2007 patent
Methods of fabricating gallium nitride semiconductor layers by lateral growth into trenches
Washington, DC: U.S. Patent and Trademark Office.
2005 patent
Second gallium nitride layers that extend into trenches in first gallium nitride layers
Washington, DC: U.S. Patent and Trademark Office.
2001 patent
Methods of fabricating gallium nitride semiconductor layers by lateral growth from sidewalls into trenches, and gallium nitride semiconductor structures fabricated thereby
Washington, DC: U.S. Patent and Trademark Office.
2000 journal article
Selective etching of GaN over AlN using an inductively coupled plasma and an O-2/Cl-2/Ar chemistry
JOURNAL OF VACUUM SCIENCE & TECHNOLOGY A, 18(3), 879–881.
1999 personal communication
Pendeo-epitaxy: A new approach for lateral growth of gallium nitride films
1999 journal article
Pendeo-epitaxy: A new approach for lateral growth of gallium nitride structures
MRS Internet Journal of Nitride Semiconductor Research, 4S1(G3.38).
1999 journal article
Turbellarian infection of carangids.
JOURNAL OF FISH DISEASES, 22(6), 489–491.
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