Scott A. Smith

Zheleva, T., Thomson, D. B., Smith, S. A., Linthicum, K. J., Gehrke, T., & Davis, R. F. (2007). Methods of fabricating gallium nitride semiconductor layers by lateral growth into trenches. Washington, DC: U.S. Patent and Trademark Office.

Zheleva, T., Thomson, D. B., Smith, S. A., Linthicum, K. J., Gehrke, T., & Davis, R. F. (2005). Second gallium nitride layers that extend into trenches in first gallium nitride layers. Washington, DC: U.S. Patent and Trademark Office.

Zheleva, T., Thomson, D. B., Smith, S. A., Linthicum, K. J., Gehrke, T., & Davis, R. F. (2001). Methods of fabricating gallium nitride semiconductor layers by lateral growth from sidewalls into trenches, and gallium nitride semiconductor structures fabricated thereby. Washington, DC: U.S. Patent and Trademark Office.

Smith, S. A., Lampert, W. V., Rajagopal, P., Banks, A. D., Thomson, D., & Davis, R. F. (2000). Selective etching of GaN over AlN using an inductively coupled plasma and an O-2/Cl-2/Ar chemistry. JOURNAL OF VACUUM SCIENCE & TECHNOLOGY A, 18(3), 879–881. https://doi.org/10.1116/1.582270

Zheleva, T. S., Smith, S. A., Thomson, D. B., Linthicum, K. J., Rajagopal, P., & Davis, R. F. (1999). Pendeo-epitaxy: A new approach for lateral growth of gallium nitride films.

Zheleva, T. S., Smith, S. A., Thomson, D. B., Gehrke, T., Linthicum, K. J., Rajagopal, P., … Davis, R. F. (1999). Pendeo-epitaxy: A new approach for lateral growth of gallium nitride structures. MRS Internet Journal of Nitride Semiconductor Research, 4S1(G3.38).

Noga, E. J., Smith, J., & Smith, S. A. (1999). Turbellarian infection of carangids. JOURNAL OF FISH DISEASES, 22(6), 489–491. https://doi.org/10.1046/j.1365-2761.1999.00187.x