

Source: NC State University Libraries
Added: August 6, 2018

1999 journal article

In-situ studies of point-defect complexes in silicon implanted with heavy MeV ions

Physica. B, Condensed Matter, 274(1999 Dec.), 485–488.

By: N. Yarykin, C. Cho, R. Zuhr & G. Rozgonyi

Source: NC State University Libraries
Added: August 6, 2018

1999 journal article

Silver-hydrogen interactions in crystalline silicon

Physical Review. B, Condensed Matter and Materials Physics, 59(8), 5551–5560.

By: N. Yarykin, J. Sachse, H. Lemke & J. Weber

Source: NC State University Libraries
Added: August 6, 2018

1999 journal article

The impact of in situ photoexcitation on the formation of vacancy-type complexes in silicon implanted at 85 and 295 K

Applied Physics Letters, 75(2), 241–243.

By: N. Yarykin, C. Cho, G. Rozgonyi & R. Zuhr

Source: NC State University Libraries
Added: August 6, 2018