Works (7)
2007 patent
Methods of fabricating gallium nitride semiconductor layers by lateral growth into trenches
Washington, DC: U.S. Patent and Trademark Office.
2005 patent
Second gallium nitride layers that extend into trenches in first gallium nitride layers
Washington, DC: U.S. Patent and Trademark Office.
2001 patent
Methods of fabricating gallium nitride semiconductor layers by lateral growth from sidewalls into trenches, and gallium nitride semiconductor structures fabricated thereby
Washington, DC: U.S. Patent and Trademark Office.
2000 article
Selective etching of GaN over AlN using an inductively coupled plasma and an O2/Cl2/Ar chemistry
Smith, S. A., Lampert, W. V., Rajagopal, P., Banks, A. D., Thomson, D., & Davis, R. F. (2000, May 1). Journal of Vacuum Science & Technology A Vacuum Surfaces and Films.
1999 personal communication
Pendeo-epitaxy: A new approach for lateral growth of gallium nitride films
1999 journal article
Pendeo-epitaxy: A new approach for lateral growth of gallium nitride structures
MRS Internet Journal of Nitride Semiconductor Research, 4S1(G3.38).
1999 article
Turbellarian infection of carangids.
Noga, E. J. (1999, December 1). Journal of Fish Diseases.