Works (7)

Updated: July 5th, 2023 16:02

2007 patent

Methods of fabricating gallium nitride semiconductor layers by lateral growth into trenches

Washington, DC: U.S. Patent and Trademark Office.

Source: NC State University Libraries
Added: August 6, 2018

2005 patent

Second gallium nitride layers that extend into trenches in first gallium nitride layers

Washington, DC: U.S. Patent and Trademark Office.

Source: NC State University Libraries
Added: August 6, 2018

2001 patent

Methods of fabricating gallium nitride semiconductor layers by lateral growth from sidewalls into trenches, and gallium nitride semiconductor structures fabricated thereby

Washington, DC: U.S. Patent and Trademark Office.

Source: NC State University Libraries
Added: August 6, 2018

2000 article

Selective etching of GaN over AlN using an inductively coupled plasma and an O2/Cl2/Ar chemistry

Smith, S. A., Lampert, W. V., Rajagopal, P., Banks, A. D., Thomson, D., & Davis, R. F. (2000, May 1). Journal of Vacuum Science & Technology A Vacuum Surfaces and Films.

By: S. Smith*, W. Lampert*, P. Rajagopal n, A. Banks n, D. Thomson n & R. Davis n

topics (OpenAlex): GaN-based semiconductor devices and materials; Semiconductor materials and devices; Plasma Diagnostics and Applications
Source: Web Of Science
Added: August 6, 2018

1999 personal communication

Pendeo-epitaxy: A new approach for lateral growth of gallium nitride films

Source: NC State University Libraries
Added: August 6, 2018

1999 journal article

Pendeo-epitaxy: A new approach for lateral growth of gallium nitride structures

MRS Internet Journal of Nitride Semiconductor Research, 4S1(G3.38).

Source: NC State University Libraries
Added: August 6, 2018

1999 article

Turbellarian infection of carangids.

Noga, E. J. (1999, December 1). Journal of Fish Diseases.

By: E. Noga*

topics (OpenAlex): Parasite Biology and Host Interactions; Law, AI, and Intellectual Property
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Source: Web Of Science
Added: August 6, 2018

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