@article{zhang_rozgonyi_yakimov_yarykin_seacrist_2008, title={Impact of thermal annealing on deep-level defects in strained-Si/SiGe heterostructure}, volume={103}, number={10}, journal={Journal of Applied Physics}, author={Zhang, R. H. and Rozgonyi, G. A. and Yakimov, E. and Yarykin, N. and Seacrist, M.}, year={2008} }
 @article{koveshnikov_choi_yarykin_rozgonyi_1999, title={Drift of interstitial iron in a space charge region of p-type Si Schottky diode}, volume={274}, number={1999 Dec.}, journal={Physica. B, Condensed Matter}, author={Koveshnikov, S. and Choi, B. and Yarykin, N. and Rozgonyi, G.}, year={1999}, pages={395–397} }
 @article{cho_yarykin_brown_kononchuk_rozgonyi_zuhr_1999, title={Evolution of deep-level centers in p-type silicon following ion implantation at 85 K}, volume={74}, ISSN={["0003-6951"]}, DOI={10.1063/1.123519}, abstractNote={In situ deep-level transient spectroscopy measurements have been carried out on p-type silicon following MeV He, Si, and Ge ion implantation at 85 K. Deep levels corresponding to intrinsic and impurity-related point defects are only detected after annealing at temperatures above 200 K. In addition to divacancies, interstitial carbon, and a carbon–oxygen complex, the formation of another defect, denoted as K2, has been observed during annealing at 200–230 K in epitaxial wafers, and at 200–300 K in Czochralski grown material. The energy level of the K2 defect is located 0.36 eV above the valence band, which is very close to a previously observed level of the carbon–oxygen pair. The relative concentration of this defect is ∼10 times higher in samples implanted with Ge than in those implanted with He. Due to its formation temperature, equal concentration in epitaxial and Czochralski grown wafers, and absence in n-type samples, the K2 trap has been tentatively identified as a vacancy-related complex which probably contains boron.}, number={9}, journal={APPLIED PHYSICS LETTERS}, author={Cho, CR and Yarykin, N and Brown, RA and Kononchuk, O and Rozgonyi, GA and Zuhr, RA}, year={1999}, month={Mar}, pages={1263–1265} }
 @article{yarykin_cho_zuhr_rozgonyi_1999, title={In-situ photoexcitation-induced perturbations of defect complex concentration and distribution in silicon implanted with light and heavy ions}, volume={70}, number={1999}, journal={Diffusion and Defect Data. [Pt. B], Solid State Phenomena}, author={Yarykin, N. and Cho, C. R. and Zuhr, R. A. and Rozgonyi, G. A.}, year={1999}, pages={397–402} }
 @article{yarykin_cho_zuhr_rozgonyi_1999, title={In-situ studies of point-defect complexes in silicon implanted with heavy MeV ions}, volume={274}, number={1999 Dec.}, journal={Physica. B, Condensed Matter}, author={Yarykin, N. and Cho, C. R. and Zuhr, R. and Rozgonyi, G.}, year={1999}, pages={485–488} }
 @article{yarykin_sachse_lemke_weber_1999, title={Silver-hydrogen interactions in crystalline silicon}, volume={59}, number={8}, journal={Physical Review. B, Condensed Matter and Materials Physics}, author={Yarykin, N. and Sachse, J. U. and Lemke, H. and Weber, J.}, year={1999}, pages={5551–5560} }
 @article{yarykin_cho_rozgonyi_zuhr_1999, title={The impact of in situ photoexcitation on the formation of vacancy-type complexes in silicon implanted at 85 and 295 K}, volume={75}, ISSN={["1077-3118"]}, DOI={10.1063/1.124335}, abstractNote={Photoexcitation of silicon during low-fluence implantation with MeV Si and Ge ions is observed to suppress vacancy-type point-defect formation, as determined by in situ deep-level transient spectroscopy. The A-center formation after low-temperature implantation is extended over a wide temperature interval indicating that electrically inactive clusters, which emit vacancies during annealing, are formed in the end-of-range region during implantation at 85 K. The number of vacancies stored in these clusters is influenced by low-temperature in situ photoexcitation.}, number={2}, journal={APPLIED PHYSICS LETTERS}, author={Yarykin, N and Cho, CR and Rozgonyi, GA and Zuhr, RA}, year={1999}, month={Jul}, pages={241–243} }
 @article{kononchuk_korablev_yarykin_rozgonyi_1998, title={Diffusion of iron in the silicon dioxide layer of silicon-on-insulator structures}, volume={73}, ISSN={["0003-6951"]}, DOI={10.1063/1.122128}, abstractNote={The redistribution of iron implanted into the oxide layer of silicon-on-insulator structures has been measured using the secondary ion mass spectroscopy technique after annealing at 900–1050 °C. Iron diffusion has been found to be much faster in the oxide prepared by the separation-byimplantation-of-oxygen (SIMOX) procedure compared to the thermally grown oxide in the bonded and etched-back structures. In the latter case, the Fe diffusivity exhibits a thermal activation with an energy of 2.8 eV, confirming the literature data on silica glass. In the SIMOX oxide, the diffusivity depends only weakly on temperature, indicative of an essentially activation-free diffusion mechanism. Gettering of Fe at below-the-buried-oxide defects in SIMOX wafers has been observed. No iron segregation has been detected at the SiO2–Si interfaces.}, number={9}, journal={APPLIED PHYSICS LETTERS}, author={Kononchuk, O and Korablev, KG and Yarykin, N and Rozgonyi, GA}, year={1998}, month={Aug}, pages={1206–1208} }